46*. High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects Gengchiau Liang, S. Bala Kumar, M. B. A. Jalil, and S. G. Tan Appl. Phys. Lett. 99, 083107 (2011)
45*. Design evaluation of graphene nanoribbon nanoelectromechanical devices Kai-Tak Lam, Marie Stephen Leo, Chengkuo Lee and Gengchiau Liang J. Appl. Phys. 110, 024302 (2011)
44*. Theoretical study on thermoelectric properties of kinked graphene nanoribbons Wen Huang, Jian-Sheng Wang, and Gengchiau Liang Phys. Rev. B 84, 045410 (2011)
43*. Enhanced Faraday rotation in magnetophotonic crystal infiltrated with graphene Haixia Da and Gengchiau Liang Appl. Phys. Lett. 98, 261915 (2011)
42*. Conductance modulation in graphene nanoribbon under transversal asymmetric electric potential Electric field modulated electronic transport in hollowed graphene nanoribbons S. Bala Kumar, F. Fujita, and Gengchiau Liang J. Appl. Phys., 109, 073704 (2011)
41*. Electrostatics of Ultimately-Thin Body Tunneling FET using Graphene Nanoribbon Kai-Tak Lam, Yue Yang, G. S. Samudra, Yee-Chia Yeo and Gengchiau Liang IEEE Electron Device Letter. 32, no.4, 431 - 433 (2011)
40*. Graphene-based Spin Caloritronics Minggang Zeng, Yuan Ping Feng, and Gengchiau Liang Nano Lett.11(3),1369–1373 (2011)
39*. Stability and electronic structure of two dimensional Cx(BN)y compound Kai-Tak Lam, Yunhao Lu, Yuan Ping Feng, and Gengchiau Liang Appl. Phys. Lett. 98, 022101 (2011)

38. Ambipolar bistable switching effect of graphene Young Jun Shin, Jae Hyun Kwon, Gopinadhan Kalon, Kai-Tak Lam, Charanjit Singh Bhatia, Gengchiau Liang, and Hyunsoo Yang Appl. Phys. Lett, 97, 262105, (2010)
37. Tunneling characteristics of graphene Young Jun Shin, Gopinadhan Kalon, Jaesung Son, Jae Hyun Kwon, Jing Niu, Charanjit Singh Bhatia, Gengchiau Liang, and Hyunsoo Yang Appl. Phys. Lett. 97, 252102, (2010)
36*. Device Physics and Characteristics of Ballistic Graphene Nanoribbon Tunneling FETs S.-K. Chin, D. W. Seah, K.-T. Lam, G. S. Samudra, and G. C. Liang IEEE Trans. on Electron Device 57, 3144-3152 (2010)
35*. Theoretical study on thermoelectric properties of Ge nanowires based on electronic band structures W. Huang, S. K. Chee, and G. C. Liang IEEE Electron Device Lett. 31, 1026-1028 (2010)
34*. The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons S. B. Kuma, M. B. A. Jalil, S. G. Tan, and G. C. Liang J. Phys.: Condens. Matter 22, 375303 (2010)
33*. Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation S. B. Kuma, S. G. Tan, M. B. A. Jalil, and G. C. Liang J. Appl. Phys. 108, 033709 (2010)
32*. A Simulation Study of Graphene Nanoribbon Tunneling FET with Heterojunction Channel K.-T. Lam, D. W. Seah, S.-K. Chin, S. B. Kumar, G. Samudra, Y.-C. Yeo, and G. C. Liang IEEE Electron Device Lett. 31, 555-557 (2010)
31*. Influence of edge roughness on graphene nanoribbon resonant tunneling diodes G. C. Liang, S. B. Khalid, and K.-T. Lam J. Phys. D: Appl. Phys. 43, 215101 (2010)
30*. Shape Effects on the Performance of Si and Ge Nanowire FETs based on Size Dependent Bandstructure S. K. Chee , G. Samudra, and G. C. Liang Jpn. J. Appl. Phys. 49, 04DN07 (2010)
29*. Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors K.-T. Lam, S.-K. Chin, D. W. Seah, S. B. Kumar, and G. C. Liang Jpn. J. Appl. Phys. 49, 04DJ10 (2010)
28*. Geometry effects on thermoelectric properties of silicon nanowires based on electronic band structures G. C.Liang, W. Huang, S. K. Chee, J.-S. Wang, and J. H. Lan J. Appl. Phys. 107, 014317 (2010).

27. Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons X. X. Ni, G. C. Liang, J.-S. Wang, and B. W. Li Appl. Phys. Lett. 95, 192114 (2009)
26*. Bilayer Graphene Nanoribbon Nanoelectromechanical System Devices: a Computational Study K.-T. Lam, C. K. Lee and G. C. Liang Appl. Phys. Lett. 95, 143107 (2009)
25. High and Tunable Spin Current Induced by Magnetic-Electric Fields in a Single-Mode Spintronic Device S. B. Kumar, S. G. Tan, M. B. A. Jalil, and G. C. Liang Nanotechnology 20, 365204 (2009)
24*. Shape effects in graphene nanoribbon resonant tunneling diodes: A computational study H. Teong, K.-T. Lam, S. B. Khalid, and G. C. Liang J. Appl. Phys. 105, 084317 (2009)
23*. A computational study on the device performance of graphene nanoribbon resonant tunneling diodes H. Teong, K.-T. Lam, and G. C. Liang Jpn. J. Appl. Phys. 48, 04C156 (2009)

22. Temperature Dependence of Carrier Transport of a Silicon Nanowire Schottky-Barrier Field-Effect Transistor W. F. Yang, S. J. Lee, G. C. Liang, R. Eswar, Z. Q. Sun, and D. L. Kwong IEEE Trans. on Nanotechnology 7, 728-732 (2008)
21. Improved Carrier Injection in Gate-All-Around Schottky Barrier Silicon Nanowire Field Effect J. W. Peng, S. J. Lee, G. C. Liang, N. Singh, S. Y. Zhu, C. M. Ng, G. Q. Lo, N. Balasubramanian, and D. L. Kwong Appl. Phys. Lett. 93, 073503 (2008)
20*. Contact Effects in Graphene Nanoribbon Transistors G. C. Liang, N. Neophytos, M. Lundstrom, and D. Nikonov Nano Lett. 8(7), 1819-1824 (2008)
19*. An Ab Initio Study on Energy Gap of Bilayer Graphene Nanoribbons with Armchair Edges K.-T. Lam and G. C. Liang Appl. Phys. Lett. 92, 223106 (2008)
18. Electrical Transport of Bottom-Up Grown Single-Crystal Si1-xGex Nanowire W. F. Yang, S. J. Lee, G. C. Liang, S. J. Whang, and D. L. Kwong Nanotechnology 19, 225203 (2008)
17. A pseudopotential method for investigating the surface roughness effect in ultrathin body transistors Z.-G. Zhu, G. C. Liang, and G. S. Samudra J. Phys.: Cond. Matt. 20, 235229 (2008)
16*. Computational study of double-gate graphene nano-ribbon transistors G. C. Liang, N. Neophytos, M. Lundstrom, and D. Nikonov J. Comput. Electron. 7, 394-397 (2008)
15. Spin tunneling in multilayer spintronic devices S. G. Tan, M. B. A. Jalil, S. B. Kumar, and G. C. Liang Phys. Rev. B 77, 085424 (2008)
14. Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed Y. J. Hu, J. Xiang, G. C. Liang, H. Yan,and C. M. Lieber Nano Lett. 8(3), 925-930 (2008)

13*. Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation G. C. Liang, N. Neophytos, M. Lundstrom, and D. Nikonov J. Appl. Phys. 102, 054307 (2007)
12*. Performance projections for ballistic graphene nanoribbon field-effect transistors G. C. Liang, N. Neophytos, D. Nikonov, and M. Lundstrom IEEE Trans. on Electron Devices 54, 677-682 (2007)
11*. Impact of structure relaxation on the ultimate performance of a small diameter, n-type <110> Si-Nanowire MOSFET G. C. Liang, D. Kienle, S. K. R. Patil, J. Wang, A. W. Ghosh, and S. V. Khare IEEE Trans. Nanotechnology 6, 225-229 (2007)
10*. Performance Analysis of a Ge/Si Core/Shell Nanowire Field Effect Transistor G. C. Liang, J. Xiang, N. Kharche, G. Klimeck, C. M. Lieber, and M. Lundstrom Nano Lett. 7(3), 642-646 (2007)

9. Extended Hückel theory for band structure, chemistry, and transport. II. Silicon D. Kienle, K. H. Bevan, G. C. Liang, L. Siddiqui, J. I. Cerda, and A. W. Ghosh J. Appl. Phys. 100, 043715 (2006)
8. Molecules on Silicon: Self-Consistent First-Principles Theory and Calibration to Experiments T. Rakshit, G. C. Liang, A. W. Ghosh, and S. Datta Phys. Rev. B 72, 125305 (2005)
7. Identifying contact effects in electronic conduction through C60 on Silicon G. C. Liang, and A. W.Ghosh Phys. Rev. Lett. 95, 076403 (2005)
6. Modeling Challenges in Molecular Electronics on Silicon T. Rakshit, G. C. Liang, A. W. Ghosh, and S. Datta J. Comput. Electron. 4, 83-86 (2005)
5. Silicon-based molecular electronics T. Rakshit, G. C. Liang, A. W. Ghosh, and S. Datta Nano Lett. 4(10), 1803-1807 (2004)
4. Electrostatic potential profiles of molecular conductors G. C. Liang, A. W. Ghosh, M. Paulsson, and S. Datta Phys. Rev. B 69, 115302 (2004)
3. Photoacoustic measurement of methane concentrations with a compact pulsed optical parametric oscillator A. Miklos, C. H. Lim, W. W. Hsiang, G. C. Liang, A. H. Kung, A. Schmohl, and P. Hess Appl. Optics 41, 2985-2993 (2002)
2. Photoacoustic Trace Detection of Methane Using Compact Solid-State Lasers G. C. Liang, H.-H. Liu, A. H. Kung, A. Mohacsi, A. Miklos, and P. Hess J. Phys. Chem. A 104, 10179 (2000)
1. Multi-band Quantum Transmitting Boundary Method for Non-orthogonal Basis G. C. Liang, Y. A. Lin, D. Z.Y. Ting, and Y. -C. Chang VLSI Design 8, 507-513 (1998)

 

56. Gengchiau Liang, BIT' s 1st Annual World Congress of Nano-S&T, A dedicated Nanoscience and Nanotechnology Professionals, Oct.23-26, 2011 in Dalian, China.(Invited talk)

55. Gengchiau Liang, ICCE-19 19th INTERNATIONAL CONFERENCE ON COMPOSITES or NANO ENGINEERING July 24-30, 2011, Shanghai, China.(Invited talk)

54. H. Da, K.-T. Lam, G. S. Samudra, S. K. Chin, and Gengchiau Liang, “Source/Drain Doping Influence on Heterojunction Graphene Nanoribbon Tunneling Field Effect Transistors,” the 4th 2011 IEEE International NanoElectronics Conference (INEC) in Chang Gung University, Kweishan, Taoyuan, Taiwan, June 21-24, 2011.

53. Gengchiau Liang, K.-T. Lam, S. K. Chin, and D.W. Seah, “Quantum Transport Simulations of Graphene Based Devices Using Dirac Hamiltonian calibrated with π-orbital Tight Binding Approach,” the 4th 2011 IEEE International NanoElectronics Conference (INEC) in Chang Gung University, Kweishan, Taoyuan, Taiwan, June 21-24, 2011.

52. K.-T. Lam, Yan-Zheng Peck, Zhi-Hean Lim, and Gengchiau Liang, “Performance Comparison of Armchair-Edged and Nitrogen-Doped Zigzag-Edged Graphene Nanoribbon Schottky Barrier Field-Effect Transistors,” the 4th 2011 IEEE International NanoElectronics Conference (INEC) in Chang Gung University, Kweishan, Taoyuan, Taiwan, June 21-24, 2011.

51. Gengchiau Liang, "Graphene-based Nano-devices nano-devices—Future of Nanoelectronic Device," Fudan University, Shanghai, China, Nov. 8, 2010. (Invited talk)

50. Gengchiau Liang, "Fundamentals of Graphene Nanoribbons and their Possible Electronic Device Applications," Zhejing University, HangZhou, China, Nov. 5, 2010. (Invited talk)

49. Gengchiau Liang, S.-K. Chin, D. W. Seah, Kai-Tak Lam, and Ganesh S. Samudra, "Doping and Temperature Effects on Graphene Nanoribbon Tunneling Field-Effect-Transistors," International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010), InterContinental, Pudong, Shanghai, China, Nov. 1-4, 2010.

48. Wen Huang, Chee Shin Koong, and Gengchiau Liang, "Theoretical Study on Geometry and Temperature Effects of Thermoelectric Properties of Si and Ge Nanowires," International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010), InterContinental, Pudong, Shanghai, China, Nov. 1-4, 2010.

47. Kai-Tak Lam, Marie Stephen Leo, Chengkuo Lee, and Gengchiau Liang, "Comparison of bilayer GNR NEMS devices based on attractive and repulsive force actuators," 14th International Workshop on Computational Electronics (IWCE 2010) Pisa, Italy, Oct. 27-29, 2010.

46. Haixia Da, Kai-Tak Lam, S. -K. Chin, Ganesh S. Samudra, Yee-Chia Yeo, and Gengchiau Liang, "Performance evaluation of graphene nanoribbon heterojunction tunneling field effect transistors with various source/drain doping concentration and heterojunction structure," 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sep. 22-24, 2010.

45. S. Bala Kumar, T. Fujita, and Gengchiau Liang, "Graphene based transversal-gated field effect transistor due to band gap modulation," 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sep. 22-24, 2010.

44. Wen Huang, and Gengchiau Liang, "Size and Chirality Dependence on Thermoelectric Properties of Graphene Nanoribbons," 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sep. 22-24, 2010.

43. Wen Huang, Chee Shin Koong, and Gengchiau Liang, " Theoretical Study on Thermoelectric Properties of Si and Ge Nanowires,” IEEE 10th Nanotechnology conference, (IEEE NANO 2010), Aug. 17-20, 2010, Seoul, Korea.

42. Kai-Tak Lam, Dawei Seah, S. K. Chin, S. Bala Kumar, G. Samudra, Yee-Chia Yeo, and Gengchiau Liang, "A Computational Study on the Device Performance of Graphene Nanoribbon Heterojunction Tunneling FETs," Device Research Conference 2010, University of Notre Dame, South Bend, IN, USA, June 21-23, 2010.

41. S. Bala Kumar, Gengchiau Liang, S. G. Tan, and M. B. A. Jalil, "High magnetoresistive effect in armchair graphene nanoribbon utilizing n=0 Landau Level," THE 11TH JOINT MMM-INTERMAG CONFERENCE, Washington, DC, Jan. 18-22, 2010.

40. Kai-Tak Lam and Gengchiau Liang, "A Computational Evaluation of the Designs of a Novel Nanoelectromechanical Switch Based on Bilayer Graphene Nanoribbon" 2009 IEEE International Electron Devices Meeting (IEDM), Hilton Baltimore, Baltimore, MD, Dec. 7-9, 2009.

39. Chee Shin Koong, Ganesh Samudra, and Gengchiau Liang, "Shape Effects on the Performance of Si and Ge Nanowire FETs Based on Size Dependent Bandstructure," 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, Oct. 7-9, 2009.

38. Sharjeel Bin Khalid, Kai-Tak Lam and Gengchiau Liang, "Computational Study of Edge Roughness Effect on the Device Performance of Graphene Nanoribbon Resonant Tunneling Diodes," 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, Oct. 7-9, 2009.

37. Wen Huang, Chee Shin Koong, and Gengchiau Liang, "Theoretical Study on Thermoelectric Properties of Ge and Si Nanowires," 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, Oct. 7-9, 2009.

36. Kai-Tak Lam, S. Bala Kumar, Sai Kong Chin, Da Wei Seah and Gengchiau Liang, Performance Evaluation of Graphene Nanoribbon Tunneling Field Effect Transistors," 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, Oct. 7-9, 2009.

35. Kai-Tak Lam, Yan-Zheng Peck, Chengkuo Lee and Gengchiau Liang, "Graphene Nanoribbon Schottky-Barrier Field Effect Transistor and its Application as a Nanoelectromechanical Device," IEEE 9th Nanotechnology conference(IEEE NANO 2009), Genoa, Italy, July 26-30, 2009.

34. Kai-Tak Lam, Chengkuo Lee and Gengchiau Liang, "Computational Study of Nanoelectromechanical Device Using Bilayer Graphene Nanoribbon," International Conference on Materials for Advanced Technologies (ICMAT 2009), Singapore, June 28-July 3, 2009.

33. Zuan-Yi Leong, Kaitak Lam, and Gengchiau Liang, "Device Performance of Graphene Nanoribbon Field Effect Transistors with Edge Roughness Effects: A Computational Study," 13th International Workshop on Computational Electronics (IWCE 2009),Bejing, China, May 27-29, 2009

32. Gengchiau Liang, Hansen Teong, and Kai-Tak Lam, "Computational study of Graphene Nanoribbon Resonant Tunneling," 13th International Workshop on Computational Electronics (IWCE 2009), Bejing, China, May 27-29, 2009

31. Kai-Tak Lam and Gengchiau Liang, "Computational Study on the Performance of Monolayer and Bilayer Graphene Nanoribbon devices," 13th International Workshop on Computational Electronics (IWCE 2009), Bejing, China, May 27-29, 2009.

30. Gengchiau Liang, Hansen Teong and Kaitak Lam, "Possible Electronic Device Applications of Graphene Nanoribbons," The 2008 Asian Conference on Nanoscience and Nanotechnology (AsiaNANO 2008), Singapore, Nov. 3-7, 2008.

29. Kaitak Lam and Gengchiau Liang, "A First Principle Study of Bilayer Graphene Nanoribbon Devices," The 2008 Asian Conference on Nanoscience and Nanotechnology (AsiaNANO 2008), Singapore, Nov. 3-7, 2008.

28. J. W. Peng, S. J. Lee, Gengchiau Liang, N. Singh, C. M. Ng, G. Q. Lo and D. L. Kwong, "Gate-All-Around 4-nm Silicon Nanowire Schottky Barrier MOSFET with 1-D NiSi Source/Drain," 2008 International Conference on Solid-State Devices and Materials (SSDM 2008), Ibaraki, Japan, Sep. 23-26, 2008.

27. Chee Shin Koong, Ganesh Samudra, Gengchiau Liang, "Investigate the Effects of Channel Materials & Channel Orientations on the Performance of Nanowire FETs," 2008 International Conference on Solid-State Devices and Materials (SSDM 2008), Ibaraki, Japan, Sep. 23-26, 2008.

26. Gengchiau Liang, Hansen Teong, Kaitak Lam, Neophytos Neophytou, and Dmitri E. Nikonov, "Graphene Nanoribbon Transistors and Resonant Tunneling Diodes" 2008 International Conference on Solid-State Devices and Materials (SSDM 2008), Ibaraki, Japan, Sep. 23-26, 2008

25. Kai-Tak Lam and Gengchiau Liang, "An ab initio investigation of energy bandgap of monolayer and bilayer graphene nanoribbon based on different basis sets,” The 8th International Conference on Nanotechnology (IEEE NANO 2008), Arlington, TX, USA, Aug. 18-21, 2008.

24. Gengchiau Liang, "Graphene related nano-devices," National Taiwan Normal Univeristy, Taipei Taiwan, , June 2008.(Invited talk)

23. Gengchiau. Liang, "Theoretical Study of Graphene Nanoribbon (GNR) FETs," 2nd International Conference on New Diamond and Nano Carbons (NDNC2008), Taipei, Taiwan, May 2008.

22. Kai-Tak Lam and Gengchiau Liang, "Electronic Properties of Edge-doped Armchair Graphene Nanoribbon: an ab initio Approach," MRS 2008 spring meeting, Moscone West and San Francisco Marriott, US, Mar. 24-28, 2008.

21. Gengchiau Liang, "Width Effects in Ballistic Graphene Nanoribbon FETs," IEEE International Nanoelectronics Conference 2008, Shanghai, China, Mar. 24-27, 2008.

20. Kai-Tak Lam and Gengchiau Liang, "A first-principals study on edge doping of armchair graphene nanoribbon," International IEEE International Nanoelectronics Conference 2008, Shanghai, China, Mar. 24-27, 2008.

19. Gengchiau Liang, "Graphene related nano-devices," Institute of Atomic and Molecular Science, Academia Sinica, Taipei Taiwan, Dec. 2007. (Invited talk).

18. Gengchiau Liang, "Graphene Nano-Ribbon (GNR) devices," National Taiwan University of Science and Technology, Taipei Taiwan, Dec. 2007.(Invited talk).

17. Gengchiau Liang, "Structure effect of all-gate-around Si Nanowire MOSFETs," 2007 IEEE Conference on Electron Devices and Solid-State Circuits, Taiwan, Dec. 2007.

16. Gengchiau Liang, N. Neophytos, M. Lundstrom, and D. Nikonov, "Simualtion study of the Double-Gate Graphene Nanoribbon MOSFETs," 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, Oct. 2007.

15. Gengchiau Liang, "Geometry effect of Si Nanowire MOSFETs," 2007 Silicon Nanoelectronics Workshop, Kyoto Japan 2007.

14. Gengchiau Liang, N. Neophytos, M. Lundstrom and D. Nikonov, “Contact effects on Graphene Nanoribbon Field-Effect Transistors,” The 7th International Conference on Nanotechnology (IEEE NANO 2007), Hong Kong, China, 2007.

13. Gengchiau Liang, N. Neophytos, D. Nikonov, and M. Lundstrom “Theoretical study of Graphene Nanoribbon Field-Effect Transistors ,” Nano tech 2007, Santa Clara, California, USA, 2007.

12. A. W. Ghosh, B. Muralidharan, Gengchiau Liang, S. Datta, "Towards a Theory of Single Molecule Conduction," IEEE NANO 2006, Cincinnati USA 2006.

11. Gengchiau Liang, D. Kienle, S. Patil, S. Khare, A. W. Ghosh, and J. Wang, “Impact of Structure Relaxation on Performance of Silicon Nanowire FETs”, 2006 IEEE SILICON NANOELECTRONICS WORKSHOP, Hawaii USA, 2006

10. Gengchiau Liang, "Towards Nanoscale Devices Fundamental Physics & Device Applications," National University of Sigapore, Signapore, 2006. (Invited Talk)

9. Gengchiau Liang, "Electron transport through Si (100) surface and Si Nanowires," Institute of High Performance Computing (IHPC), Signapore, 2006. (Invited talk)

8. Gengchiau Liang, "Towards Nanoscale Devices Fundamental Physics & Device Applications," Research Center for Applied Sciences, Academic Sinica, Taipei, 2006. (Invited Talk)

7. Gengchiau Liang, "Molecular Electronic Devices: Physics & Applications," National Tsing Hua University, Hsinchu Taiwan, 2005. (Invited Talk)

6. Gengchiau Liang, "Molecular Electronic Devices: its applications and future," National Chiao Tung University, Hsinchu Taiwan, 2005. (Invited Talk)

5. Gengchiau Liang, A. Ghosh, T. Rakshit and S. Datta, "Hybrid-basis modeling of electron transport through molecules on Silicon," IEEE, International Workshop on Computational Electronics 10, West Lafayette, US., Aug 2004.

4. A.W. Ghosh, Gengchiau Liang, T. Rakshit, D. Kienle, and S. Datta, “Molecular Elements on Silicon Substrates: Modeling Issues and Device Prospect," The 4th IEEE Conference on Nanotechnology (IEEE NANO 2004), Munich, Germany, Aug. 2004.

3. Gengchiau Liang, A. Ghosh, T. Rakshit and S. Datta, "Quantum Simulation of Current through Molecules on Silicon," Workshop on Molecular Conduction, Northwestern University, IL, US., June 2004.

2. Gengchiau Liang, A. Ghosh, T. Rakshit and S. Datta, "Hybrid-Basis Modeling of Transport Through Silicon-Based Molecular Devices," 46th Annual Electronic Material Conference, Notre Dame, May 2004.

1. Gengchiau Liang, A. Ghosh, M. Paulsson, and S. Datta, "Hybrid-basis modeling of transport through molecule-semiconductor interfaces." Trends in Nanotechnology (TNT), Salamanca, Spain, Sep. 2003.