In the world of information explosion, everybody is looking for a way to decrease the physical volume of data. Among all the efforts in this area, ReRAM is one of the non-volatile memories which seem promising to make terabyte memories. The basic idea of ReRAM is that the resistivity of a dielectric insulator can be changed by application of a sufficiently high voltage, and it is possible to set and reset the memory between two different resistivity states by applying an appropriate voltage. The picture below shows a beautiful C-AFM image of two distinct resistivity states in STO which is switched between two resistivity states by applying ± 6 V1. Among all the tree branch of the memories based on resistance changes, including (i) phase-change memory in chalcogenides, (ii) programmable- metallization-cell memory in solid electrolytes, and (iii) resistance-change memory in transition-metal oxides, the last group which is also called resistive switching in literatures, is more of our group’s interest. The mechanism of this phenomenon is not well known and there is still a lot of controversy over the subject, but this memory seems promising since “the transition- metal oxide concept offers compelling advantages in terms of compatibility with microprocessor fabrication technology” 2.
1Szot, K., et al., Nanoscale resistive switching in SrTiO3 thin films. Physica Status Solidi - Rapid Research Letetrs, 2007. 1(2): p. R86-R88.
2Meijer, G.I., Materials science: Who wins the nonvolatile memory race? Science, 2008. 319(5870): p. 1625-1626.