Doping effects on structural and magnetic properties of Heusler alloys Fe2Cr1-xCoxSi,
Y. F. Liu, L. Z. Ren, Y. H. Zheng, S. K. He, Y. Liu, P. Yang, H. Yang and K. L. Teo,
AIP ADVANCES, Vol. 8, Article Number: 056328 (2018).
Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques,
Y. Wang, D. P. Zhu, Y. Wu, Y. M. Yang, J. W. Yu, M. R. Ramaswamy, S. Y. Shi, M. Elyasi, K. L. Teo, Y. H. Wu and H. Yang,
NATURE COMMUNICATIONS, Vol. 8, Article Number: 1364 (2017).
Tunable magnetization relaxation of Fe2Cr1-xCoxSi half-metallic Heusler alloys by band structure engineering,
S. K. He, Y. F. Liu, Y. H. Zheng, Q. Qin, Z. C. Wen, Q. Y. Wu, Y. Yagn, Y. P. Wang, Y. P. Feng, K. L. Teo and C. Panagopoulos,
PHYSICAL REVIEW MATERIALS, Vol. 1, Article Number: 064401 (2017).
Current induced domain wall motion in antiferromagnetically coupled (Co70Fe30/Pd) multilayer nanowires,
Z. L. Meng, S. K. He, L. S. Huang, J. J. Qiu, T. J. Zhou, C. Panagopoulos, G. C. Han and K. L. Teo,
APPLIED PHYSICS LETTERS, Vol. 109, Article Number: 142403 (2016).
An Optically Readable InGaN/GaN RRAM,
K. Zheng, J. L. Zhao, Z. H. Zhang, Y. Ji, B. B. Zhu, S. T. Tan, H. V. Demir, K. L. Teo, and X. W. Sun, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 63, 2328-2333 (2016).
Color tunable electroluminescence and resistance switching from a ZnO-nanorod-TaOx-p-GaN heterojunction,
J. L. Zhao, K. L. Teo, K. Zheng and X. W. Sun,
NANOTECHNOLOGY, Vol. 27, Article Number: 115204 (2016)
Domain wall motion in ultrathin Co70Fe30/Pd multilayer nanowires with perpendicular anisotropy,
Z. L. Meng, S. H. He, J. J. Qiu, T. J. Zhou, G. C. Han and K. L. Teo
JOURNAL OF APPLIED PHYSICS, Vol. 119, Article Number: 083905 (2016).
Enhanced interlayer exchange coupling in antiferromagnetically coupled ultrathin (Co70Fe30/Pd) multilayers,
Z. L. Meng, J. J. Qiu, G. C. Han and K. L. Teo,
JOURNAL OF APPLIED PHYSICS, Vol. 118, Article Number: 243903 (2015)
High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys,
Y. P. Wang, S. T. Lim, G. C. Han, and K. L. Teo,
JOURNAL OF APPLIED PHYSICS, Vol. 118, Article Number: 233906 (2015).
Interfacial and bulk polaron masses in Zn1-xMgxO/ZnO heterostructures examined by terahertz time-domain cyclotron spectroscopy,
J. Lloyd-Hughes, M. Failla, J. Ye, S. P. P. Jones, K. L. Teo and C. Jagadish,
APPLIED PHYSICS LETTERS, Vol. 106, Article Number: 202103 (2015).
Gate-tuned quantum oscillations of topological surface states in beta-Ag2Te,
A. Sulaev, W. Zhu, K. L. Teo and W. Lan,
SCIENTIFIC REPORTS VOL. 5, Article Number: 8062 (2015).
Perpendicular magnetic anisotropy in Fe2Cr1-xCoxSi Heusler alloy,
Y. P. Wang, J. J. Qiu, H. Lu, J. Rong, G. C. Han and K. L. Teo,
JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOL. 47, Article Number: 495002 (2014).
Domain wall motions in perpendicularly magnetized CoFe/Pd multilayer nanowire,
Z.L. Zhao, M. Kumar, Qiu J. J., Han G. C., K. L. Teo and D. T Ngo,
Physics. D. Applied. Physics, VOL. 47, 34500 (2014).
Annealing temperature and thickness dependence of magnetic properties in epitaxial L10-Mn1.4Ga films,
Y. H. Zheng, G. C. Han, H. Lu, and K. L. Teo,
Journal of Applied Physics, VOL. 115, 043902 (2014).
Interfacial tuning of perpendicular magnetic anisotropy and spin magnetic moment in CoFe/Pd multilayers,
D. T.Ngo, Z. L. Meng, T. Tahmasebi, X. Yu, E. Thoeng, L. H. Yeo and A. Rusydi, G. C. Han and K. L. Teo,
Journal of Magnetism and Magnetic Materials, VOL. 350, 42 (2014).
Structural and magnetic properties of epitaxial Heusler alloy Fe2Cr0.5Co0.5Si
Y. P. Wang, G. C. Han, H. Lu, Qiu J. J., Yap, Q. J. and K. L. Teo,
Journal of Applied Physics, VOL. 115, 17C301 (2014).
Tunnel magnetoresistance effect in magnetic tunnel junctions using Fermi-level tuned epitaxial Fe2Cr1-xCoxSi Heusler alloy,
Y. P. Wang, G. C. Han, H. Lu, Qiu J. J., Yap, Q. J., J. Rong and K. L. Teo,
Journal of Applied Physics, VOL. 115, 17C709 (2014).
The Effect of Intrinsic Defects on Resistive Switching Based on p-n Heterojunction,
K. Zheng, X. W. Sun and K. L. Teo,
Nanoscience and Nanotechnology Letters, VOL. 5, 868 (2013).
Tunnel magnetoresistance effect and interface study in magnetic tunnel junctions using epitaxial Fe2CrSi Heusler alloy electrode,
Y. P. Wang, G. C. Han, H. Lu, Qiu J. J., Yap, Q. J., J. Rong and K. L. Teo,
Journal of Applied Physics, VOL. 114, 013910 (2013).
Anomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in Mg0.2Zn0.8O/ZnO heterostructures at room temperature,
J. X. Duan, N. Tang, J. D. Ye, F. H. Mei, K. L. Teo, Y. H. Chen, W. K. Ce and B. Shen,
Applied Physics, Letters, VOL. 102, 192405 (2013).
Resistive switching in a GaOx-NiOx p-n heterojunction,
K. Zheng, J. L. Zhao, X. W. Sun, V. Q. Vinh, K. S. Leck, R. Zhao, Y. C. Yeo, K. T. Law and K. L. Teo,
Applied Physics, Letters, VOL. 101, 143110 (2012).
Spin-polarized Wide Electron Slabs in Functionally Graded Polar Oxide Heterostructures,
J. D. Ye, S. T. Lim, M. Bosman, S. L. Cu, Y. D. Sheng, H. H. Tan, C. Jagadish, X. W. Sun and K. L. Teo,
Scientific Reports, 2, Article number 533 (2012).
Spin-polarized two-dimensional electron gas in undoped MgxZn1-xO/ZnO heterostructures,
K. Han, N. Tang, J. D. Ye, J. X. Duan, Y. C. Liu, K. L. Teo and B. Shen,
Applied Physics, Letters, VOL. 100, 192105 (2012).
The role of antiferromagnetic component in an intrinsic exchange biasing of a structurally single phase Cr2Te3 thin film,
H. Lu, S. T. Lim, J. F. Bi and K. L. Teo,
Journal of Applied Physics, VOL. 111, 07D719 (2012).
Exchange bias effect of Ge1-xMnxTe with antiferromagnetic MnTe and MnO materials,
S. T. Lim, H. Lu, J. F. Bi, T. Liew and K. L. Teo and K. L. Teo,
Journal of Applied Physics, VOL. 111, 07C308 (2012).
Weak localization and antilocalization of hole carriers in degeneratep-Ge1-xMnxTe,
S. T. Lim, L. Hui, J. F. Bi and K. L. Teo,
Journal of Applied Physics, VOL. 111, 07C308 (2011).
Impact of In situ vacuum anneal and SiH(4) treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors,
X. K. Liu, E. K. F. Low, J. S. Pan, W. Liu, L. S. Tan, K. L. Teo and Y. C. Yeo,
Applied Physics Letters, VOL. 99, 093504 (2011).
Exchange Interaction and Curie temperature in Ge1-xMnxTeferromagnetic semiconductors,
S. T. Lim, J. F. Bi, L. Hui and K. L. Teo,
Journal of Applied Physics, VOL. 110, 023905 (2011).
Magnetism and Magnetotransport studies in Ge0.9Mn0.1Te,
S. T. Lim, J. F. Bi, K. L. Teo and T. Liew,
Journal of Applied Physics, VOL. 109, 07C314 (2011).
An Indium-Free Transparent Resistive Switching Random Access Memory,
K. Zheng, X. W. Sun, J. L. Zhao, Y. Wang, H. Y. Yu, H. V. Demir, and K. L. Teo,
IEEE ELECTRON DEVICE LETTERS, VOL. 32 (2011).
Local stress induced by diamond-like carbon liner in AlGaN/GaNmetaloxide-semiconductor high-electron mobility transistors and impact on electrical characteristics,
X. K. Liu,B. Liu, K. F. Low, W. Liu, M. C. Yang, L. S. Tan, K. L. Teo and Y. C. Yeo,
Applied Physics Letters, VOL. 98, 183502 (2011).
Two-dimensional electron gas in Zn-polar ZnMgO/ZnOheterostructure,
J. D. Ye, P. Somasuntharam, S. T. Lim, J. F. Bi, X. W. Sun, G. Q. Lo and K. L. Teo,
Applied Physics Letters, VOL. 97, 111908 (2010).
An extremely long range exchange coupling in CrTe/ZnTe/MnTetrilayer,
L. Lu, J. F. Bi, K. L. Teo, T. Liew and T. C. Chong,
Journal of Applied Physics, VOL. 107, 09B107 (2010).
Antiferromagnetic thickness dependence of the CrTe-MnTe exchange bias system,
L. Lu, J. F. Bi, K. L. Teo, T. Liew and T. C. Chong,
Journal of Applied Physics, VOL. 107, 09D717 (2010).
n-ZnO/n-GaAs Heterostructured White Light-Emitting Diode: Nanoscale Interface Analysis and Electroluminescence Studies,
S. T. Tan, J. L. Zhao,S. Iwan X. W. Sun, X. H. Tang, J. D. Ye, M. Bosman, L. J. Tang. G. Q. Lo and K. L. Teo,
IEEE TRANSACTION ELECTRON DEVICE LETTERS, VOL. 57, 129-133 (2010).
