Power LDMOS and MEMS Micro-inductor/Capacitor for RFIC Integration

Work was carried out in building silicon-based LDMOS for high-frequency power application. This device is a key building block for RFIC power amplifier suitable for 2 GHz applications. NSTB grant was

received for the development of such a device and the micro-inductor/capacitor for RF MEMS system-on-a-chip (SoC) technology development.

Current focus is on the formation of partial SOI drain structure and stepped LDD layers to raise the device rating and reduce the parasitic drain-to-substrate capacitance. Technology of system-on-chip development will also be focused. Tuneable capacitor structure and the 3-D fully-suspended micro-inductor suitable for on-chip integration were also developed using silicon micromachining process. It is hoped to integrate the partial SOI LDMOS and the MEMS structures on the same silicon wafer for an RF power amplifier integrated circuit.