Development of Smart Power Synchronous Rectifier

Smart power synchronous rectifiers composed using BiCMOS and LDMOS integration technology is now under development. The main power MOS device is integrated with some smart features, so that, the device can act as a synchronous switch to control the current flow as if it was a diode rectifier. The on-state voltage is extremely low, currently achieved at 0.1 V for rectification. Device fabrication work is done in IME, Singapore. This project is funded by a university RP. This project has great

relevance to the low voltage power supply industry in applications such as the Pentium power supply.

Mircostructures on the chip(SOI Bulk Micromachining)