Chunxiang Zhu (Ph.D, HKUST, 2001)

Associate Professor

Department of Electrical and Computer Engineering

10 Kent Ridge Crescent

Singapore, 119260

Phone: 65-6874 8930

Fax: 65-6779 1103

Office: E1-08-08

Email: elezhucx@nus.edu.sg

Biography

Dr. Zhu received his BEng degree in electronic material in 1992 and MEng degree in microelectronics in 1995, both from the Xidian University, Xi'an, China, and Ph.D degree in electrical and electronic engineering from the Hong Kong University of Science and Technology, Hong Kong, China in 2001.

He joined the Department of Electrical and Computer Engineering, National University of Singapore, Singapore, in February 2001 as an Assistant Professor. Since July 2007, he has been an Associate Professor. He has also been a Faculty Associate in Institute of Microelectronics (IME) since August, 2004. His research interests include semiconductor devices and processing. He is a member of IEEE.

Teaching

· EE5502: MOS Devices

· EE5516: Plasma Process and Interconnects

· EE3406E: Microelectronic Materials

Research Areas

· Advanced Si CMOS devices: physics and technology

· Passive devices

· Non-volatile memory devices

· Thin-film transistors

Active Research Projects

· Physics and Technologies of High-K Dielectric Materials for MIM Capacitors in Si RF IC Applications

· Front End Process Related Research for Advanced CMOS Technology

· High Performance Metal-Insulator-Metal (MIM) Capacitors with High-K dielectric for Si RF and Mixed-Signal Integrated Circuits Applications

· Polymer/organic memory devices

Please see Silicon Nano Device Lab (SNDL) for additional information.

Journal Publications

1. Nan Wu, Qingchun Zhang, Chunxiang Zhu, DSH Chan, MF Li, N. Balasubramanian, A. Chin, and DL Kwong, "An alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-K gate dielectric," Applied Physics Letters, Vol. 85, No. 18, pp.4127 - 4129, 2004.

2. Xiongfei Yu, Chunxiang Zhu, MB Yu, and DL Kwong ,"Improvements on Surface Carrier Mobility and Electrical Stability of MOSFETs Using HfTaO Gate Dielectric", IEEE Trans Electron Devices, Vol. 51, No. 12, pp. 2154-2160, 2004.

3. Xiongfei Yu, Chunxiang Zhu, MF Li, A. Chin, AY Du, WD Wang, and DL Kwong, "Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate," Applied Physics Letters, Vol. 85, No. 14, pp.2893-2895, 2004.

4. Tony Low, M.F. Li, Chen Shen, YC Yeo, YT Hou, Chunxiang Zhu, Albert Chin, and Dim-Lee Kwong, "Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors", Applied Physics Letters, Vol. 85, No. 12, pp.2402-2404, 2004.

5. S.-J. Ding, H. Hu, Chunixang Zhu, M.F. Li, S.J. Kim, B.J. Cho, D.S.H. Chan, M.B. Yu, A.Y. Du, A. Chin, and D.L. Kwong, "Evidence and understanding of atomic-layer-deposited HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts", IEEE Electron Device Letters, Vol. 25, No. 10, pp. 681-683, 2004.

6. Qingchun Zhang, Nan Wu, and Chunxiang Zhu, "The Electrical and Material Properties of HfOxNy Dielectric on Germanium Substrate," Jpn J of Appl. Phys., Pt 2: Letter, Vol. 43, No. 9AB, pp. L1208-L1210, 2004.

7. Nan Wu, Qingchun Zhang, Chunxiang Zhu, D.S.H. Chan, Anyan Du, N. Balasubramanian, MF Li, A. Chin, Johnny Sin, D.L. Kwong, "A TaN-HfO2-Ge pMOSFET with Novel SiH4 Surface Passivation," IEEE Electron Device Letters, Vol. 25, No. 9, pp. 631-633, 2004..

8. Shiyang Zhu, Jingde Chen, M.-F Li, S.J. Lee, Jagar Singh, C. Zhu, Anyan Du, C.H. Tung, Albert Chin, and D.L. Kwong, "N-type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide," IEEE Electron Device Letters, Vol. 25, No. 8, 565-567, 2004.

9. DS Yu, KC Chiang, CF Cheng, A. Chin, C. Zhu, MF Li, and DL Kwong, "Fully Silicided NiSi:Hf–LaAlO3/SG–GOI n-MOSFETs With High Electron Mobility," IEEE Electron Device Letters, Vol. 25, No. 8, pp. 559-561, 2004.

10. S.J. Kim, B.J. Cho, MF Li, S.J. Ding, C. Zhu, MB Yu, B. Narayanan, A. Chin, A.and D.L. Kwong, "Improvement of Voltage Linearity in High-k MIM Capacitors Using HfO2-SiO2 Stacked Dielectric," IEEE Electron Device Letters, Vol. 25, No. 8, pp. 538- 540, 2004.

11. Zhibin Xiong, Haitao Liu, Chunxiang Zhu, Johnny KO Sin, "Characteristics of High-K Spacer Offset-Gated Polysilicon Thin-Film Transistors," IEEE Trans. Electron Devices, Vol. 51, No. 8, pp. 1304-1308, 2004.

12. Xiongfei Yu, Chunxiang Zhu, M.F. Li, Albert Chin, M.B. Yu, A.Y. Du, and D.-L. Kwong, "Mobility Enhancement in TaN Metal Gate MOSFETs Using Tantalum Incorporated HfO2 Gate Dielectrics," IEEE Electron Device Letters, Vol. 25, No. 7, pp. 501-503, 2004..

13. S.J. Ding, H. Hu, Chunxiang Zhu, S.J. Kim, X.F. Yu, M.-F. Li, B.J. Cho, D.S.H. Chan, M.B. Yu, S.C. Rustagi, A. Chin, and D.-L. Kwong, "RF, DC and Reliability Characteristics of Atomic Layer Deposited HfO2-Al2O3 Laminate MIM Capacitors for Si RF IC Applications ," IEEE Trans. Electron Devices, Vol. 51, No. 6, pp. 886-894, 2004.

14. Nan Wu, Qingchun Zhang, Chunxiang Zhu, C.C. Yeo, S.J. Whoang, DSH Chan, M.F. Li, B.J. Cho, A. Chin, D.-L. Kwong, A.Y. Du, C.H. Tung, N. Balasubramanian, "Effect of surface NH3 anneal on physical and electrical properties of HfO2 films on Ge substrate," Applied Physics Letters, Vol. 84, No. 19, pp. 3741-3743, 2004.

15. S.Y. Zhu, H.Y. Yu, S.J.Whang, J.H.Chen, C. Shen, Chunxiang Zhu, S.J. Lee, M.F.Li, DSH Chan, W.J. Yoo, A. Du, C.H.Tung, J. Singh, A. Chin, D.L. Kwong, "Schottky Source/Drain MOSFETs with High-K Gate Dielectrics and Metal Gate Electrode," IEEE Electron Device Letters, Vol. 25, No. 5, pp. 268-270, 2004.

16. Zhibin Xiong, Haitao Liu, Chunxiang Zhu, Johnny K. O. Sin, "A Novel Self-Aligned Offset-Gated Polysilicon Thin-Film Transistor using High-k Dielectric Spacers," IEEE Electron Device Letters, Vol. 25, No. 4, pp. 194-195, 2004.

17. D. S. Yu, C. H. Huang, Albert Chin, Chunxiang Zhu, M. F. Li, B. J. Cho, D. L. Kwong, "Al2O3/Ge-On-Insulator n- and p-MOSFETs with Fully NiSi and NiGe Dual Gates", IEEE Electron Device Letters, Vol. 25, No. 3, pp. 138-140, March 2004.

18. VC Ngwan, Chunxiang Zhu, Ahila Krishnamoorthy, "Dependence of leakage mechanisms on dielectric barrier in Cu-SiOC damascene interconnects," Applied Physics Letters, Vol. 84, No. 13, pp. 2316-2318, 2004.

19. DS Yu, CH Wu, CH Huang, A. Chin, WJ Chen, C. Zhu, MF Li, and Dim-Lee Kwong, "Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs," IEEE Electron Device Letters, Vol. 24, No. 12, pp. 739-741, 2003.

20. S. J. Ding, H. Hu, H. F. Lim, S. J. Kim, X. F. Yu, Chunxiang Zhu, M. F. Li, B. J. Cho, DSH Chan, S. C Rustagi, M. B. Yu, A. Chin, D. -L. Kwong, "High Performance MIM Capacitor using ALD high-K HfO2-Al2O3 Laminate Dielectrics," IEEE Electron Device Letters, Vol. 24, No. 12, pp. 730-732, 2003.

21. Hang Hu, Chunxiang Zhu, YF Lu, YH Wu, T. Liew, MF Li, BJ Cho, WK Choi, and N. Yakovlev, "Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications," Journal of Applied Physics, Vol. 94, No. 1, pp. 551-557, 2003.

22. S. J. Kim, B. J. Cho, M. F. Li, C. Zhu, A. Chin, and D. L. Kwong, "Lanthanide (Tb)-doped HfO2 for High Density MIM Capacitors," IEEE Electron Device Letters, Vol. 24, No. 7, 2003.

23. S. J. Kim, B. J. Cho, M. F. Li, X. Yu, C. Zhu, A. Chin, and D. L. Kwong, "PVD HfO2 for High Precision MIM Capacitor Applications," IEEE Electron Device Letters, Vol. 24, No. 6, 2003.

24. CY Lin, MW Ma, A. Chin, YC Yeo, C. Zhu, MF Li, and Dim-Lee Kwong, "Fully silicided NiSi gate on La2O3 MOSFETs," IEEE Electron Device Letters, Vol. 24, No. 5, pp. 348-350, 2003.

25. H. Y. Yu, H. F. Lim, M. F. Li, C. Zhu, C. H. Tung, A. Y. Du, W. D. Wang, D. Z. Chi, and D. L. Kwong, "Physical and Electrical Characteristics of HfN Gate Electrode for Advanced MOS Devices," IEEE Electron Device Letters, Vol. 24, No. 5, 2003.

26. MY Yang, CH Huang, A. Chin, C. Zhu, MF Li, and Dim-Lee Kwong, "High density MIM capacitors usign AlTaOx dieelctrics," IEEE Electron Device Letters, Vol. 24, No. 5, pp. 306-308, 2003.

27. KT Chan, A. Chin YD Lin, CY Chang, CX Zhu, MF Li, D.L. Kwong, S. McAlister, DS Duh, and WJ Lin, "Integrated antennas on Si with over 100 GHz performance fabricated using an optimized proton implantation process," IEEE Wireless & Microwave Components Letters, Vol. 13, No. 10, pp. 431-433, 2003.

28. Moon Sig Joo, Byung Jin Cho, Chia Ching Yeo, Nan Wu, Hongyu Yu, Chunxiang Zhu, Ming Fu Li, Dim Lee Kwong, and N. Balasubramanian, "Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric," Jpn. J. Appl. Phys., Vol. 42, Part 2, No. 3A, 1 March 2003.

29. XF Yu, Chunxiang Zhu, H Hu, Albert Chin, MF Li, BJ Cho, D.-L. Kwong, MB Yu, and PD Foo, "A high density MIM capacitors (13fF/um2) using ALD HfO2 dielectrics, " IEEE Electron Device Letters, Vol. 24, No. 2, pp. 63-65, 2003.

30. Hang Hu, Chunxiang Zhu, XF Yu, Albert Chin, MF Li, BJ Cho, D.-L. Kwong, MB Yu, PD Foo, Xinye Liu, and J. Winkler, "MIM capacitors using atomic-layer-deposited high-K (HfO2)1-x(Al2O3)x dielectrics," IEEE Electron Device Letters, Vol. 24, No.2, pp. 60-62, 2003.

31. HY Yu, N. Wu, MF Li, Chunxiang Zhu, BJ Cho, D.-L. Kwong, CH Tung, JS Pan, JW Chai, WD Wang, DZ Chi, CH Ang, and JZ Zheng, "Thermal stability of (HfO2)x(Al2O3)1-x on Si," Applied Physics Letters, Vol. 81, No. 19, pp. 3618-3620, 2002.

32. Hang Hu, Chunxiang Zhu, YF Lu, MF Li, BJ Cho, and WK Choi, "A high performance MIM capacitor using HfO2 dielectrics," IEEE Electron Device Letters, Vol. 23, No. 9, pp. 514-516, 2002.

33. Chunxiang Zhu, Johnny K.O. Sin, and HS Kwok, "Characteristics of p- and n-channel poly-Si/SiGe/Si sandwiched conductivity modulated thin-film transistors," IEEE Trans. Electron Devices, Vol. 47, No. 11, pp. 2188-2193, 2000.

34. Shengdong Zhang, Chunxiang Zhu, JN Li, Johnny KO Sin, and Philip KT Mok, "Ultra-thin elevated channel poly-Si TFT technology for fully-integrated AMLCD system on glass," IEEE Trans. Electron Devices, Vol. 47, No.3, pp. 569-575, 2000.

35. Shengdong Zhang, Chunxiang Zhu, Johnny KO Sin, and Philip KT Mok, "A novel ultra-thin elevated channel low temperature poly-Si TFT," IEEE Electron Device Letters, Vol. 20, No. 11, pp. 569-571, 1999.

36. Chunxiang Zhu and Johnny K.O. Sin, "A p-channel poly-Si/SiGe/Si sandwiched conductivity modulated thin film transistor," IEEE Electron Device Letters, Vol. 20, No. 9, 1999.

37. Chunxiang Zhu, Johnny K.O. Sin, and WT Ng, "Characteristics of p-channel polysilicon conducitity modulated thin-film transistors," IEEE Trans. Electron Devices, Vol. 46, No. 7, pp. 1406-1410, 1999.

Conference Publications

1. Shi-Jin Ding, H. Hu, Chunxiang Zhu, S. J. Kim, M. F. Li, B. J. Cho, A. Chin, and D.-L. Kwong, "A Comparison Study of High-Density MIM Capacitors with ALD HfO2-Al2O3 Laminated, Sandwiched and Stacked Dielectrics," The 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, Oct, 2004.

2. D.S. Yu, Albert Chin, B.F. Hung, W.J. Chen, C.X. Zhu, M.F. Li, S.Y. Zhu and D.L. Kwong, "Low Workfunction Fully Silicided Gate on SiO2/Si and LaAlO3/GOI n-MOSFETs," 62nd Device Research Conference (DRC), pp. 21, Notre Dame, Indiana, June, 2004.

3. C.H. Lai, M.W. Ma, C.F. Cheng, Albert Chin, S.P. McAlister, C.X. Zhu, M.F. Li, and D.L. Kwong, "A Novel Program-Erasable Capcitor Using High-K AlN Dielectric," 62nd Device Research Conference (DRC), pp. 77, Notre Dame, Indiana, June, 2004.

4. Nan Wu, Qingchun Zhang, Chunxiang Zhu, Daniel S.H. Chan, M.F. Li, N. Balasubramanian, L.K. Bera, A.Y. Du, Albert Chin, Johnny K.O. Sin, and D.-L. Kwong, "A Novel Surface Passivation Process for HfO2 Ge MOSFETs," 62nd Device Research Conference (DRC), pp. 19, Notre Dame, Indiana, June, 2004.

5. Xiongfei Yu, Chunxiang Zhu, X.P. Wang, M.F. Li, A. Chin, A.Y. Du, W.D. Wang and D.-L. Kwong, "High Mobility and Excellent Electrical Stability of MOSFETs Using a Novel HfTaO Gate Dielectric," 2004 Symposium on VLSI Technology, pp. 110, Honolulu, Hawaii, June 2004.

6. S. J. Kim, B. J. Cho, M. F. Li, S. J. Ding, M. B. Yu, Chunxiang Zhu, A. Chin, and D. -L. Kwong, "Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs," 2004 Symposium on VLSI Technology, pp. 218, Honolulu, Hawaii, June 2004.

7. Albert Chin, D.S. Yu, B.F. Hung, W.J. Chen, C.X. Zhu, M.F. Li, and D.L. Kwong, "High Electron and Hole Mobility Fully-Silicided-Gate/High-K/Ge-On-Insulator C-MOSFETs with Process Comparable to Current VLSI," 2nd International SiGe Technology and Device Meeting (ISTMD), May, 2004, Frankurt, Germanium (Invited).

8. VC Ngwan, Chunxiang Zhu, and A. Krishnamoorthy, "Analysis of leakage mechanisms and leakage pathways in intra-level Cu interconnects," Intl. Reliability Physics Symposium (IRPS), Accepted.

9. Nan Wu, Qingchun Zhang, Chunxiang Zhu, MF Li, DSH Chan, A Chin, DL Kwong, LK Bera, N. Balasubramanian, AY Du, CH Tung, Haitao Liu, Johnny KO Sin, "Ge pMOSFETs with MOCVD HfO2 Gate Dielectrics," 2003 IEEE Int. Semiconductor Device Research Symposium, pp. 252, Washington DC, December, 2003.

10. Qingchun Zhang, Nan Wu, Chunxiang Zhu, MF Li, DSH Chan, A Chin, DL Kwong, LK Bera, N. Balasubramanian, AY Du, CH Tung, Haitao Liu, Johnny KO Sin, "Germanium pMOSFET with HfON gate dielectric," 2003 IEEE Int. Semiconductor Device Research Symposium, pp. 256, Washington DC, December, 2003.

11. Xiongfei Yu, Chunxiang Zhu, Qingchun Zhang, Nan Wu, Hang Hu, A Chin, MF Li, DSH Chan, WD Wang, Dim-Lee Kwong, "Improved Crystallization Temperature and Interfacial Properties of HfO2 Gate Dielectrics by adding Ta2O5 with TaN Metal Gate," 2003 IEEE Int. Semiconductor Device Research Symposium, pp. 62, Washington DC, December, 2003.

12. Hang Hu, Shi-Jing Ding, Chunxiang Zhu, Subhash C Rustagi, YF Lu, MF Li, Byung Jin Cho, DSH Chan, MB Yu, Albert Chin, Dim-Lee Kwong, "Investigation of PVD HfO2 MIM capacitors for Si RF and mixed signal ICs application," 2003 IEEE Int. Semiconductor Device Research Symposium, pp. 328, Washington DC, December, 2003.

13. Shiyang Zhu, HY Yu, SJ Whang, JH Chen, C Shen, Chunxiang Zhu, SJ Lee, MF Li, DSH Chan, WJ Yoo, Anyan Du, CH Tung, Jagar Singh, Albert Chin, DL Kwong, "Low Temperature MOSFET Technology with Schottky Barrier Source/Drain, High-K Gate Dielectrics and Metal Gate Electrode," 2003 IEEE Int. Semiconductor Device Research Symposium, pp. 254, Washington DC, December, 2003.

14. Zhibin Xiong, Haitao Liu, Chunxiang Zhu, Johnny K. O. Sin, "A Novel High-k Dielectric Spacer Polysilicon Thin-Film Transistor," IDW'03 (The 10th International Display Workshops), Fukuoka, Japan, December, 2003.

15. A. Chin, K. T. Chan, H. C. Huang, C. Chen, V. Liang, J. K. Chen, S. C. Chien, S. W. Sun, D. S. Duh, W. J. Lin, C. Zhu, M.-F. Li, S. P. McAlister and D. L. Kwong, "RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation," International Electron Devices Meeting (IEDM), December, 2003.

16. H. Huang, D. S. Yu, A. Chin, W. J. Chen, C. X. Zhu, M.-F. Li, B. J. Cho, and D. L. Kwong, "Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO2/Si and Al2O3/Ge-On-Insulator MOSFETs," International Electron Devices Meeting (IEDM), December, 2003.

17. Chunxiang Zhu, H. Hu, X. Yu, S. J. Kim, A. Chin, M. F. Li, B. J. Cho and D. L. Kwong, "Dependences of VCC (Voltage Coefficient of Capacitance) of High-K HfO2 MIM Capacitors: An Unified Understanding and Prediction," International Electron Devices Meeting (IEDM), December, 2003.

18. H. Hu, S. J. Ding, H. F. Lim, Chunxiang Zhu, M.F. Li, S.J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, B. J. Cho, D.S.H. Chan, S. C. Rustagi, M. B. Yu, C. H. Tung, A. Du, D. My, P. D. Fu, A. Chin, and D. L. Kwong, "High Performance HfO2-Al2O3 Laminate MIM Capacitors by ALD for RF and Mixed Signal IC Applications," International Electron Devices Meeting (IEDM), December, 2003.

19. T. Low, Y. T. Hou, M. F. Li, C. Zhu, A. Chin, G. Samudra1 and D. -L. Kwong, "Investigation of Performance Limits of Germanium Double-Gated MOSFETs," International Electron Devices Meeting (IEDM), December, 2003.

20. CH Huang, MY Yang, A. Chin, CX Zhu, MF Li, and D.L. Kwong, "High density RF MIM capacitors using high-K AlTaOx dielectrics," IEEE MTT-S International Microwave Symp., June, 2003.

21. KT Chan, A. Chin, JT Kuo, CY Chang, DS Duh, WJ Lin, CX Zhu, MF Li, and DL Kwong, "Microwave coplanar filters on Si substrates," IEEE MTT-S International Microwave Symp., June, 2003.

22. CH Huang, MY Yang, A. Chin, WJ Chen, CX Zhu, BJ Cho, MF Li, and D.L. Kwong, "Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2O3 gate dielectrics," Symp. on VLSI Technology, June, 2003.

23. T Low, YT Hou, MF Li, C Zhu, D.L. Kwong, and A. Chin, "Germanium MOS: An evaluation from carrier quantization and tunneling current," Symp. on VLSI Technology, June, 2003.

24. HY Yu, HF Lim, JH Chen, MF Li, CX Zhu, D.L. Kwong, CH Tung, KL Bera, and CJ Leo, "Robust HfN metal gate electrode for advanced MOS devices application," Symp. on VLSI Technology, June, 2003.

25. SJ Kim, BJ Cho, MF Li, Chunxiang Zhu, A Chin, and D.L. Kwong, "HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/mixed IC applications," Symp. on VLSI Technology, June, 2003.

26. Hang Hu, Chunxiang Zhu, YF Lu, JN Zeng, YH Wu, T Liew, MF Li, BJ Cho, and WK Choi, "Material and electrical characterization of HfO2 films for MIM capacitors applications," Material Research Society (MRS) 2003 Spring Meeting, 2003.

27. XF Yu, Chunxiang Zhu, H Hu, Albert Chin, MF Li, BJ Cho, D.L. Kwong, PD Foo, and MB Yu, "MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications," Material Research Society (MRS) 2003 Spring meeting, 2003.

28. Zhibin Xiong, Haitao Liu, Chunxiang Zhu, and Johnny KO Sin, "A novel self-aligned ultra-thin elevated channel low temperature CMOS poly-Si TFT," (N2) Thin Film Transistor Technologies VI (TFTTVI), 202nd ECS Meeting, 2002.

29. H Xie, WJ Yoo, Chunxiang Zhu, SY Lim, D Tan, BJ Cho, and D Lai, "Electrical properties of CMOS devices with Cu local interconnects," 8th International Conference on Dielectrics & Conductors for ULSI Multilevel Interconnection (DCMIC), Feb, 2002.

30. Chunxiang Zhu, WJ Yoo, D Tan, SY Lim, and BJ Cho, "Effects of Cu diffusion on MOSFET electrical properties," 18th International VLSI Multilevel Interconnection Conference (VMIC), Nov, 2001.

31. Chunxiang Zhu and Johnny KO Sin, "Poly-Si/SiGe/Si sandwiched conductivity modulated TFT for high-voltage drivers in large area electronics," Proc. of ESSDERC'99, pp. 692-695, Belgium, 1999.

32. Chunxiang Zhu, Shengdong Zhang, Johnny KO Sin, and Philip KT Mok, "Ulra-thin elevated channel low temperature poly-Si TFTs for fully-integrated AMLCD systems on glass," Proc. of ESSDERC'99, pp. 708-711, Belgium, 1999.

33. Chunxiang Zhu, Johnny KO Sin, and HS Kwok, "Experiment characteristics of p-channel conductivity modulated thin-film transistors," Proc. of ASID'99, 1999.

Updated on 16 September, 2004.