Publication list for year 1999
 

Journal:

1. Chetchekine D G; Feng Z C; Gilliland G D; Chua S J & Wolford D,
“Donor-hydrogen bound excition in epitaxial GaN”, Physical Review,  B, Vol. 60, No. 23, pp 15980-15984 (1999)

2. Yang T R; Lu C C; Chou W C; Feng Z C & Chua S J,
“Infrared and Raman spectroscopic study of Zn1-xMnxSe materials grown by molecular-beam epitaxy” , Physical Review B, Vol. 60, No. 23, pp 16058-16064 (1999)

3. Liu W; Li M-F; Feng Z-C; Chua S J; Akutsu N & Koh M,
“Material Properties of GaN Grown by MOCVD”, Surface and Interface Analysis, Vol. 28, pp 150-154 (1999)

4. Feng Z C; Hou Y T; Chua S J & Li M F,
“Infrared Reflectance Studies of GaN Epitaxial Films on Sapphier Substrate”, Surface & Interface Analysis, Vol. 28, pp 166-169 (1999)

5. Li Z F; Lu W; Ye H J; Chen Z-H; Yuan X-Z; Dou H-F & Shen S-C; Li G & Chua S J,
“Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy”, J. Appl. Phys., Vol. 86, No. 5, pp 2691-2695 (1999)

6. Li G; Chua S J; Teng J-H; Wang W; Feng Z C & Huang Y H,
“Blueshift of In0.2Ga0.8N/GaN single quantum well band gap energy by rapid thermal annealing”, American Vacuum Society, Vol. 17, No. 4, pp 11507-1509 (1999)

7. Li G; Chua S J & Wang W,
“The Hall mobility and its relationship to the persistent photoconductivity of undoped GaN”, Solid State Communications Vol. 111, pp 659-663 (1999)

8. Feng Z C; Chua S J; Tone K & Zhao J H
“Recrystallization of carbon-aluminum ion coimplanted epitaxial silicon carbide-evidenced by room temperature optical measurements”, Appl. Phys. Letts, Vol. 75, No. 4, pp 472-476 (1999)

9. Liu W; Li M F; Chua S J; Akutsu N & Matsumoto K,
“Photoreflectance study on the surface states of n-type GaN’, Semicond. Sci. Technol., Vol. 14, pp 399-402 (1999)

10. Liu W; Ming F-L; Chua S J; Akutsu N & Koh M,
“Photo reflectance study of Au-Schottky Contacts on n-GaN”, Journal of Electronic Materials, Vol. 28, No. 4, pp 360-363 (1999)

11. Gibart P; Beaumont B & Chua S J,
“Spatially resolved photoluminescence of laterally overgrown GaN”, Journal of Cyrstal Growth Vol. 201/202 pp 365-370 (1999)

12. Fleischer K; Toth M; Phillips M R; Zou J; Li G & Chua S J,
“Depth Profiling of GaN by Cathodoluminescence microanalysis”, Appl. Phys. Letts. Vol. 74, No. 8, pp 1114-1116 (1999)

13. Li G; Chua S J; Xu S J; Wang W, Li P; Beaumont B & Gilbart P,
“Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN”, Appl. Phys Letts, Vol. 74, No. 19, pp 2821-2823 (1999)

14. Kachwalla Z.; Wiggins J. W., Chua S. J. and Wang W.,
“The Influence of Pt in Ti-Al-Pt-Au Ohmic Contact on n-type GaN”, Phys. Stat. Sol. (a), pp 779 – 782, 1999

15. Zhang X; Chua S J; Li P; Chong K-B & Feng Z-C,
“Enhanced optical emission from GaN films grown on a silicon substrate, Appl. Phys Letts, Vol. 74, No. 14 pp 1984-1986 (1999)

16. Wang X C; Xu S J; Chua S J; Li K; Zhang X H; Zhang Z H; Chong K B & Zhang X,
“Strong influence of SiO2 thin film on properties of GaN epilayers”,  Applied Sicence Letters, Vol. 74, No. 6, pp 818-820 (1999)

17. Wang X C; Xu S J; Chua S J; Zhang Z H; Fan W J; Wang C H; Jiang J & Xie X G, “Widely tunable intersubband energy of self-assembled InAs/Ga/As quantum dots due to interface intermixing”, J Appl. Phys., Vol. 86, No. 5, pp 2687-2690 (1999)

18. Yang T.R., Lu C. C., Chou W C, Feng Z. C. and Chua S. J. “Infrared and Raman Spectrosopic study of Zn1-xMnxSe Materials Grown by Molecular Beam Epitaxy”, Phys. Rev. B Vol. 60, No. 23, pp 16058 – 16064, (1999)

19. Li P; Chua S J; Li G; Wang W & Guo Y P,
“Study of Phase-seperated InGan Grown by Metalorganic Vapor Phase Epitaxy”, Phys. Stat. Sol., Vol. 216, No. 145, pp 145-149 (1999)

20. Zhang X; Chua S J; Liu W & Li P,
“Enhanced Blue-Light Emission from InGaN/GaN Quantum Wells Grown over Multilayered Buffer on Silicon Substrate by Metal Organic Chemical Vapor Deposition”, Phys. Stat. Sol. Vol. 216, No. 307, pp 307-309, (1999)

21. Jie Y X; Wu X, Huan C H A; Wee A T S; Guo Y; Zhang T J; Pan J S,; Chai J & Chua S J, “Synthesis and Chracterization of Ge Nanocrystals Immersed in Amorphous SiOx Matrix”, Surface and Interface Analysis, Vol. 28, pp 195-199 (1999)

22. Hou Y T; Feng Z C; Li M F & Chua S J,
“Characterization of MBE-grown Ga1-xA1xAs Alloy Films by Raman Scattering”, Surface and Interface Analysis, Vol. 28, pp 163-165 (1999)

23. Li W S; Shen Z X; Feng Z C & Chua S J,
“Raman Scattering and Transverse Effective Charge of MOCVD-grown GaN Films Between 78 and 870K”, Surface and Interface Analysis, Vol. 28, pp 173-176 (1999)

24. Li G; Chua S J & Wang W;
“The Hall mobility and its relationship to the persistent photoconductivity of undoped GaN”, Solid State Communications, Vol. 111, pp 659-663 (1999)

25. Hou Y T; Feng Z C; Chua S J; Li M F; Akutsu N & Matsumoto K,
“Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire”, Appl. Phys. Letts, Vol. 75, No. 20, pp 3117-3119 (1999)

Conference

1. J.H. Teng, S. J. Chua, Y. H. Huang and Z. H. Zhang,
“Multi-wavelength lasers fabricated by a novel impurity free quantum well intermixing technology”, Proceedings of SPIE ISPA ’99, Vol. 3896, pp191-198, Singapore, 1999

2. J. H. Teng, S. J. Chua, G. Li, A. S. Helmy and J. H. Marsh,
“Control of energy shift in impurity free quantum well intermixing”, Proceedings of IEEE EDMO ’99, pp 194-199, London, 1999

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