Publication List for year 2003
 

Journal

1.      X.C. Wang, G.C. Lim, H.Y. Zheng, J.L. Tan, W. Liu and S.J. Chua, “Excimer-Laser-Induced oxidation of GaN epilayer”, Jpn. J. Appl. Phys., Vol. 42, pp. 5638 – 5641, (2003)

 

2.      K.Y. Zang, S.J. Chua, L.S. Wang and C.V. Thompson, “Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films”, Phys. Stat. Sol. (c) , No.7, pp, 2067 – 2071 (2003)

 

3.      P. Chen, S.J. Chua, W.D. Wang, D.Z. Chi and Z.L. Miao, “Influence of the polarization on interfacial properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN heterojunction metal-insulator-semiconductor structures”, J. of Appl. Phys., Vol. 94, N0. 7, pp. 4702- 4704, 2003

 

4.      M.A. Rana, T. Osipowicz, H.W. Choi, M.B.H. Breese and S.J. Chua, “A study of the material loss and other processes involved during annealing of GaN at growth temperatures”, Chem. Phys. Letts., Vol. 380, pp. 105 -110, (2003)

 

5.      L. S. Wang, W. H. Sun and S. J. Chua and Mark Johnson, “Comparative Investigation of Photoluminescence of In- and Si- doped GaN/AlGaN Multi-Quantum Wells”. Materials Science and Engineering B, 97(2), pp. 196-198 (2003)

 

6.      Y. Hairong, S. J. Chua, S Tripathy, and P. Chen. “Effects of Indium Surfactant on the crystalline and optical properties of GaN during initial growth stage”. J. Vac. Sci. and Tech. A, Vol 21 No 6, pp-1814-1819, (2003)

 

7.      Y. Tian, S.J. Chua and H. Wang. “Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors”, Solid-St. Electronics, pp. 1863 – 1867, (2003)

 

8.      Y. Tian, S.J. Chua and YX Jin, “Analysis of the detectivity for Triple-layer Heterojunction GaSb/GaInAsSb infrared detectors”, Microelectronics J, Vol. 34, pp. 305-312, (2003)

 

9.      T.L. Song, S.J. Chua, E.A. Fitzgerald, P. Chen and S. Tripathy, “Strain relaxation in graded InGaN/GaN epilayers grown on sapphire”,  Appl. Phys. Letts., vol. 83, No. 8, pp. 1545-1547,  2003

 

10.  W. Liu, S. J. Chua, X.H. Zhang and J. Zhang, “Effect of High Temperature and Interface Treatments on Photolumnescence from InGaN/GaN Multiple Quantum Wells with Green Light Emission” Appl. Phys. Letts. Vol. 83. No. 5, pp. 914 -916, (2003)

 

11.  B. J Li, S. J. Chua and E.A. Fitzgerald, “Theoretical analysis of Si1-x-yGexCy near-infrared photodetectors, Optical Engineering, Vol. 42, No. 7, pp. 1993-1999, 2003

 

12.  J.R. Dong, J. H. Teng, S. J. Chua, Y. J. Wang, B.C. Foo, H. R. Yuan and S Yuan, “High quality AlGaInP epilayers grown by MOCVD using TBP for red lasers”, J. Crystal Growth, Vol. 253, pp. 161 - 166. (2003)

 

13.  J.R. Dong, J. H. Teng, S. J. Chua, B. C. Foo, Y. J. Wang, H. R. Yuan and S Yuan, “650 nm AlGaInP multiple quantum well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine”, Appl Phys. Letts. Vol. 83, No. 4, pp. 596 -598, (2003)

 

14.  C. Y. Liu, S. Yuan, J. R. Dong and S. J. Chua, M. C. Y. Chan, S. Z. Wang, Temperature-dependent Photoluminescence of GaInP/AlGaInP Multiple Quantum Well Laser Structure Grown by Metalorganic Chemical Vapor Deposition with Tertiarybutylarsine and Tertiarybutylphosphine”, J. Appl. Phys., Vol 94 No 5, pp 2962-2967,  (2003)

 

15.  R.D Yang, S Tripathy, FEH Tay, LM Gan and SJ Chua, “Photoluminescence and micro-Ramam scattering in Mn-doped ZnS nanocrystalline semiconductors”, J. Vac. Sci. Technol. Vol. B 21(3), pp. 984 – 988, (2003)

 

16.  B. J. Li, S. J. Chua, Y Nikolai, L. S. Wang and E. K. Sia, “Properties of Schottky contact of Titanium on low doped p-type SiGeC alloy by rapid thermal annealing, Solid St. Electron., Vol. 47, pp. 602 -605, (2003)

 

17.  P. Chen, S. J. Chua, and Z. L. Miao, Photoluminescence of InGaN/GaN multiple quantum wells originating from complete phase separation, J. Appl. Phys., Vol 93, No 5, pp. 2507-2511, (2003)

 

18.  Su Lu, Qu-Li Fan, Soo-Jin Chua and Wei Huang, “Synthesis of conjugated-ionic block copolymers by controlled radical polymerization”. MacroMolecules, Vol. 36, pp. 304 -310, (2003)

 

19.  L. Ke, K.R. Zhang, N. Yakovlev, S. J. Chua and P. Chen "Secondary ion mass spectroscopy study of failure mechanism in organic light emitting devices", Materials Science and Engineering B, Vol. 97, pp. 1-4, (2003)

 

20.  M.A. Rana, H. W. Choi, M. B .H. Breese, T. Osipowicz, S. J. Chua and F. Watt, “A study of the decomposition of GaN during annealing over a wide range of temperatures”, Mat. Re. Soc. Symp. Proc. Vol. 742, pp. L11.28.1 - L11.28.6 (2003)

 

21.  M. A. Rana, T. Osipowicz, H. W. Choi, M. B. H. Breese, F. Watt and S. J. Chua, “Stoichiometric and structural alterations in GaN thin films during annealing”, Appl.  Phys. A. (Mtls. Sci. and Processing), Vol. 76, pp. 103 – 108, (2003)

 

Conferences

 

1.      C.B. Soh, J. Zhang, D.Z. Chi, S.J. Chua, H.F. Lim and R.T.P. Lee, “Characterisation of High quality continuous GaN films grown on Si-doped cracked GaN template”, 2003 MRS Meeting 

 

2.      R.T.P. Lee, D.Z. Chi and S.J. Chua, “NiSi formation in the Ni(Ti)/SiO2/I System”, 2003 MRS Meeting 

 

3.      M.A. Rana, T. Osipowicz, H.W. Choi, M.B.H. Breese, F.  Watt and S.J. Chua, “Effects of Plasma Etching on GaN Thin Films”, 2nd International Conference on Materials for Advanced Technologies and IUMRS, 29 June -4 July 2003, Suntec City, Singapore.

 

4.      L. S. Wang, S. J. Chua, K. Y. Zang, and S. Tripathy, “InGaN Self-organized Quantum Dots Grown By Metalorganic Chemical Vapor Deposition (MOCVD)” Technical Digest of the 5th International Conference on Nitride Semiconductors  (May 25-30, 2003, Nara, Japan), P343. (Tu-P034)

 

5.      K.Y. Zang , S. J. Chua, L.S. Wang and C. Thompson, “Evolution of AlN buffer layer on silicon and effects on the properties of the Epitaxial GaN films” Technical Digest of the 5th International Conference on Nitride Semiconductors  (May 25-30, 2003, Nara, Japan), P199. (Mo-P1.001)

 

 

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