Publication
List for year 2003
Journal
1.
X.C. Wang, G.C. Lim,
H.Y. Zheng, J.L. Tan, W. Liu and S.J. Chua, “Excimer-Laser-Induced
oxidation of GaN epilayer”, Jpn.
J. Appl. Phys., Vol. 42, pp. 5638 – 5641, (2003)
2.
K.Y. Zang, S.J.
Chua, L.S. Wang and C.V. Thompson, “Evolution of AlN buffer layers on
silicon and effects on the properties of epitaxial GaN films”, Phys.
Stat. Sol. (c) , No.7, pp, 2067 – 2071 (2003)
3.
P. Chen, S.J. Chua,
W.D. Wang, D.Z. Chi and Z.L. Miao, “Influence of the polarization on
interfacial properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN
heterojunction metal-insulator-semiconductor structures”, J. of Appl. Phys., Vol. 94, N0. 7, pp.
4702- 4704, 2003
4.
M.A. Rana, T.
Osipowicz, H.W. Choi, M.B.H. Breese and S.J. Chua, “A study of the
material loss and other processes involved during annealing of GaN at growth
temperatures”, Chem. Phys. Letts.,
Vol. 380, pp. 105 -110, (2003)
5.
L. S. Wang, W. H.
Sun and S. J. Chua and Mark Johnson, “Comparative Investigation of
Photoluminescence of In- and Si- doped GaN/AlGaN Multi-Quantum Wells”. Materials Science and Engineering B,
97(2), pp. 196-198 (2003)
6.
Y. Hairong, S. J.
Chua,
7.
Y. Tian, S.J. Chua
and H. Wang. “Theoretical study of characteristics in GaN
metal-semiconductor-metal photodetectors”, Solid-St. Electronics, pp. 1863 – 1867, (2003)
8.
Y. Tian, S.J. Chua
and YX Jin, “Analysis of the detectivity for Triple-layer Heterojunction
GaSb/GaInAsSb infrared detectors”, Microelectronics
J, Vol. 34, pp. 305-312, (2003)
9.
T.L. Song, S.J.
Chua, E.A. Fitzgerald, P. Chen and S. Tripathy, “Strain relaxation in
graded InGaN/GaN epilayers grown on sapphire”, Appl.
Phys. Letts., vol. 83, No. 8, pp. 1545-1547, 2003
10.
W. Liu, S. J. Chua,
X.H. Zhang and J. Zhang, “Effect of High Temperature and Interface
Treatments on Photolumnescence from InGaN/GaN Multiple Quantum Wells with Green
Light Emission” Appl. Phys. Letts.
Vol. 83. No. 5, pp. 914 -916, (2003)
11.
B. J Li, S. J. Chua
and E.A. Fitzgerald, “Theoretical analysis of Si1-x-yGexCy
near-infrared photodetectors, Optical
Engineering, Vol. 42, No. 7, pp. 1993-1999, 2003
12.
J.R. Dong, J. H. Teng,
S. J. Chua, Y. J. Wang, B.C. Foo, H. R. Yuan and S Yuan, “High quality
AlGaInP epilayers grown by MOCVD using TBP for red lasers”, J. Crystal Growth, Vol. 253, pp. 161 - 166. (2003)
13.
J.R. Dong, J. H.
Teng, S. J. Chua, B. C. Foo, Y. J. Wang, H. R. Yuan and S Yuan, “650 nm
AlGaInP multiple quantum well lasers grown by metalorganic chemical vapor
deposition using tertiarybutylphosphine”, Appl Phys. Letts. Vol. 83, No. 4, pp. 596 -598, (2003)
14.
C. Y. Liu, S. Yuan,
J. R. Dong and S. J. Chua, M. C. Y. Chan, S. Z. Wang,
Temperature-dependent Photoluminescence of GaInP/AlGaInP Multiple Quantum Well
Laser Structure Grown by Metalorganic Chemical Vapor Deposition with
Tertiarybutylarsine and Tertiarybutylphosphine”, J. Appl. Phys., Vol 94 No 5, pp 2962-2967, (2003)
15.
R.D Yang, S
Tripathy, FEH Tay, LM Gan and SJ Chua, “Photoluminescence and micro-Ramam
scattering in Mn-doped ZnS nanocrystalline semiconductors”, J. Vac. Sci. Technol. Vol. B 21(3), pp.
984 – 988, (2003)
16.
B. J. Li, S. J.
Chua, Y Nikolai, L. S. Wang and E. K. Sia, “Properties of Schottky
contact of Titanium on low doped p-type SiGeC alloy by rapid thermal annealing,
Solid St. Electron., Vol. 47, pp.
602 -605, (2003)
17.
P. Chen, S. J. Chua,
and Z. L. Miao, Photoluminescence of InGaN/GaN multiple quantum wells
originating from complete phase separation, J. Appl. Phys., Vol 93, No
5, pp. 2507-2511, (2003)
18.
Su Lu, Qu-Li
Fan, Soo-Jin Chua and Wei Huang, “Synthesis of conjugated-ionic
block copolymers by controlled radical polymerization”. MacroMolecules, Vol. 36, pp. 304 -310,
(2003)
19.
L. Ke, K.R. Zhang,
N. Yakovlev, S. J. Chua and P. Chen "Secondary ion mass spectroscopy study
of failure mechanism in organic light emitting devices", Materials Science and Engineering B, Vol.
97, pp. 1-4, (2003)
20.
M.A. Rana, H. W.
Choi, M. B .H. Breese, T. Osipowicz, S. J. Chua and F. Watt, “A study of
the decomposition of GaN during annealing over a wide range of
temperatures”, Mat. Re. Soc. Symp.
Proc. Vol. 742, pp. L11.28.1 - L11.28.6 (2003)
21.
M. A. Rana, T.
Osipowicz, H. W. Choi, M. B. H. Breese, F. Watt and S. J. Chua,
“Stoichiometric and structural alterations in GaN thin films during
annealing”, Appl. Phys. A. (Mtls. Sci. and Processing),
Vol. 76, pp. 103 – 108, (2003)
Conferences
1.
C.B. Soh, J. Zhang,
D.Z. Chi, S.J. Chua, H.F. Lim and R.T.P. Lee, “Characterisation of High
quality continuous GaN films grown on Si-doped cracked GaN template”,
2003 MRS Meeting
2.
R.T.P. Lee, D.Z. Chi
and S.J. Chua, “NiSi formation in the Ni(Ti)/SiO2/I
System”, 2003 MRS Meeting
3.
M.A. Rana, T. Osipowicz,
H.W. Choi, M.B.H. Breese, F. Watt and
S.J. Chua, “Effects of Plasma Etching on GaN Thin Films”, 2nd
International Conference on Materials for Advanced Technologies and IUMRS, 29
June -
4.
L. S. Wang, S. J. Chua, K. Y. Zang,
and S. Tripathy, “InGaN Self-organized Quantum Dots Grown By Metalorganic
Chemical Vapor Deposition (MOCVD)” Technical Digest of the 5th
International Conference on Nitride Semiconductors (May 25-30, 2003, Nara, Japan), P343. (Tu-P034)
5.
K.Y. Zang ,
S. J. Chua, L.S. Wang and
C. Thompson, “Evolution of AlN buffer layer on silicon and effects on the
properties of the Epitaxial GaN films” Technical Digest of the 5th
International Conference on Nitride Semiconductors (May 25-30, 2003, Nara, Japan), P199.
(Mo-P1.001)