patents

Intellectual property

Year 1999

1. Chua SJ, Huang W, Pei J and Yu WL,
Blue Electroluminescence Materials for Polymer Light-emitting Diodes, Patent Application No 200002255-9 –A blue light emitting polymer with enhanced stability and purer spectrum

2. Ho CS, Tee KC, Pey KL, Karunasiri RPG, Chua SJ, Lee KH and See KH,
A Method to fabricate Void free epitaxial CoSi2 with Ultra-shallow Junctions for ULSI Applications.

3. Ho CS, Karunasiri RPG, Chua SJ, Pey KL, Lee KH,
“CMOS Gate Architecture for Integration of Salicide Process in Sub 0.1 ?m Devices” USA Patent No: 6,010,954, Granted 4 Jan 2000 – A method for forming gate structures for salicide processes and for making sub-quarter micron gate electrodes with a mushroom gate.

4. Karunasiri RPG and Chua SJ,
Dual band infrared detector using step multi-quantum wells with superlattice barriers, Singapore Patent No 68636, Date granted 21 Mar 2000 – A quantum well photodetector for detection at the dual band of 3-5 ?m and 8-12 ?m wavelengths

5. Wang ZJ and Chua SJ,
A buried hetero-structure InP-based opto-electronic device with native oxidized current blocking layer, Patent filed (9800153-0) – A new communication laser, which can be operated uncooled to 100?C.

6. Zhang X and Chua SJ,
Crystal Growth method for Group-III Nitride and related compound semiconductors, Patent filed (9801054-9) – A new multi-layer buffer on sapphire substrate which improves the optical quality of the GaN grown on it

7. Zhang X and Chua SJ,
Method of fabricating group III Nitride-based semiconductor device, Patent filed (9803670-0) – A method for the growth of GaN on silicon using an amorphous silicon layer as a buffer.

8. Li G and Chua SJ,
Method of selective post-growth tuning of an optical bandgap of a semiconductor hetero-structure and products produced thereof, Patent filing: 16 Nov 98 – A technique for implementing several lasers emitting at different wavelengths from a substrate

9. Wang ZJ and Chua SJ,
Buried Hetero-structure Strip Laser with Native Oxidised Current Blocking Layer, Patent filing – A self-aligned method for the oxidation of an AlInAs layer for defining a current aperture in buried heterostructure laser.

10. Wang BZ and Chua SJ,
A self-organised method for fabrication of highly strained Quantum Wire and Quantum Wire Lasers, Patent filing

11. Wang W, Chua SJ and E Guenther,
Encapsulation of Organic Light Emitting Devices and Displays (OLEDs), Mar 99 (PCT filed in Singapore) – A method for encapsulating flexible OLEDs by hot pressing between roller pin of two PET films.

12. Zhu FR, Chua SJ and E Guenther,
Anode Materials for Organic Light Emitting Devices, July 99 (PCT filed in Singapore) – Sputtering of ITO and IZnO for Anode metallisation in OLED.

13. Encapsulation of a Device, E Guenther, Lim SF, M Auch and Chua SJ, Nov 99
(PCT filed in Singapore)

Year 2000

1. Wang W, Low BL, Kok WC and Chua SJ,
Hermetic encapsulation of organic light-emitting-diode displays sealed with metal solder at low temperatures. Submitted Oct 2000

2. Chua SJ and Teng JH,
Multi-wavelength semiconductor lasers Monolithically Integrated with Couplers and Isolators – Two wavelength laser monolithically integrated with a Y-branch and an isolator. Patent Application No 200003503-0; 21 June 2000.

Year 2001

1.Chi DZ; Rinus Lee TP; Lahiri S and Chua SJ A method of reducing interfacial oxide for nickel silicide formation. Under filing, 28 Dec 01

2.Chua SJ, Li Peng, Hao MS, Zhang Ji, Forming Indium-Nitride (InN) and Indium Gallium Nitride (InGaN) Quantum Dots grown by MOCVD, Under filing, 7 Sept 01.

3.Guenther EKM, Wang W and Chua SJ, Laminates for encapsulating devices – Use of laminates for encapsulating flexible devices. Filing PCT/SG 99/00070, US Patent Application No. 09/786,833. 9 March 2001

4.Ke L, Ramadas SK and Chua SJ, Stable organic light emitting diode – New architecture for OLED will low dark spot formation. Singapore Patent Application Number of 200107343-6 and filing date 28 November 2001.

5.Teng JH, Chua SJ and Dong JR, Spatially Selective Tuning of transition energy level in a semiconductor heterostructure. Filing 13 Oct 01

6. Li BJ and Chua SJ, High Carrier Injection Optical Waveguide Switch – Suitable for 1.3 mm and 1.55 mm wavelength range for 2 inputs and 2 outputs. Filed US PTO 31 July 01

7.Huang W, Xiao Y and Chua SJ, Soluble electroluminescent polymers with tunable optical and electronic properties - Polymer emitting in the red. Singapore Patent Application No. 200104615-0, 3 Aug 01

8.Huang W, Chen ZK and Chua SJ, Light emitting polymers and polymer light emitting diodes. Patent Appl No. 200103801-7, Polymer emitting in the green; 2 July 01.

9.Wang BZ and Chua SJ, A Method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structures, Patent Application No 200007724-8 (6 Aug 2001) – A method for fabricating quantum wires and using it for semiconductor lasers.

10.Wang W, HY Low and Chua SJ, Removal of the Organic Layers of Organic Electronic Devices by UV Light Exposure, - Removal of EL polymer by UV exposure. Patent Application No 200103758-9, Filing Date 20 June 2001

Year 2002

1. Chi DZ, Lee TP and Chua SJ, Method For Forming a Nickel Silicide Layer On a Silicon Substrate

2. ETPL Ref: IMR/P//1012/SG, IMRE Ref: 200202

3. Chi DZ, Lee TP Rinus, Lahiri SK and Chua SJ, Method for Forming a Nickel Silicide Layer on a Silicon Substrate

4. Chua SJ and Li BJ, High carrier injection optical waveguide switch – Suitable for 1.3 mm and 1.55 mm wavelength range for 2 inputs and 2 outputs.

Year 2003

1. Chi DZ, Wei R, Chua SJ, Silicide Process Using Ternary Metal Alloy Films.

2. Ramam A'; Sperring C; Toh S.L; Chua S. J; Tay C. J; Rahman M, Contact pressure sensor and method for manufacturing the same.

3. Ueno M, Takasuka E, Chua SJ and Chen P, GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same

4. Ueno M, Takasuka E, Chua SJ and Chen P, GaN single crystal substrate, nitride semiconductor epitaxial substrate, electronic field emission cathode devices, field emission display device, and methods of manufacturing same.

5. Ueno M, Takasuka E, Chua SJ and Chen P, Gallium Nitride single crystal substrate, nitride-based semiconductor epitaxial substrate, and manufacturing methods thereof.

6. Miao ZL, Chua SJ, Improved Buffer for Semiconductor Structures (Formerly known as InAs Buffer Layer Growth Technology Releasing the Strain Caused by Lattice Mismatch Between High In Composition Epilayers and GaAs Substrate,

Year 2004

1. Teng JH, Chua SJ, Dong JR, Distributed feedback and distributed Bragg reflector semiconductor laser with dielectric grating"

2. Yin R, Chua S.J. Teng J.H. 5-layer multimode interference coupler"

3. Chua SJ, Kumar S and He XB, "High Sensitivity Gas Permeation Measurement System

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