IAS/PELS Singapore held workshop at STAR on wide bandgap semiconductor and application

On 12th November 2018, the IEEE Industrial Application Society/Power Electronics Society (IAS/PELS) Singapore Chapter held a technical talk at the Satellite Technology And Research Centre on wide bandgap semiconductor and application. This event was organized in collaboration with Institute of Engineers Singapore (IES) Semiconductor & IC Design Sub-Committee (SICD SC) of the Electronics and Computer Engineering Technical Committee (ECETC).

There were a total of 4 presenters to share on the different topics related to wide bandgap power devices. Assistant Professor Xin Zhang from the School of Electrical and Electronic Engineering, Nanyang Technological University first gave a presentation on current imbalance in Silicon Carbide (SiC) MOSFETs connected in parallel and approaches to mitigate the problem. This is followed by Mr. Ban How Sin from Panasonic Semiconductor Solutions who share on semiconductor technologies to ensure reliability of the Gate Injection Transistor GaN. Finally, Professor Kay Soon Low and Dr. Bingyin Kang from the Satellite Technology And Research Centre (STAR) presented on application of GaN power transistors in power supplies for satellites.

The workshop lasted for four hours, which includes a Question and Answer (Q&A) session as well as a lab tour of STAR.