PUBLICATIONS
& PATENTS
SELECTED
PUBLICATIONS
1. W.K.
Chim, SE Leang and D.S.H. Chan, “Extraction of Metal-Oxide-Semiconductor
Field-Effect-Transistor Interface State and Trapped Charge Spatial Distributions
Using A Physics-Based Algorithm”, J. Appl. Phys., vol. 81, no. 4, pp.
1992-2001, 1997.
2.
C.L. Lou, W.K. Chim, D.S.H. Chan and Y. Pan, “A Novel
Single-Device DC Method for Extraction of the Effective Channel Mobility and
Source-Drain Resistances of Fresh and Hot-Carrier Degraded Drain-Engineered
MOSFETs”, IEEE Trans. Electron Devices, vol. 45, no. 6, pp. 1317-1323,
1998.
3. W.K. Choi, W.K. Chim, C.L. Heng, L.W. Teo, V. Ho, V. Ng ,
D.A. Antoniadis and E.A. Fitzgerald, “Observation of memory effect in germanium
nanocrystals embedded in an amorphous silicon oxide matrix of a
metal-insulator-semiconductor structure”, Appl. Phys. Lett.,
vol. 80, no. 11, pp. 2014-2016, 2002.
4. L.W. Teo, W.K. Choi,
W.K. Chim, V. Ho, C.H. Moey, M.S. Tay, C.L. Heng, Y. Lei, D.A. Antoniadis and
E.A. Fitzgerald “Size control and charge storage mechanism of germanium
nanocrystals in a metal-insulator-semiconductor structure", Appl. Phys. Lett.,
vol. 81, no. 19, pp.3639-3641, 2002.
5. W.K. Chim, T.H. Ng, B.H. Koh, W.K. Choi, J.X. Zheng, C.H.
Tung and A.Y. Du, “Interfacial and bulk properties of zirconium dioxide as a
gate dielectric in metal-insulator-semiconductor structures and current
transport mechanisms”, J. Appl. Phys., vol. 93, no. 8, pp.4788-4793,
2003.
6. W.K. Chim, K.M. Wong, Y.T. Yeow, Y.D. Hong, Y. Lei, L.W. Teo and W.K.
Choi, “Monitoring oxide quality using the spread of the dC/dV peak in scanning
capacitance microscopy measurements”, IEEE Electron Device
Lett., vol. 24, no. 10, pp.
667-670, 2003.
7. E.W.H. Kan, W.K. Choi, W.K. Chim, E.A. Fitzgerald and
D.A. Antoniadis, “Origin of charge trapping in germanium nanocrystal embedded
SiO2 system: Role of interfacial traps?”, J. Appl. Phys., vol.
95, no. 6, pp.3148-3152, 2004.
8. Y.N. Tan, W.K. Chim, B.J. Choi and W.K. Choi, “Over-erase
phenomenon in SONOS-type Flash memory and its minimization using a hafnium oxide charge storage
layer”, IEEE Trans. Electron Devices, vol.
51, no. 7, pp. 1143-1147, 2004.
9. B.H. Koh,
E.W.H. Kan,
W.K. Chim, W.K. Choi, D.A. Antoniadis and E.A. Fitzgerald, "Traps in germanium
nanocrystal memory and effect on charge retention: Modeling and experimental
measurements”, J. Appl. Phys., vol. 97, no. 12, article no. 124305, pp.124305-1 to 124305-9,
2005.
10. Y. Lei and W.K. Chim, “Highly ordered arrays of metal/semiconductor
core-shell nanoparticles with tunable nanostructures and photoluminescence”, Journal of the American Chemical Society,
vol. 127, no. 5, pp. 1487-1492, 2005.
11. J.X. Zheng, G. Ceder,
T. Maxisch, W.K. Chim and W.K. Choi, “Native point defects in yttria
and relevance to its use as a high-dielectric-constant gate oxide material: a
first-principles study”, Physical Review B, vol. 73, no. 1, article no.
104101, pp.104101-1 to 104101-7, 2006.
12.
Y.N. Tan, W.K. Chim, W.K. Choi, M.S. Joo and B.J. Cho, “Hafnium
Aluminum Oxide as Charge Storage and Blocking Oxide Layers in SONOS-type
Nonvolatile Memory for High Speed Operation”,
IEEE Trans. Electron Devices,
vol. 53, no. 4, pp. 654-662, 2006.
13. J.X. Zheng, G. Ceder, T. Maxisch,
W.K. Chim and W.K. Choi,
“First-principles study of native point defects in hafnia and zirconia”, Physical Review B,
vol. 75, no. 10, article no. 1041112, pp. 104112-1 to
104112-7, 2007.
14. K.M. Wong,
W.K. Chim, K.W. Ang and Y.C. Yeo, “Spatial
distribution of interface trap density in strained channel transistors using the
spread of the differential capacitance characteristics in scanning capacitance
microscopy measurements”, Appl. Phys. Lett., vol. 90, no. 15, article
no. 153507, pp.153507-1 to 153507-3, 2007.
15. K.M. Wong
and W.K. Chim, “Deep-depletion physics-based analytical model for
scanning capacitance microscopy carrier profile extraction”, Appl. Phys. Lett.,
vol. 91, no. 1, article no. 013510, pp.013510-1 to 013510-3, 2007.
16. K.M.
Wong, W.K. Chim, J.Q. Huang and L. Zhu, “Scanning capacitance microscopy
detection of charge trapping in free-standing germanium nanodots and the
passivation of hole trap sites”, J. Appl. Phys.,
vol. 103, no. 5, article no. 054505, pp.054505-1 to
054505-5, 2008.
17. S.Y. Chiam, W.K.
Chim, C. Pi, A.C.H. Huan, S.J. Wang, J.S. Pan, S. Turner and J. Zhang, “Band
alignment of yttrium oxide on various relaxed and strained semiconductor
substrates”, J. Appl. Phys., vol. 103, no. 8, article no. 083702, pp.083702-1 to
083702‑12, 2008.
18. J.Q.
Huang, W.K. Chim, S.J. Wang, S.Y. Chiam and L.M. Wong, “From
germanium nanowires to germanium-silicon-oxide oxide nanotubes: Influence of
germanium tetraiodide precursor”,
Nano Letters, vol. 9, no. 2, pp. 583-589, 2009 [Highlighted
at the Nature Publishing Group Asia Materials website on 15 April 2009.]
19. J.Q. Huang, S.Y. Chiam, W.K. Chim, L.M. Wong and S.J. Wang,
“Heterostructures of germanium nanowires and germanium-silicon
oxide nanotubes and growth mechanisms”,
Nanotechnology, vol. 20, no. 42, article no. 425604, pp. 425604-1 to
425604-8, 2009.
20.
C. Pi, Y. Ren and W. K. Chim, “Investigation of bipolar resistive
switching and the time-dependent SET process in silver-sulfide/silver thin
films and nanowire array structures”,
Nanotechnology,
vol. 21,
no. 8, article no. 085709, pp. 085709-1 to 085709-8,
2010.
21. J.Q. Huang,
S.Y. Chiam, H.H. Tan, S.J. Wang and W.K. Chim, “Fabrication of silicon nanowires
with precise diameter control using metal nanodot arrays as a hard mask blocking
material in chemical etching”, Chemistry of Materials,
vol. 22, no.
13, pp. 4111-4116, 2010.
22. Y. Ren, W.K. Chim,
S.Y. Chiam, J.Q. Huang, C. Pi and J.S. Pan,
“Formation of nickel oxide nanotubes with uniform wall thickness
by low-temperature thermal oxidation through
understanding the
limiting effect of vacancy diffusion and the Kirkendall phenomenon”, Advanced Functional Materials,
vol. 20, no. 19, pp. 3336-3342, 2010.
23.
Y. Ren, S.Y. Chiam and W.K. Chim, “Diameter dependence of the void formation in
the oxidation of nickel nanowires”, Nanotechnology, vol. 22, no. 23,
article no. 235606, pp. 235606-1 to 235606-6, 2011.
24. Z.Q. Liu,
W.K. Chim, S.Y. Chiam, J.S. Pan and C.M. Ng, “Ambiguity in the magnitude and
direction of the derived interface dipole in lanthanum aluminate
heterostructures: Implications and proposed solution”, J. Appl. Phys,
vol. 109, no. 9, article no. 093701, pp. 093701-1 to 093701-8, 2011.
25. Z.Q. Liu,
W.K. Chim, S.Y. Chiam, J.S. Pan and C.M. Ng, “Evaluating the use of
electronegativity in band alignment models through the experimental slope
parameter obtained from band offsets of lanthanum aluminate heterostructures”,
J. Appl. Phys., vol. 110, no. 9, article no. 093701, 2011.
26.
C. Pi, Y. Ren, Z.Q.
Liu and W.K. Chim, “Unipolar memristive switching in yttrium oxide and RESET
current reduction using a yttrium interlayer”, Electrochemical and
Solid-State Letters, vol. 15, no. 3, pp. G5-G7, 2012.
Book PUBLISHED
W.K. Chim, "Semiconductor Device and
Failure Analysis Using Photon Emission Microscopy", Chichester: John Wiley &
Sons Ltd., 269 pages, 2000. (ISBN 0-471-49240X)
PATENTS
[P1]
W.K. Chim, J.C.H. Phang and D.S.H. Chan, "Method and Apparatus for Measuring
Quantitative Voltage Contrast", U.S. Patent No.: 5,486,769 (23 January
1996), Singapore Patent No.: 32423 (18 October 1996).
[P2]
J.C.H. Phang, W.K. Chim, D.S.H. Chan and Y.Y. Liu, "A Retractable
Cathodoluminescence Detector with High Ellipticity and High Backscattered
Electron Rejection Performance for Large Area Specimens", U.S. Patent
No.: 5,569,920 (29 October 1996),
Singapore Patent No.: 9500154-1 (6 September 1995).
[P3]
W.K. Chim, D.S.H. Chan, J.C.H.
Phang, J.M. Tao and Y.Y. Liu, "Integrated Emission Microscope for
Panchromatic Imaging, Continuous Wavelength Spectroscopy and Selective Area
Spectroscopic Mapping",
U.S. Patent
No.: 5,724,131 (3 March 1998), Singapore
Patent No.: 9500492-5 (22 May 1995).
[P4] C.C. Hu, K.L. Pey, Y.F.
Chong, W.K. Chim, P. Neuzil and C. Lap, "Incorporation of Dielectric Layer
onto SThM Tips for Direct Thermal Analysis", U.S. Patent No.: 6,566,650 (20
May 2003).
[P5]
W.K. Choi, W,K. Chim, V. Ng
and L. Chan, “Nanocrystal Flash Memory Device and Manufacturing Method
Therefor”, Patent filed in U.S., Japan, Europe and Taiwan (Application No.
60/348,072 dated 19 October 2001). European patent granted on 13 Dec 2002
(Application/Patent No. 02256661.6), U.S. Patent No.: 6,656,792 (2 December
2003)
[P6] W.K. Choi, W,K. Chim, V. Ng
and L. Chan, “Nanocrystal Flash Memory Device and Manufacturing Method
Therefor”, Patent filed in Japan (Application No.
290134/2002
dated 2 October 2002).
[P7] W.K. Choi, W,K. Chim, V. Ng
and L. Chan, “Nanocrystal Flash Memory Device and Manufacturing Method
Therefor”, European patent granted on 13 Dec 2002 (Application/Patent No.
02256661.6).
[P8] V. Ho, W.K. Choi, L. Chan,
W.K. Chim, V. Ng, C.L. Heng and L.W. Teo, “Process to Manufacture
Nonvolatile MOS Memory Device”, U.S. Patent 6,962,850 (8 November 2005).
[P9]
Y.N. Tan, W.K. Chim, B.J. Cho and W.K. Choi, “Memory Gate Stack
Structure”,
International Patent (Application No.: PCT/SG2004/000050) filed on 11 March
2004 (ETPL Ref: SRC/P//1760/PCT). International Publication Number WO
2005/088727 A1 published on 22 September 2005. U.S. Patent Application
Number 10/592,632 filed
on 11 Sep 2006 (Accorded Filing Date: 11 Mar 2004).
Singapore
Patent No.: 125517 [WO 2005/088727] (31 Oct 2008).
6 U.S., 1 European and
4
Singapore patents granted. 1 PCT Patent and 1 U.S.
Patent
and 1 Japanese Patent
filed. Technologies in patents [P2] to [P3] have been licensed to
industry and have led to commercial products.
|