► Top Surface Aluminized & Nitrided HfAlO/ HfO2 Stack [2004]
  ► MOSFET with HfTaO Gate Dielectric [2004]
  ► Substituted Al for Replacement of PolySi Gate [2004]
  ► PtxSi Replacing PolySi Gate for pMOSFET [2004]
  ► Work Function Tuning of TaN by Incorporating Lanthanide [2004]
  ► Development of Metal Gate/ High-k Gate Stacks Etching Process [2004]
  ► Low Temperature Plasma Nitridation for Removal of Hf-based High-k Gate Dielectrics [2004]
  ► Plasma PH3 Passivation TaN/ HfO2/ Ge-sub Stack [2004]
  ► A New Surface Passivation for Ge pMOSFET with HfO2 Gate Dielectric [2004]
  ► Negative-U Traps in HfO2 Gate Dielectrics and Frequency Dependency of Dynamic BTI in MOSFETs [2004]
  ► Surface Roughness and UTB MOSFETs Design [2004]
  ► Enhanced Performance in 50nm N-MOSFETS [2004]
  ► Fin Tapering Optimization & Fabrication [2004]
  ► Advanced Process for Dual Metal Gate CMOS [2004]
  ► Germanium MOSFETs with high-K dielectrics - for high mobility transistors [2004]
  ► Ballistic Current in Double Gate Ultra-thin Body Ge Transistors  [2004]
  ► Dynamic NBTI of P-MOSFET in CMOS inverter  [2004]
  ► High-K MIM Capacitors [2003-2004]
  ► High-K Quantum Dots Flash Memory Devices [2003-2004]
 

► Strained-Channel Transistor Strain Engineering to Improve Speed [2004-2005]
   
   
  SNDL is developing scientific and technological bases for solving the most critical needs for CMOS front-end technology, RF-IC process, and nano technology.

 
  Front-End Technology Research - focusing on 50 nm CMOS and beyond
 



►High-K gate dielectrics
►Dual-metal gate electrodes
►Gate stack etching
►New junction technology
►High mobility materials
►New Device structures
►Modeling, simulation, reliability
GOAL: Develop a scientific and technological base for solving the most critical needs for front-end technology that are required for sub-50 nm CMOS transistors
 
 
  On-Chip High-K MIM Capacitors for RF ICs
 
 
 
Research Focus
►Develop low temp high-K MIM process ►compatible with Cu/low-K BEOL
►Modeling and circuit design for Analog/RF ICs
 
 
  Quantum Dots (QD) High-K Flash Memory
 



 
Advantages
►Low Power
►High Speed
►Long Data Retention
►High Density
►Scalable Tunnel Oxide Thickness
 
 
    New Projects in 2005
  • Development of high mobility channel layer formation technology for high speed CMOS devices
 
    New Projects in 2004
  • Nanoscale Transistors with Enhanced Performance for CMOS Manufacturing
  • Development of Semiconductor Nanowire CMOSFET for sub-45nm technologySi/Ge Nanowire FET with High-K Gate Dielectrics and Metal Electrode
  • Non-volatile Molecular and Polymer Memory for Flash Memory in Silicon IC Applications
 

• Physical Modeling and Simulation of Nano-Scale Electronic Device Phenomena