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SNDL's
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Conferences /
Invited |
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Authors |
Title |
Journal |
Volume |
|
|
|
|
2007 |
W.S. Hwang, B.J. Cho, D.S.
Chan, S. Lee, and W.J. Yoo |
Effects of volatility of etch
by products on surface roughness during the etching of metal gates in
Cl2 |
to appear in Journal of
Electrochemical Society |
2008 |
|
R. T. P. Lee, L.-T. Yang,
T.-Y. Liow, K.-M. Tan, A. E.-J. Lim, K.-W. Ang, D. M. Y. Lai, K. M. Hoe,
G.-Q. Lo, G. S. Samudra, D. Z. Chi, and Y.-C. Yeo |
Nickel-silicide:carbon contact
technology for n-channel MOSFETs with silicon-carbon source/drain |
to appear in IEEE Electron
Device Letters |
vol. 29, no. 1, Jan. 2008 |
|
T.-Y. Liow, K.-M. Tan, R. T.
P. Lee, M. Zhu, K.-M. Hoe, G. S. Samudra, N. Balasubramanian, and Y.-C.
Yeo |
Spacer removal technique for
boosting strain in n-channel FinFETs with silicon-carbon source and
drain stressors |
to appear in IEEE Electron
Device Letters |
2008 |
|
G. H. Wang, E.-H. Toh, A. Du,
G.-Q. Lo, G. Samudra, and Y.-C. Yeo |
Strained
silicon-germanium-on-insulator N-MOSFET with embedded silicon source and
drain stressors |
to appear in IEEE Electron
Device Letters |
2008 |
|
G. H. Wang, E.-H. Toh, X.
Wang, S. Tripathy, T. Osipowicz, T. K. Chan, K.-M. Hoe, S. Balakumar,
G.-Q. Lo, G. Samudra, and Y.-C. Yeo, |
Strained SiGeSn formed by Sn
implant into SiGe and pulsed laser annealing |
Applied Physics Letters |
vol. 91, 2007 |
|
A. E.-J. Lim, W.-W. Fang, F.
Liu, R. T. P. Lee, G. Samudra, D.-L. Kwong, and Y.-C. Yeo |
Impact of interfacial dipole
on effective work function of nickel fully-silicided gate electrodes
formed on rare-earth based dielectric interlayers |
Applied Physics Letters |
vol. 91, 2007 |
|
H.-S. Wong, L. Chan, G.
Samudra, and Y.-C. Yeo |
Effective Schottky barrier
height reduction using sulfur and selenium at the NiSi/n-Si (100)
interface for low resistance contacts |
IEEE Electron Device
Letters |
vol. 28, no. 12, Dec. 2007 |
|
T.-Y. Liow, K.-M. Tan, R. T.
P. Lee, C.-H. Tung, G. S. Samudra, N. Balasubramanian, and Y.-C. Yeo |
N-channel (110)-sidewall
strained FinFETs with silicon-carbon source and drain stressors and
tensile capping layer |
IEEE Electron Device
Letters |
vol. 28, no. 11, Nov. 2007 |
|
K.-W. Ang, C. Wan, N.
Balasubramanian, G. S. Samudra, and Y.-C. Yeo |
Hot carrier effects in
strained n-channel transistor with silicon-carbon source/drain stressors
and its orientation dependence |
IEEE Electron Device
Letters |
vol. 28, no. 11, Nov. 2007 |
|
M. Zhu, H.-C. Chin, G. Samudra,
and Y.-C. Yeo |
Fabrication of P-MOSFETs on
germanium epitaxially grown on gallium arsenide substrate by chemical
vapor deposition |
to appear in J.
Electrochemical Society |
2008 |
|
F. Liu, K.-M. Tan, X. Wang, D.
K. Y. Low, D. M. Y. Lai, P. C. Lim, G. Samudra, and Y.-C. Yeo |
Incorporation of tin in
boron-doped silicon for reduced deactivation of boron during
post-laser-anneal rapid thermal processing |
to appear in J. Applied
Physics |
2007 |
|
P.-J. Chia, L.-L. Chua, S.
Sivaramakrishnan, J.-M. Zhuo, L.-H. Zhao, W.-S. Sim, Y.-C. Yeo, and P.
K.-H. Ho |
Injection-induced de-doping in
a conducting polymer during device operation: Asymmetry in the hole
injection and extraction rates |
to appear in Advanced
Materials |
2007 |
|
X. P. Wang, A. Lim, M.-F. Li,
C. Ren, W. Y. Loh, C. X. Zhu, A. Chin, A. D. Trigg, Y.-C. Yeo, S.
Biesemanns, G. Q. Lo, and D.-L. Kwong |
Work function tunability of
refractory metal nitrides by lanthanum or aluminum doping for advanced
CMOS devices |
to appear in IEEE Trans.
Electron Devices |
vol. 54, 2007 |
|
K.-W. Ang, K.-J. Chui, C.-H.
Tung, N. Balasubramanian, G. S. Samudra, and Y.-C. Yeo |
Performance enhancement in
uniaxial strained silicon-on-insulator N-MOSFETs featuring
silicon-carbon source/drain regions |
to appear in IEEE Trans.
Electron Devices |
vol. 54, no. 11, Nov. 2007 |
|
Hoon Jung Oh, Kyu Jin Choi, Wei Yip Loh,
Thwin Htoo, Soo Jin Chua, Byung Jin Cho |
Integration of GaAs epitaxial layer to
Si-based substrate using Ge condensation and low-temperature migration
enhanced epitaxy techniques |
Journal of Applied Physics,
|
Vol.102, No.5, 054306 (2007) |
|
K.-M. Tan, T.-Y. Liow, R. T. P. Lee, K. M. Hoe, C.-H. Tung, N.
Balasubramanian, G. S. Samudra, and Y.-C. Yeo |
Strained p-channel FinFETs
with extended Π-shaped silicon-germanium source and drain stressors |
IEEE Electron Device
Letters |
vol. 28, no. 10, pp. 905-908, Oct.
2007. |
|
E.-H. Toh, G. H. Wang, L.
Chan, G.-Q. Lo, G. Samudra, and Y.-C. Yeo |
Strain and materials
engineering of the I-MOS transistor with an elevated impact-ionization
region |
IEEE Trans. Electron Devices |
vol. 54, no. 10, pp. 2778-2785,
Oct. 2007 |
|
J. Chen, X. P. Wang, M.-F. Li,
S. J. Lee, M. B. Yu, C. Shen, and Y.-C. Yeo |
NMOS compatible work function
of TaN metal gate with erbium oxide doped hafnium oxide gate dielectric |
IEEE Electron
Device Letters |
vol. 28, no. 10, pp. 862-864, Oct.
2007 |
|
K.-W. Ang, H.-C. Chin, K.-J.
Chui, M.-F. Li, G. S. Samudra, and Y.-C. Yeo |
Carrier backscattering
characteristics of strained silicon-on-insulator N-MOSFETs featuring
silicon-carbon source/drain regions |
to appear in Solid State
Electronics |
2007 |
|
Y. Q. Wang , W. S. Hwang, D. Y. Gao, G. Samudra, Y.-C. Yeo, and W. J.
Yoo |
Electrical characteristics of
memory devices with high-k HfO2 trapping layer and double tunneling
layer Si3N4/SiO2 |
IEEE Trans.
Electron Devices |
vol. 54, no. 10, pp. 2699-2705,
Oct. 2007 |
|
H.-S. Wong, L. Chan, G.
Samudra, and Y.-C. Yeo |
Sub-0.1 eV effective Schottky
barrier height for NiSi on n-type Si (100) using antimony segregation |
IEEE Electron Device
Letters |
vol. 28, no. 8, pp. 703-705, Aug.
2007 |
|
M. Zhu, H.-C. Chin, C.-H.
Tung, and Y.-C. Yeo |
In-situ silane passivation of
gallium arsenide and deposition of high-permittivity gate dielectric for
metal-oxide-semiconductor applications |
to appear in J.
Electrochemical Society |
vol. 154, no. 10, pp. H879-H882,
Oct. 2007 |
|
K.-W.
Ang, C.-H. Tung, N. Balasubramanian, G. S. Samudra, and Y.-C. Yeo |
Strained n-channel transistors
with silicon source and drain regions and embedded silicon-germanium as
strain-transfer-structure |
Electron Device Letters |
vol. 28, Jul.
2007 |
Wan
Sik Hwang,
Byung-Jin Cho, Daniel S. H. Chan, Won Jong Yoo
|
Low Energy N2 Ion
Bombardment for the Removal of (HfO2)x(SiON)1-x
in Dilute HF |
J. Vac. Sci. Technol A |
Jul/Aug (2007) |
|
A.
E.-J. Lim, R. T. P. Lee, X. P. Wang, W. S. Hwang, C. H. Tung, G. S.
Samudra, D.-L. Kwong, and Y.-C. Yeo |
Yttrium- and terbium-based
interlayer on SiO2 and HfO2 gate dielectrics for work function
modulation of nickel fully-silicided gate in NMOSFETs |
Electron Device Letters |
vol. 28, no. 6,
Jun. 2007 |
|
K.-W.
Ang, K.-J. Chui, A. Madan, Y. Wang, L.-Y. Wong, C.-H. Tung, N.
Balasubramanian, M. F. Li, G. S. Samudra, and Y.-C. Yeo |
Strained P-MOSFET with
condensed silicon-germanium source/drain on thin body SOI substrate for
enhanced drive current performance |
Electron Device Letters |
vol. 28, no. 6, Jun. 2007 |
|
R. T.-P.
Lee, K.-M. Tan, T.-Y. Liow, C.-S. Ho, S. Tripathy, G. S. Samudra, D.-Z.
Chi, and Y.-C. Yeo |
Probing the ErSi1.7 Phase Formation by Micro-Raman
Spectroscopy |
J. Electrochemical Society |
vol. 154, no. 5,
pp. May 2007. |
|
K. M. Wong, W. K. Chim, K. W.
Ang, and Y.-C. Yeo |
Spatial distribution of
interface trap density in strained channel transistors using the spread
of the differential capacitance characteristics in scanning capacitance
microscopy measurements |
Applied Physics Letters |
vol. 90, 153507,
Apr. 2007 |
|
A. E.-J.
Lim, W. S. Hwang, X. P. Wang, D. M. Y. Lai, G. S. Samudra, D.-L. Kwong,
and Y.-C. Yeo |
Metal gate work function
modulation using Hf alloys obtained by interdiffusion of thin metallic
layers |
J. Electrochemical Society |
vol. 154, no. 4,
Apr. 2007 |
|
G. H. Wang, E.-H. Toh, C.-H.
Tung, A. Du, G.-Q. Lo, G. Samudra, and Y.-C. Yeo |
Strained
silicon-germanium-on-insulator n-channel transistor with silicon source
and drain regions for performance enhancement |
Japanese Journal of Applied
Physics |
vol. 46, no. 4B, Apr. 2007 |
|
K.-M. Tan, T.-Y. Liow, R. T.
P. Lee, K.-J. Chui, C.-H. Tung, N.Bala, G. S. Samudra, W.-J. Yoo, Y.-C.
Yeo |
Sub-30 nm Strained P-Channel
FinFETs with Condensed SiGe Source/Drain Stressors |
Japanese Journal of Applied
Physics |
vol. 46, no. 4B, Apr. 2007 |
|
K.-W. Ang, K.-J. Chui, C.-H.
Tung, N. Balasubramanian, M.-F. Li, G. S. Samudra, and Y.-C. Yeo |
Enhanced strain effects in 25
nm gate length thin-body N-MOSFETs with silicon-carbon source/drain and
tensile stress liner |
Electron Device Letters |
vol. 28, no. 4,
Apr. 2007 |
|
X. P. Wang, H. Y. Yu, M.-F.
Li, C. X. Zhu, S. Biesemans, A. Chin, Y. Y. Sun, Y. P. Feng, A. Lim,
Y.-C. Yeo, W. Y. Loh, P. Lo, and D.-L. Kwong |
Wide Vfb and Vth
tunability for metal gated MOS devices with HfLaO gate dielectrics |
Electron Device Letters |
vol. 28, no. 4,
Apr. 2007 |
|
S. Sivaramakrishnan, P.-J.
Chia, Y.-C. Yeo, L.-L. Chua, and P. K.-H. Ho |
Controlled insulator-to-metal
transformation in printable polymer composites with nanometal clusters |
Nature
Materials |
vol. 6, Feb.
2007. |
|
R. T. P. Lee, Andy E.-J. Lim,
K.-M. Tan, T.-Y. Liow, G.-Q. Lo, G. S. Samudra, D. Z. Chi, and Y.-C. Yeo |
N-channel FinFETs with 25 nm
gate length and Schottky-barrier source and drain featuring ytterbium
silicide |
Electron Device Letters |
vol. 28, no. 2,
Feb. 2007 |
|
K.-J. Chui, K.-W. Ang, N.
Balasubramanian, M.-F. Li, G. Samudra, and Y.-C. Yeo |
N-MOSFET with silicon-carbon
source/drain for enhancement of carrier transport |
IEEE
Trans. Electron Devices |
vol. 54, no. 2,
Feb. 2007 |
|
Y.-C. Yeo |
Enhancing CMOS transistor
performance using lattice-mismatched materials in source/drain regions
|
Semiconductor Science and Technology |
vol. 22, Jan.
2007 |
|
E.-H. Toh, G. H. Wang, G.-Q.
Lo, L. Chan, G. Samudra, and Y.-C. Yeo |
Performance enhancement of
n-channel impact-ionization MOS (I-MOS) transistor by strain engineering |
Applied
Physics Letters |
vol. 90, no. 2,
Jan. 2007 |
|
|
|
|
2006 |
|
Wan Sik Hwang,
Byung-Jin Cho, Daniel S. H. Chan, Vladimir Bliznetsov, and Won Jong Yoo |
Effects of SiO2/Si3N4
Hard Masks on Etching Properties of Metal Gates |
J. Vac. Sci.
Technol. B |
24, 2689
(2006) |
|
K.-J. Chui, K.-W. Ang, H.-C.
Chin, C. Shen, L.-Y. Wong, C.-H. Tung, N. Balasubramanian, M. F. Li, G.
S. Samudra, and Y.-C. Yeo |
Strained silicon-on-insulator
n-channel transistor with silicon-carbon source/drain regions for
carrier transport enhancement |
Electron Device Letters |
vol. 27, no. 9,2006 |
|
K.-M. Tan, T.-Y. Liow, R. T.-P. Lee, C.-H. Tung, G. S. Samudra, W.-J.
Yoo, and Y.-C. Yeo |
Drive current enhancement in
FinFETs using gate-induced stress |
Electron Device Letters |
vol. 27, no. 9, 2006 |
|
G. H. Wang, E.-H. Toh, Y.-L.
Lim, C.-H. Tung, S.-F. Choy, G. S. Samudra, and Y.-C. Yeo |
High quality
silicon-germanium-on-insulator wafers fabricated using cyclical thermal
oxidation and annealing |
Applied Physics Letters |
vol. 89, 053109, Aug. 2006 |
|
Nan Wu, Qingchun Zhang, Chan
D.S.H, Balasubramanian N, Chunxiang Zhu |
Gate-first Germanium nMOSFET with CVD
HfO2 gate dielectric and silicon surface passivation |
Electron Device Letters |
vol. 27, no. 6, pp. 479-481, June
2006 |
|
Rui Li, Lee, S.J, Yao H.B, Chi
D.Z., Yu M.B, D.-L Kwong |
Pt-Germanide Schottky source/drain
Germanium p-MOSFET with HfO2 gate dielectric and TaN gate
electrode |
Electron Device Letters |
vol. 27, no. 6, pp. 476-478, June
2006 |
|
C. Shen, M.-F. Li, X. P. Wang,
Y.-C. Yeo, and D.-L. Kwong |
A fast measurement technique
of MOSFET Id-Vg characteristics |
Electron Device Letters |
vol. 27, no. 1, pp. 55-57, Jan.
2006 |
|
|
|
|
2005 |
|
T.-Y. Liow, K.-M. Tan,
Y.-C. Yeo, A. Agarwal, A. Du, C.-H. Tung, N. Balasubramanian |
Investigation of
silicon-germanium fins fabricated using germanium condensation on
vertical compliant structures |
Applied Physics Letters |
vol. 87, no. 26, 262104, Dec. 2005 |
|
T. Yang, C. Shen,
M. F. Li, C. H. Ang, C. X. Zhu, Y.-C. Yeo, G. Samudra, S. C. Rustagi, M.
B. Yu, and D. L. Kwong |
Fast dynamic NBTI components
in p-MOSFET with SiON dielectric |
Electron Device Letters |
vol. 26, no. 11, pp. 826-828, Nov.
2005 |
|
A. E. J. Lim, R.
T. P. Lee, C. H. Tung, S. Tripathy, D.-L. Kwong, and Y.-C. Yeo |
Full silicidation of silicon
gate electrode using nickel-terbium alloy for MOSFET applications |
J. Electrochemical Society |
vol. 153, no. 4, pp. G337-G340,
2006 |
|
C.
Ren, D. S. H. Chan, X. P. Wang, B. B. Faizhal, M.-F. Li, Y.-C. Yeo, A.
D. Trigg, A. Agarwal, N. Balasubramanian, J. S. Pan, P. C. Lim, A. C. H.
Huan, and D.-L. Kwong |
Electrical and physical
properties of lanthanide-incorporated tantalum nitride for n-channel
metal-oxide-semiconductor field-effect transistors |
Applied Physics Letters |
accepted |
|
T.
Yang, C. Shen, M.-F. Li, C. H. Ang, C. X. Zhu, Y.-C. Yeo, G. Samudra and D.-L. Kwong |
Interface trap passivation
effect in NBTI measurement for p-MOSFET with SiON gate dielectric |
IEEE Electron
Device Letters |
vol. 26, 2005 |
|
J.
F. Kang, H. Y. Yu, C. Ren, X. P. Wang, M.-F. Li, D. S. H. Chan, Y.-C.
Yeo, N. Sa, H. Yang, X. Y. Liu, R. Q. Han, and D.-L. Kwong |
Improved electrical and
reliability characteristics of HfN/HfO2 gated nMOSFET with
0.95 nm EOT fabricated using a gate-first process |
IEEE Electron
Device Letters |
vol. 26, no. 4, pp. 237-239, Apr.
2005. |
|
Sun-Jung
Kim, Byung-Jin Cho, MB Yu, MF Li, YZ Xiong, C Zhu, A Chin, and DL Kwong |
Metal-Insulator-Metal RF Bypass Capacitor using Niobium Oxide (Nb2O5)
with HfO2/Al2O3 Barriers |
IEEE Electron
Device Letters |
accepted |
|
Wan
Sik Hwang, Jing Hao Chen, Won Jong Yoo, and
Vladimir Bliznetsov |
Investigation
of Etching Properties of Metal-nitride/ High-K Gate Stacks Using
Inductively Coupled Plasma |
J. Vac.
Sci. Technol.
A |
23, pp964.
|
|
Ying
Qian Wang, Jing Hao Chen, Won Jong Yoo, Yee-Chia Yeo, Albert Chin, and
An Yan Du |
Charge Storage
Properties and Memory Applications of Dual Phase HfO2-HfxSi1-xO2
Dielectric Layer |
Journal of
Applied Physics |
vol. 98, pp. 013536, July 2005
|
|
King
Jien Chui, Ganesh Samudra, Yee-Chia Yeo, Kheng-Chok Tee, Kum-Woh Leong,
Kian Meng Tee, Francis Benistant, and Lap Chan |
Source/drain
on depletion layer (SDODEL) MOSFET for performance enhancement |
IEEE
Electron Device Letters |
vol. 26, no.
3, pp. 205-207, Mar 2005. |
|
Kah-Wee
Ang, King-Jien Chui, Vladimir Bliznetsov, Chih-Hang Tung, Anyan Du,
Narayanan Balasubramanian, Ganesh Samudra, Ming Fu Li, and Yee-Chia Yeo |
Lattice strain
analysis of transistor structures with silicon-germanium and
silicon-carbon source/drain stressors |
Applied Physics Letters |
vol. 86,
093102, Feb 2005. |
|
Jing
Hao Chen, Won Jong Yoo, Daniel SH Chan, and Lei-Jun Tang |
Self-assembly
of Al2O3 nanodots on SiO2 using
two-step controlled annealing technique for long retention nonvolatile
memories |
Applied
Physics Letters |
vol. 86,
no.7, 073114, Feb 2005. |
|
Yee-Chia Yeo and Jisong Sun |
Finite element study of strain distribution in transistor with
silicon-germanium source and drain regions |
Applied
Physics Letters |
vol. 86, no. 2,
023103, Jan 2005. |
|
|
|
|
2004 |
|
Xiongfei Yu, Chunxiang Zhu,
Mingbin Yu, and Dim-Lee Kwong |
Improvements
on surface carrier mobility and electrical stability of MOSFETs using
HfTaO gate dielectric |
IEEE
Transactions on Electron Devices |
vol. 51, No. 12,
Dec. 2004 |
|
Jing Hao Chen, Ying Qian Wang,
Won Jong Yoo, Yee-Chia Yeo, Ganesh Samudra, Daniel SH Chan, An Yan Du,
and Dim-Lee Kwong |
Nonvolatile
Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-k
Tunneling and Control Oxides: Device Fabrication and Electrical
Performance |
IEEE
Transactions on Electron Devices |
vol. 51, No. 11,
pp.1840-1848, Nov. 2004 |
|
C. Ren,
H. Y. Yu, X. P. Wang, H. H. H. Ma, D. S. H. Chan, M.-F. Li , Yee-Chia
Yeo, C. H. Tung, N. Balasubramanian, A. C. H. Huan, J. S. Pan, and D.-L.
Kwong |
Thermally Robust TaTbxN Metal Gate Electrode for n-MOSFETs Applications |
IEEE Electron
Device Letters |
accepted. |
|
X.Y. Chen, Y.F. Lu,
L.J. Tang, Y.H. Wu, B.J. Cho, B.J. Yang, J.R. Dong, and W.D. Song |
Annealing and
oxidation of silicon oxide films prepared by plasma-enhanced chemical
vapor deposition |
Journal of
Applied Physics |
accepted. |
|
Nan Wu, Qingchun Zhang, C. Zhu, D.S.H.
Chan, MF Li, N. Balasubramanian, A. Chin, and D.L. Kwong |
Alternative
surface passivation on germanium for metal-oxide-semiconductor
applications with high-K gate dielectric |
Applied
Physics Letters |
vol. 85, no. 18,
pp. 4127-4129, Nov 2004. |
|
M.S. Joo, B.J. Cho, N. Bala., and D.-L. Kwong |
Thermal
instability of effective work function in metal/high-k stack and its
material dependence |
IEEE Electron
Device Letters |
Nov. 2004 |
|
Xiongfei
Yu, Chunxiang Zhu, M.F. Li, A. Chin, A.Y. Du, W.D. Wang, and D.-L. Kwong |
Electrical characteristics and suppressed boron penetration behavior of
thermally stable HfTaO gate dielectrics with polycrystalline-silicon
gate |
Applied
Physics Letters |
vol. 85, no. 14,
p.2893, Oct. 2004 |
|
Qingchun
Zhang, Nan Wu, and Chunxiang Zhu |
The
Electrical and Material Properties of HfOxNy Dielectric on Germanium
Substrate |
Japanese Journal of Applied
Physics, Letters |
accepted. |
|
S.-J. Ding, H. Hu, C.X.
Zhu, M.F. Li, S.J. Kim, B.J. Cho, D.S.H. Chan, M.B. Yu,
A.Y. Du, A. Chin, and D.L. Kwong |
Evidence and
understanding of atomic-layer-deposited HfO2-Al2O3 laminate MIM
capacitors outperforming sandwich counterparts |
IEEE Electron
Device Letters |
vol. 25, no. 10,
p.681, Oct. 2004 |
|
Tony Low, M.
F. Li, Chen Shen, Yee-Chia Yeo, Y. T. Hou, Chunxiang Zhu, Albert Chin,
and D. L. Kwong |
Electron
mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi
conductor field-effect transistors |
Applied
Physics Letters |
vol. 85, No. 12,
p.2402, Sept. 2004 |
|
Nan Wu, Qingchun Zhang, C. Zhu, D.S.H. Chan, Anyan Du, N.
Balasubramanian, MF Li, A. Chin, Johnny Sin, and D.L. Kwong |
A TaN/HfO2/Ge pMOSFET with
Novel SiH4 Surface Passivation |
IEEE Electron
Device Letters |
Sep. 2004 |
|
C.S. Park,
B.J. Cho, and D.-L. Kwong |
MOS
Characteristics of Synthesized HfAlON/HfO2 Stack using AlN/HfO2 |
IEEE Electron
Device Letters |
Sep. 2004 |
|
S.J. Kim, B.J. Cho, M.F. Li,
S.-J. Ding, C.X. Zhu, M.B. Yu, B. Narayanan, A. Chin, and D.L. Kwong |
Improvement of Voltage
Linearity in High-K MIM Capacitors Using HfO2/SiO2 Stacked Dielectric |
IEEE Electron
Device Letters |
vol. 25, no. 8, p.
538, Aug. 2004 |
|
D.S. Yu,
K.C. Chiang, C.F. Cheng, A. Chin, C. Zhu, M.F. Li, and D.-L. Kwong |
Fully
silicided NiSi:Hf/LaAlO3/Smart-Cut-Ge-On-Insulator n-MOSFETs with high
electron mobility |
IEEE Electron
Device Letters |
accepted. |
|
X.Y. Chen, Y.F. Lu, Y.H. Wu, B.J. Cho, W.D. Song and D.Y. Dai |
Optical properties of SiOx
nanostructured films by pulsed-laser deposition at different substrate
temperatures |
Journal of
Applied Physics |
vol. 96,
pp.3180-3186. |
|
X.Y. Chen, Y.F. Lu, Y.H. Wu, B.J. Cho, B.J. Yang, T.Y.F. Liew |
Laser annealing of silicon
nanocrystal films prepared by pulsed-laser deposition |
J. Vac.
Sci. Technol. B |
22, pp1731-1737.
|
|
C. Ren, H. Y. Yu, J. F. Kang, X. P. Wang, H. H. H. Ma, Yee-Chia Yeo, D.
S. H. Chan, M.-F. Li, and D.-L. Kwong |
A
Dual-Metal Gate Integration Process for CMOS with Sub-1 nm EOT HfO2 by
Using HfN Replacement Gate |
IEEE Electron
Device Letters |
accepted. |
|
Y. N.
Tan, W. K. Chim, B. J. Cho, and W. K. Choi |
Over-erase
phenomenon in SONOS-type Flash memory and its minimization using a
hafnium oxide charge storage layer |
IEEE
Transactions on Electron Devices |
accepted. |
|
Y. N.
Tan, W. K. Chim, B. J. Cho, and W. K. Choi |
A Novel
MONOS-type Flash Memory Using a High-k HfAlO Charge Trapping Layer |
Electrochemical and
Solid-State Letters |
accepted. |
|
Ying Qian Wang, J.H. Chen, W.J. Yoo, Y.C. Yeo, S.J. Kim, Rohit Gupta, Zerlinda
Tan, D.L. Kwong, A.Y. Du, and N. Balasubramanian |
Formation of Ge nanocrystals
in HfAlO high-k dielectric and application in memory device |
Applied
Physics Letters |
vol. 84, no. 26,
pp. 5407-5409, Jun 2004. |
|
Xiongfei Yu, Chunxiang Zhu, M.F. Li, Albert Chin, M.B. Yu, A.Y. Du, and
D.-L. Kwong |
Mobility Enhancement in TaN
Metal Gate MOSFETs Using Tantalum Incorporated HfO2 Gate
Dielectrics |
IEEE Electron
Device Letters |
accepted. |
|
C. S. Park, B. J. Cho, and D.-L. Kwong |
Thermally Stable Fully
Silicided Hf-Silicide Metal Gate Electrode |
IEEE Electron
Device Letters |
accepted. |
|
Rohit Gupta, W.J. Yoo, Y.Q.
Wang, Zerlinda Tan, G. Samudra, S.J. Lee, D.S.H. Chan, K.P. Loh, L.K.
Bera, N. Balasubramanian, and D.L. Kwong |
Formation of SiGe Nanocrystals
in HfO2 Using in situ CVD for Memory Applications |
Applied
Physics Letters |
vol. 84, no. 21,
pp. 4331-4333, May 2004. |
|
Kian Ming Tan, W.J. Yoo, H.H.H.
Ma, F. Li, and L. Chan |
The Direct Trim Etching
Process of Si/SiO2 Gate Stacks Using the 193nm ArF Patterns |
J. Vac.
Sci. Technol. A22 |
accepted. |
|
Jinghao Chen, W.J. Yoo,
Zerlinda YL Tan, Y.Q. Wang, and D.S.H. Chan |
Investigation of Etching
Properties of HfO Based High-K Dielectrics Using Inductively Coupled
Plasma |
J. Vac.
Sci. Technol. A22 |
accepted. |
|
Jinghao Chen, W.J. Yoo,
D.S.H. Chan and D. -L. Kwong |
Effects of Annealing and Ar
Ion Bombardment on the Removal of HfO2 Gate Dielectric |
Electrochemical and
Solid-State Letters |
7(3), F18-F20, 2004
|
|
H.Y. Yu, C. Ren, Yee.-Chia.
Yeo, J.F. Kang, X.P. Wang, HHH Ma, M.-F. Li, DSH Chan, D.-L. Kwong |
Fermi Pinning Induced
Thermal Instability of Metal Gate Work Functions |
IEEE Electron
Device Letters |
vol. 25, p337, May
2004 |
|
D. Gui, J.F. Kang, H.F.
Lim, H.Y. Yu |
SIMS Study on N
Diffusion in Hafnium Oxynitride |
Applied Surface Science |
accepted. |
|
C. S. Park,
B. J. Cho, and D.-L. Kwong |
Feasibility
study of using thin aluminum nitride film as a buffer layer for dual
metal gate process |
Thin Solid
Films |
accepted. |
|
H.Y. Yu, M.F. Li, D.L.
Kwong |
ALD (HfO2)x(Al2O3)1-x
high-K gate dielectrics for advanced MOS devices application |
Thin Solid
Films |
accepted. |
|
Debora C.H. Poon, L.S. Tan,
B.J. Cho, K.T. Ng, M. Bhat and L. Chan |
Electrical Evaluation of Laser
Annealed Junctions by Hall Measurements |
Thin Solid
Films |
accepted. |
|
C.C. Yeo, M.S.
Joo, B. J. Cho, and S.J. Whoang |
Effect of
Annealing on the Composition and Structure of HfO2 and
Nitrogen-Incorporated HfO2 |
Thin Solid
Films |
accepted. |
|
Nan Wu, Qingchun Zhang,
Chunxiang Zhu, C.C. Yeo, S.J. Whang, DSH Chan, M.F. Li, B.J. Cho, A.
Chin, D.-L. Kwong, A.Y. Du, C.H. Tung, N. Balasubramanian |
Effect of surface NH3 anneal
on physical and electrical properties of HfO2 films on Ge substrate |
Applied
Physics Letters |
vol. 84, no. 19,
pp. 3741-3743, May 2004. |
|
S.-J. Ding, H. Hu, C.
Zhu, S.J. Kim, X.F. Yu, M.-F. Li, B.J. Cho, D.S.H. Chan, M.B. Yu, S.C.
Rustagi, A. Chin, and D.-L. Kwong |
RF, DC and Reliability
Characteristics of Atomic Layer Deposited HfO2-Al2O3 Laminate MIM
Capacitors for Si RF IC Applications |
IEEE
Transactions on Electron Devices |
vol. 51, No. 6,
pp.886-894, Jun. 2004 |
|
S.Y. Zhu, H.Y. Yu, S.J.Whang,
J.H.Chen, C. Shen, Chunxiang Zhu, S.J. Lee, M.F.Li, DSH Chan, W.J. Yoo,
A. Du, C.H.Tung, J. Singh, A. Chin, D.L. Kwong |
Schottky Source/Drain MOSFETs
with High-K Gate Dielectrics and Metal Gate Electrode |
IEEE Electron
Device Letters |
May, 2004 |
|
H.Y. Yu, M.F. Li, and D.L.
Kwong |
Thermally Robust HfN Metal as
a Promising Gate Electrode for Advanced MOS Device Application |
IEEE
Transactions on Electron Devices |
vol. 51, Apr., 2004 |
|
V.C. Ngwan, C. Zhu, and A.
Krishnamoorthy |
Dependence of leakage
mechanisms on dielectric barrier in Cu–SiOC
damascene interconnects |
Applied Physics Letters |
vol. 84, p2316, March, 2004
|
|
J.F. Kang, H.Y. Yu, C. Ren,
M.F. Li, DSH. Chan, H. Hu, H.F. Lim, W.D. Wang, D. Gui, D.L. Kwong |
Thermal stability of
nitrogen
incorporated in HfOxNy gate dielectrics prepared by reactive sputtering |
Applied Physics Letters |
vol. 84, no. 9,
pp. 1588-1590, Mar 2004. |
|
C. Ren, H.Y. Yu, J.F. Kang,
Y.T. Hou, D.S.H. Chan, M.-F. Li, W.D. Wang, D.-L. Kwong |
Fermi Level Pinning Induced
Effective Work Function Thermal Instability of TaN/SiO2 Gate Stack |
IEEE Electron
Device Letters |
vol 25,
pp123-125, March 2004 |
|
D.S. Yu,
C.H. Huang, A. Chin, C. Zhu, M.F. Li, B.J. Cho, and D.-L. Kwong |
Al2O3/Ge-On-Insulator
n- and p-MOSFETs with fully NiSi and NiGe dual Gates |
IEEE Electron
Device Letters |
vol 25,
pp138-140, March 2004 |
|
H.Y. Yu, J.F. Kang, C. Ren,
J.D. Chen, Y.T. Hou, C. Shen, M.F. Li, D.S.H. Chan, K.L. Bera, C.H. Tung,
D.L. Kwong |
Robust High-Quality HfN/HfO2
Gate Stack for Advanced MOS Device Applications |
IEEE Electron
Device Letters |
vol 25,
pp70-72, Feb 2004 |
|
C. F. Tan, X. Y. Chen, Y. F.
Lu, Y. H. Wu, B. J. Cho, J. N. Zeng |
Laser annealing of silicon
nanocrystal films formed by pulsed-laser deposition |
J .LASER
Appl . |
16 (1): 40-45
FEB 2004 |
|
|
|
|
2003 |
|
S. J. Ding, H. Hu, H. F. Lim,
S. J. Kim, X. F. Yu, C. X. Zhu, M. F. Li, B. J. Cho, DSH Chan, S. C
Rustagi, M. B. Yu, A. Chin, D. -L. Kwong |
High Performance MIM Capacitor
using ALD high-K HfO2-Al2O3 Laminate Dielectrics |
IEEE Electron
Device Letters |
vol 24, Dec 2003, pp730-732 |
|
D.S. Yu,
C.H. Huang, A. Chin, C. Zhu, M.F. Li, B.J. Cho, and D.-L. Kwong |
Fully
silicided NiSi and Germanided NiGe dual gates on SiO2 n- and p-MOSFETs |
IEEE Electron
Device Letters |
vol 24,
pp739-741,
Dec 2003, |
|
Debora C. H. Poon, L. S. Tan,
B. J. Cho, Alex See and M. Bhat |
Boron profile narrowing in
laser processed silicon after rapid thermal anneal |
Journal of the
Electrochemical Society |
January 2004 |
|
M. S. Joo, B. J. Cho, C. C.
Yeo, D. S. H. Chan, S. J. Whoang, S. Mathew, L. K. Bera, N. Bala, and
D.-L. Kwong |
Formation of Hafnium-Aluminium-Oxide
gate dielectric using single cocktail liquid source in MOCVD process |
IEEE Transactions on Electron
Devices |
v. 50, p. 2088, Oct, 2003 |
|
Jinghao Chen, Kian Ming Tan,
Nan Wu, Won Jong Yoo, and Daniel SH Chan |
Formation of polycrystalline
silicon germanium’HfO2 gate stack structure using inductively coupled
plasma etching |
J. of Vacuum Science &
Technology A |
A 21(4), Jul/Aug 2003 pp1210-1217 |
|
C. C. Yeo, B. J. Cho, M. S. Joo, S. J. Whoang, D.
L. Kwong, L. K. Bera, S. Mathew, and N. Balasubramanian |
Improvement of Electrical Properties of MOCVD HfO2 by Multi-Step
Deposition Process |
Electrochemical and Solid-State Letters |
2003, accepted for publication |
|
K. T. Chan, C. H. Huang, A.
Chin, M. F. Li, and Dim-Lee Kwong, S. P. McAlister, D. S. Duh, W. J. Lin |
Large Q-factor
Improvement for Spiral Inductors on Silicon using Proton Implantation |
IEEE Microwave &
Wireless Components Lett.
|
2003, accepted for publication |
|
K.Y. Yiang, W.J. Yoo, Q. Guo
and Ahila Krishnamoorthy |
Electrical conduction in
carbon-doped silicon oxide |
Applied Physics Letters |
v. 83, p. 524, July 2003 |
|
H. Hu, C Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B.J. Cho, W.
K. Choi, and N. Yakovlev |
Physical and Electrical Characterization of HfO2 Metal-Insulator-Metal
Capacitors for Si Analog Circuit Applications |
Journal of
Applied Physics |
July 2003 |
|
S. J. Kim, B. J. Cho, M. F. Li, C. Zhu, A. Chin, and D. L. Kwong |
Lanthanide (Tb)-doped HfO2 for High Density MIM Capacitors |
IEEE Electron
Device Letters |
July 2003 |
|
S. J. Kim, B. J. Cho, M. F. Li, X. Yu, C. Zhu, A. Chin, and D. L.
Kwong |
PVD HfO2 for High Precision MIM Capacitor Applications |
IEEE Electron
Device Letters |
June 2003 |
|
X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, M. H. Liu, D. Y. Dai, W. D.
Song |
Mechanisms of photoluminescence from silicon nanocrystals formed by
pulsed-laser deposition in argon and oxygen ambient |
Journal of
Applied Physics |
v. 93, No 11, June 2003 |
|
C. S. Park, B. J. Cho, and D. L. Kwong |
An Integrable Dual Metal
Gate CMOS Process Using an Ultra-Thin Aluminum Nitride Buffer Layer |
IEEE Electron
Device Letters |
May 2003 |
|
H. Y. Yu, H. F. Lim, M. F. Li, C. Zhu, C. H. Tung,
A. Y. Du, W. D. Wang, D. Z. Chi, and D. L. Kwong |
Physical and Electrical Characteristics of HfN Gate Electrode for
Advanced MOS Devices |
IEEE Electron
Device Letters |
May 2003 |
|
M.Y. Yang, C. H. Huang, A.
Chin, C. Zhu, M. F. Li, and D. L. Kwong |
High Density MIM
Capacitors Using AlTaOx Dielectrics |
IEEE Electron
Device Letters |
May 2003 |
|
C. Y. Lin, M. W. Ma, A. Chin,
C. Zhu, M. F. Li, and D. L. Kwong |
Fully silicided NiSi
gate on La2O3 MOSFETs |
IEEE Electron
Device Letters |
May 2003 |
|
K. T. Chan, A. Chin, Y. D.
Lin, C. Y. Chang, C. X. Zhu, M. F. Li, D. L. Kwong, S. McAlister, D. S.
Duh, and W. J. Lin |
Integrated antennas
on Si with over 100 GHz performance, fabricated using an optimized
proton implantation process |
IEEE Microwave &
Wireless Components Lett. |
Sept. 2003 |
|
K. T. Chan, A. Chin, M. F. Li,
Dim-Lee Kwong, S. P. McAlister, D. S. Duh, W. J. Lin, and C. Y. Chang |
High Performance
Microwave Coplanar Band-Pass and Band-Stop Filters on Si Substrates |
IEEE
Trans.
Microwave Theory Tech. |
vol. 51, no. 9, pp.
2036-2040 (2003). |
|
T. Low, Y. T. Hou and M. F. Li |
Improved one-band
self-consistent effective mass methods for hole quantization in p-MOSFET |
IEEE Transactions on
Electron Devices |
v. 50, p.1284, May 2003 |
|
W. Y. Loh, B. J. Cho, C. H. Ang, J. Z. Zheng, D. L. Kwong |
Localized oxide degradation in ultra-thin gate dielectric and its
statistical analysis |
IEEE Transactions on
Electron Devices |
April 2003 |
|
Debora C. H. Poon, B. J. Cho, Y. F. Lu, M. Bhat and A. See |
Multiple-pulse laser annealing of preamorphized silicon for
ultrashallow boron junction formation |
J. of Vacuum Science & Technology B |
B 21(2), pp. 706-709, Mar/Apr 2003 |
|
M. S. Joo, B. J. Cho, C. C. Yeo, N. Wu, H. Yu, C. X. Zhu, M. F.
Li, D. -L. Kwong, and N. Balasubramanian |
Dependence of Chemical Composition Ration on Electrical properties of
HfO2-Al2O3 Gate Dielectric |
Japanese Journal of Applied
Physics |
vol. 42, pp. L220-L222, March 2003 |
|
H. Hu, C. Zhu, X. Yu, A. Chin, M. F. Li, B. J. Cho, and D. L.
Kwong |
MIM Capacitors Using Atomic-Layer-Deposited High-κ (HfO2)1-x(Al2O3)x
dielectrics |
IEEE Electron
Device Letters |
v. 24, p. 60, Feb, 2003 |
|
X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong,
F. D. Foo, and M. B. Yu |
A high density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics |
IEEE Electron
Device Letters |
v. 24, p. 63, Feb, 2003 |
|
Y. T. Hou, M. F. Li, H. Y. Yu, and D. L. Kwong |
Modeling of Tunneling Currents Through HfO2 and (HfO2)x(Al2O3)1-x Gate
Stacks |
IEEE Electron
Device Letters |
v. 24, p. 96, Feb, 2003 |
| |
|
|
2002 |
|
G. Chen, M.F. Li, C.H. Ang, J.Z. Zhen and D.L. Kwong |
Dynamic NBTI of pMOS Transistors and its impact on MOSFET scaling |
IEEE Electron
Device Letters |
v. 23, Dec 2002 |
|
H. Y. Yu, N. Wu, M. F. Li, C. Zhu, B. J. Cho, D. L. Kwong, C. H.
Tung, J. S. Pan, J. W. Chai, W. D. Wang, D. Z. Chi, C. H. Ang, J. Z.
Zheng |
Thermal Stability of (HfO2)x(Al2O3)1-x on Si |
Applied Physics
Letters |
v. 81, p. 3618, Nov. 2002 |
|
H. Hu, C. Zhu, Y. F. Lu, M. F. Li, B. J. Cho, and W. K. Choi |
A high performance MIM capacitor using HfO2 dielectrics |
IEEE Electron
Device Letters |
v. 23, p. 514, Sep. 2002 |
|
W. Y. Loh, B. J. Cho and M. F. Li |
Evolution of Quasi-Breakdown in Thin Gate Oxides |
Journal of Applied Physics |
vol. 91, no. 8, p. 5302 – 5306, 2002 |
|
H. Y. Yu, M. F. Li, B. J. Cho, C. C. Yeo, M. S. Joo, D. L. Kwong,
J. S. Pan, C. H. Ang, and J. Z. Zheng |
Energy gap and band alignment for (HfO2)x(Al2O3)1-x on (100) Si |
Applied Physics Letters |
v. 81, p. 376, July 2002 |
|
H. Y. Yu, Y. T. Hou, M. F. Li, and D. L. Kwong |
Investigation of Hole Tunneling Current through Ultrathin Oxynitride/Oxide Stack Gate
Dielectrics in p-MOSFET's |
IEEE Transactions on Electron Devices |
v.49, p.1158, 2002 |
|
H. Y. Yu, Y. T. Hou, M. F. Li, and D. L. Kwong |
Hole Tunneling Current through Oxynitride/Oxide Stack and the Stack optimization for p-MOSFET's |
IEEE Electron Device Letters |
v.23, p. 285, 2002 |
|
X. Y. Chen, Y. F. Lu, B. J. Cho, Y. P. Zeng, J. N. Zeng, and Y. H. Wu |
Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer
laser irradiation |
Applied Physics Letters |
v. 81, p. 1344, 2002 |
|
W. Y. Loh, B. J. Cho, and M. F. Li |
Investigation of Quasi-Breakdown Mechanism through Post-Quasi-Breakdown
Thermal Annealing |
J. Journal of Applied Physics |
v. 41, no. 5A, 2002 |
|
W. Y. Loh, B. J. Cho, and M. F. Li |
Correlation between interface traps and gate oxie leakage current in the
direct tunneling regime |
Applied
Physics Letters |
v. 81, no. 2, p. 379, 2002 |
|
G. Chen, M. F. Li, and Y. Jin |
Interaction of interface-traps located at various sites in MOSFETs under
stress |
IEEE Trans. Reliability |
v. 51, no.4, p.387, 2002 |
|
C. H. Ang, S. S. Tan, C. M. Lek, W. Lin, Z.
J. Zheng T. Chen and B. J. Cho |
Suppression of Nitridation-Induced
Interface Traps and Hole Mobility Degradation by Nitrogen Plasma
Nitridation |
ECS (Letter:ESL) |
v. 5, pp. G26-G28, 2002 |
|
C. H. Ang, C. M. Lek, S. S. Tan, B. J. Cho,
T. Chen, W. Lin, J. Z. Zhen |
Negative Bias Temperature
Instability on Plasma-Nitrided Silicon Dioxide Film |
J. Journal of Applied Physics |
v. 91, pp. L314-L316, 2002 |
|
Y.T. Hou,
M.F.Li, Y. Jin, and W.H. Lai |
Direct tunneling hole current
through ultrathin gate oxides in metal-oxide-semiconductor devices |
Journal of Applied Physics |
v. 91,
p. 258, 2002 |
|
S Sreelal, C K Lau and G
S Samudra |
capacitance
characteristics of deep submicrometre grooved gate MOSFETs |
Semiconductor Science & Technology |
vol. 17, pp.179-188, 2002 |
|
C. M. Lek, B. J. Cho, C. H. Ang, S. S.
Tan, W. Y. Loh, J. Z. Zhen, L. Chan |
Impact of Decoupled Plasma Nitridation of Ultra-Thin Gate Oxide on the Performance of p-channel
MOSFETs |
Semiconductor Science & Technology |
v. 17, p. L25 – L28, 2002 |
| |
|
|
2001 |
|
Y. T.
Hou and M. F. Li |
Hole quantization effects
and threshold voltage shift in pMOSFET -- assessed by improved one-band
effective mass approximation |
IEEE Transactions
on Electron Devices |
v. 48, no.6, p. 1188, 2001 |
|
Y. T. Hou and M. F. Li
|
A Simple and Efficient Model for
Quantization Effects of Hole Inversion Layers in MOS Devices |
IEEE Transactions on Electron Devices |
v.
48,
p. 2893, 2001 |
|
Y. T.
Hou, M. F. Li, W. H. Lai, and Y. Jin |
Modeling and
characterization of direct tunneling hole current in
p-metal-oxide-semiconductor field-effect transistors |
Applied Physics
Letters |
v. 78, p. 4034, 2001 |
|
Y. T.
Hou and M. F. Li |
A novel simulation algorithm
for Si valence hole quantization of inversion layer in
metal-oxide-semiconductor devices |
J. Journal of Applied Physics |
v. 40, p. L144, 2001 |
|
G. Chen ,M. F. Li and X.
Yu |
Interface traps at high
doping drain extension region in sub-0.25-micron MOSTs |
IEEE Electron Device Letters |
22, p. 233-235, 2001 |
| |
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