SNDL contributes to the highest ranked international journals and conferences as one of the world top class research groups.
     
  4 papers are accepted for 2005 Symposium on VLSI Technology
    +. Dual Metal Gate Process by Metal Substitution of Dopant-Free Polysilicon on High-K Dielectric - Park Chang Seo et al.
+. Lanthanide-Incorporated Metal Nitrides with Tunable Work Function and Good Thermal Stability for NMOS Devices - Ren Chi et al.
+. Fast and Slow Dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application - Yang Tian et al.
+. High Capacitance Density (> 17 fF/um2) Nb2O5-based MIM Capacitors for Future RF IC Applications - Kim Sun Jung et al.
     
   

IEDM & VLSI Symposium (2003~2004)

Industry

    

Universities

  
Presented by Contribution   Presented by Contribution
Samsung 75   NUS (SNDL) 17
IBM 42   Stanford 12
Toshiba 41   MIT, Chiao-Tung U. 11
TSMC 26   UT Austin, Berkeley 8
ST Microelectronics 21   U. Tokyo 7
Intel 20   Seoul Nat’l, Purdue 6
IMEC, Infineon, Fujitsu 19   NCSU, HK UST 5
NEC 18   Florida, Michigan 4
Hitachi, 16   Cornell, Harvard, Yale, Delft, Illinois, UCLA, Tsinghua, Princeton, Georgia Tech., Ohio State, Duke, Penn. State, Hiroshima, Tsukuba, Tokyo IT, Pohang Tech, Nanyang Tech., Nat’l Taiwan, India IT, Munich Tech, Bologna, U SC, Milano Poly, etc. 1 - 3
Philips, 14  
MIRAI 12  
Sony, Motorola, Micron, UMC, SELET,
Sematech, Hynix, Renesas, CEA/DRT		 < 10  
   

Invited papers not included.
     
  IEEE Electron Device Letters by SNDL (2004)
   
  Title  
1 Thermal instability of effective work function in metal/high-k stack and its material dependence Nov.
2 MOS characteristics of substituted Al gate on high-K dielectric
3 Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors Oct.
4 A TaN/HfO2/Ge pMOSFET with Novel SiH4 Surface Passivation Sep.
5 MOS Characteristics of Synthesized HfAlON/HfO2 Stack using AlN/HfO2
6 Improvement of Voltage Linearity in High-K MIM Capacitors Using HfO2/SiO2 Stacked Dielectric Aug.
7 N-type Schottky barrier source/drain MOSFET using Ytterbium Silicide
8 FUSI NiSi:Hf/LaAlO3/Smart-Cut-Ge-On-Insulator n-MOSFETs with high electron mobility
9 A Dual-Metal Gate Integration for CMOS with Sub-1 nm EOT HfO2 by Using HfN Replacement
10 Mobility Enhancement in TaN Gate MOSFETs Using Ta Incorporated HfO2 Gate Dielectrics July
11 Thermally stable fully silicided Hf-silicide metal-gate electrode June
12 Schottky Barrier Source/Drain MOSFETs with High-K Gate Dielectrics and Metal Gate Electrode May
13 Fermi pinning-induced thermal instability of metal-gate work functions
14 Fermi Level Pinning Induced Effective Work Function Thermal Instability of TaN/SiO2 Gate Mar.
15 Al2O3/Ge-On-Insulator n- and p-MOSFETs with fully NiSi and NiGe dual Gates
16 Robust High-Quality HfN/HfO2 Gate Stack for Advanced MOS Device Applications Feb.
     
  6 papers including a late news were presented in 2004 Int'l Electron Devices Meeting (IEDM)
     
  2 papers were presented in 2004 Symposium on VLSI Technology
    +. Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs - Kim Sun Jung et al.
     >>> one Best Student Paper Award
+. High Mobility and Excellent Electrical Stability of MOSFETs Using a Novel HfTaO Gate Dielectric - Yu Xiongfei et al.
     
  7 papers (2 in collaboration with Chiao-Tung Univ.) presented in 2003 Int'l Electron Devices Meeting (IEDM)
    - Voltage and Temperature Dependence of High-K HfO2 MIM Capacitors: A Unified Understanding and Prediction;  Dr Zhu CX  et al.
- High Performance ALD HfO2-Al2O3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications; Hu Hang et al.
- Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode using Carrier Separation;  Loh Wei Yip et al.
- Thermally Robust High Quality HfN/HfO2 Gate Stack for Advanced CMOS Devices; Yu Hongyu et al.
- Investigation of Performance Limits of Germanium Double-Gated MOSFETs; Tony Low et al.
- Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO2/Si and Al2O3/Ge-On-Insulator MOSFETs; Prof. A. Chin et al.
- RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation; Prof. A. Chin et al.
 
   Research groups contributed to 2003 IEDM

Research groups

    

Universities

  
Presented by Contribution   Presented by Contribution
Samsung 18   Stanford U. 7
IBM 15   MIT 6
Intel, ST Microelectronics 9   NUS (SNDL) 5
TSMC, Toshiba 8   Chiao-Tung U. 4
Infineon, Hitachi, Philips, NEC,
Fujitsu, Stanford Univ.		 7   Berkeley, U. of Tokyo, Seoul U.,
N. Carolina State U., Tohoku U.		 3
IMEC, MIT 6   Cornell, U. of Illinois, U. Michigan,
Hiroshima U., U. of California, 		2
SNDL, Motorola 5  
Chiao-Tung Univ., MIRAI 4   National Taiwan U., Princeton U.,
U. Texas, Georgia Techn. Inst.,
Ohio State U., Harvard, India Inst. Of Techn., Duke U., Pennslyannia State U. 		1
Berkeley, Univ of Tokyo, Seoul Univ.,
Purdue, N. Carolina State Univ., Tohoku Univ.		 3  
     
   SNDL published 11 papers in IEEE Electron Device Letters in 2003. (go to SNDL publication list)
     
   SNDL presented 4 papers in 2003 Symposium on VLSI Technology.
    +. A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin AlN Buffer Layer - Park CS et al.
+. Robust HfN Metal Gate Electrode for Advanced MOS Devices Application - Yu Hongyu et al.
+. HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC Applications - Kim SJ et al.
+. Germanium MOS: An Evaluation from Carrier Quantization and Tunneling Current - Tony Low et al.
   Research groups contributed to 2003 Symposium on VLSI Technology
 
  Presented by Contribution
  Samsung 20
  Toshiba 11
  TSMC 8
  NEC, SNDL 4
  IBM (1 invited), Fujitsu, MIRAI project
Intel, AMD, Texas Inst, Univ of Texas, Infineon, Hitachi, SeLETe (Japan)		 2
  Motorola, Sematech, Micron, AMT, NIST, Matrix Semi, IMEC, STMicroelec., CEA/DRT-LETI (France), Matsushita, Sony, Univ of Tokyo (invited)
UMC, Tsing-Hua Univ (Taiwan), Chiao-Tung Univ, eMemory Tech (Taiwan)		 1
   
   SNDL filed 7 US patents.