Centre for Optoelectronics

Research Facilities

Centre for Optoelectronics have three cleanrooms (one class 1000 and two class 10,000) with microelectronics device processing equipments, facilities and state-of-art material growth facilities. The center's facilities, expertise and continuing research efforts would enhance the capability of the Centre to produce a wider range of Optoelectronics devices and Nano-photonics technology.

Electron Beam Evaporation System	High Resolution Double Crystal X-Ray Diffractometer
Inductively Coupled Plasma Etching System (ICP)	I-V Probe Station
Laser Writer	Mask Aligner
Metal Organic Chemical Vapor Deposition System (AIXTRON)	Metal Organic Chemical Vapor Deposition System (Emcore)
Molecular Beam Epitaxy (MBE) System	Photoluminescence Optical Characterization (Low-temp)
Photoluminescence Optical Characterization (Micro)	Rapid Thermal Annealing System
Surface Profiler

Equipment / Facilities Usage

Facilities Usage Charges

Equipment Registration User Guides

Equipment Booking

Equipment Safe Work Procedure

Electron Beam Evaporation System (2 units)
Top	Super User: Musni Edward E-beam evaporation system for Metal Deposition Model: Edward Auto 306 Turbo Substrate size: irregular to standard 8”dia wafer Metals: Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium, Platinum Crucibles: Intermetallic-IML, Graphite liner-GL, ThickWall Graphite Liner-TWGL
High Resolution Double Crystal X-Ray Diffractometer
Top	Super User: Rayson Tan (IMRE) X-pert Pro-MRD, PW 3050/65 X-ray diffractometer Model: X-pert Pro-MRD, PW 3050/65 X-Ray source: Cu Goniometer and sample stage: minimum step size in θ and 2θ is 0.0001°, sample rotation (phi) is 360°, sample tilt (psi) is 180° and x,y,z movement from 0.01mm to a few cm. X-Ray Optics: (Incident beam optics) Ge(220) with mirror for 4 bounce high-resolution and high intensity, (Diffracted beam optics) Soller slits/collimators/monochromator. Detector: Proportional detector Capabilities: The system is able to measure single crystal thin film
Inductively Coupled Plasma Etching System (ICP)
Top	Super User: Son Jae Sung Plasma-Therm Inductively Coupled Plasma Etching System (ICP) Model: SLR Series (SLR-770) Substrate size: irregular to standard 8”dia wafer Pressure: <.3 mT in 1 minute
I-V Probe station
Top	Super User: Musni Model: Micromanipulator-Model 6000 with Temperature-Variable Chuck X-Y stage: moves 4"x4", chuck is for low contact resistance. The operating temperature can be varied from room temperature to 400*C. Model: Parameter Analyzer B1500A with 1 High Power SMU (HPSMU), 2 Medium Power SMUs (MPSMU), 1 MFCMU and 1 GNU. Capabilities: I-V measurement (1pA-1A), Pulsed I-V measurement, C-V measurment (frequency up to 1MHz). Windows OS-Based Software.
Laser Writer
Top	Super User: Zhang Chi Model: Microtech Laserwriter LW405-A Substrate size: up to 150x150 (6”x6”) (mm) Positioning accuracy: ± 0.1 (μm) Minimum linewidth: 0.8 (800nm)(μm) Exposure wavelength: 325-405 (nm) Variable resolution: In the Laser Writer system the resolution is changed by replacing the beam focusing optics, which takes only a few seconds Laser focusing Auto: Writing on non-planar samples/Tilted samples, samples with poor planarity or slightly concave or convex substrate. Patterning can be made also on slightly tilted samples (up to 2°).
Mask Aligner
Top	Super User: Musni Model: Karl Suss MA6 UV400 Exposure Optics, wavelength: 365nm and 405nm Substrate Size: irregular to standard 2” dia wafer Mask Size: Typical 3” square Wafer Thickness: < 4 mm
Metal Organic Chemical Vapor Deposition System (AIXTRON)
Top	Super User: Chia Ching Kean (IMRE), Terry Zhuo (IMRE), Jin Yunjiang (IMRE) AIXTRON 200/4 MOCVD system for III-V (Arsenide, Phosphite) material growth research MO Sources: Group III precursors include trimethylgallium (TMG), trimethylaluminum (TMA), and trimethylindium (TMI). Group V sources-Arsine & Phosphine Carrier gases are hydrogen/nitrogen Dopants include bis(cyclopentadienyl), dimethylzinc (DMZ) and silane Reactor: 3x 2” diameter substrates Pressure 0-1000 mbars Temperature: RT-850°C
Metal Organic Chemical Vapor Deposition System (Emcore)
Top	Super User: Rayson Tan (IMRE), Soh Chew Beng (IMRE), Zhang Li EMCORE D-125 MOCVD system for III-V (Nitride) Material growth research MO Sources: Group III precursors include trimethylgallium (TMG), trimethylaluminum (TMA), and trimethylindium (TMI). Group V source is ammonia Carrier gases are hydrogen/nitrogen Dopants include bis (cyclopentadienyl) magnesium (Cp2Mg), dimethylzinc (DMZ) and silane Reactor: 3x 2” diameter substrates Temperature: RT-1100°C
Molecular Beam Epitaxy (MBE) System
Top	Super User: Tung Kar Hoo, Patrick RIBER 32P MBE system for III-V (Arsenide-based) material growth research The MBE system can growth III-V semiconductors In(Al or Ga)As(N) Epitaxial Source Materials: In, Ga, Al, and As cracker cell. Doping Materials: Si, Be Wafer Size up to 2” diameter substrate Growth Chamber Pressure: 10-9 Torr Substrate Temperature: RT-700°C
Photoluminescence Optical Characterization (Low-temp)
Top	Super User: Musni Low-temp Photoluminescence setup Laser Sources: (1) He-Cd Laser (λ~325nm, max power~200mw) (2) Ar Laser (INNOVA-I 70C-K, I70C-SPECTRUM) Wavelength Detection Range: 300nm– 1200nm Measurement Temperature Range: 4 – 300° K SPEX-MSD2-Monochromator controller Stanford Research Instrument, Model SR 830 DSP-Lock in Amplifier SPEX 750M –PMT Advanced Research System, Inc-LT cryostat C2761 Photomultiplier Cooler (λ~400-1200nm, peak wavelength 800nm, Dark current 7000nA)-HAMAMATSU Model C3830 power supply- HAMAMATSU C2761-Photomultiplier cooler control 331 Sample Temperature controller (Lakeshore)
Photoluminescence Optical Characterization (Micro)
Top	Super User: Tay Chuan Beng Micro-Photoluminescence Measurement Hardware setup based on Renishaw Ramascope 2000 Laser excitation source: He-Cd Laser (325nm, max power ~ 50mW) Wavelength Detection Range: from 330nm to 700nm Variable temperature measurement range from 15 to 300° K using a helium closed cycle cryostat
Rapid Thermal Annealing System (2 units)
Top	Super User: Musni ULVAC Rapid Thermal Annealing System Model: Mila-3000 Mini Lamp Annealer MILA-3000 - As the density of semiconductor becomes higher and its pattern becomes finer, Rapid Thermal Annealing ( RTA ) is attracting attention as an important heating technique in the semiconductor fabrication process. The MILA-3000 has integrated excellent characteristics, such as capabilities of rapid heating/cooling of the infrared gold image furnace, high precision temperature control, clean heating and versatile atmosphere selection, in a compact unit and features moderate price, small size and high performance. Max size: less than (20 x 20) mm
Surface Profiler
Top	Super User: Musni Model: Alpha Step 200 (Tencor Instrument, USA) System used for step heights, etch depths, coating thickness, micro roughness and a variety of precision surface characteristics. Vertical sensitivity: Measures the small steps - 20 to 50Å Vertical resolution: 5 Å with ± 160 kea range, 5 nm with ± 160 mm range Video Zoom: 40x to 120x magnifications Horz. Resolution max. 1 data point every: 400 A Max Sample Size Measures to center of 162mm (6.4") sample Stylus force .8 - 9.9 @ .1mg steps or to 25mg @1mg steps Vertical Resolution (max.) 1A w/ +/- 32kA range; 5A w/ +/- 160kA range