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Patents, Publications List for Centre for Optoelectronics(COE)-2005-2006

Publications (Jan 2006 – December 2006)

International Refereed Publications

 

1.    CHUAH Chong Wei, XU Baoxi, TAN Tien Siong, XIANG Ning, CHONG Tow Chong, “Tunable GHz Repetitive ps pulse InGaN laser”, accepted by IEEE Photonic Technology Letters.

2.    H. F. Liu, N. Xiang, H. L. Zhou, S. J. Chua, and S. Y. Chow, “Anneal-induced structural changes of GaIn(N)As / Ga(N)As multiple quantum wells grown by molecular beam epitaxy”, accepted by J. Crystal Growth (2006).

3.    N. Xiang, H. F. Liu, J. Kong, C. C. Chan, D. Y. Tang, M. Pessa, “Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells”, accepted by J. Crystal Growth (2006).

4.    H. F. Liu, N. Xiang and S. J. Chua, “Growth of InAs on micro- and nano-scale patterned GaAs (001) substrates by molecular beam epitaxy”, accepted by Nanotechnology (2006).

5.    H. F. Liu, D. Vivek, and N. Xiang, “Effect of indium segregation on the optical and structural properties of GaInNAs/GaAs quantum well at emission wavelength of 1.3-mm”, J. Appl. Phys., 100, 083518 (2006).

6.    N. Xiang, F. Lin, H. P. Li, H. F. Liu, W. Liu, W. Ji, and S. J. Chua, “GaN-based semiconductor saturable mirror operating around 415 nm”, Thin Solid Film, available on-line.

7.    H. F. Liu, N. Xiang, and S. J. Chua, “Influence of N incorporation on In content in GaInNAs / GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy”, Appl. Phys. Lett. 89, 71905 (2006).

8.    H. F. Liu, N. Xiang, S. J. Chua, and M. Pessa, “Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum wells upon postgrowth annealing”, Appl. Phys. Lett., 88, 181912 (2006).

9.    H. F. Liu, N. Xiang, S. Tripathy, and S. J. Chua, “Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaN_xAs_1-x”, J. Appl. Phys. 99, 103503 (2006).

10. H. F. Liu and N. Xiang,  “Influence of GaNAs strain-compensation layers on the optical properties of GaIn(N)As / GaAs quantum wells upon annealing”, J. Appl. Phys., 99, 053508 (2006). (This paper has been selected for the March 20, 2006 issue of Virtual Journal of Nanoscale Science & Technology.)

11. H. F. Liu, N. Xiang, S. Tripathy, and S. J. Chua, “Temperature dependence of Raman spectrum of GaNAs ternary alloys grown by molecular beam epitaxy”, Thin Solid Film, 515, 759-763 (2006).

12. H. F. Liu and N. Xiang, “Influence of GaNAs strain compensation layers upon annealing of GaIn(N)As / GaAs quantum wells”,  Thin Solid Film, available on-line.

13. H. F. Liu, N. Xiang, and S. J. Chua, “Effect of rapid thermal annealing on the local N-bonding configurations in GaNAs thin films grown by molecular beam epitaxy”, J. Crystal Growth, 290, 24 (2006).

14. H. F. Liu, D. Vivek, and N. Xiang, “Anneal-induced interdiffusion in 1.3-mm GaInNAs / GaAs quantum well structures grown by molecular beam epitaxy”, Journal of Applied Physics, 99, 13503 (2006).

15. H. F. Liu, N. Xiang, S. J. Chua, and S. Tripathy, “ Effect of Rapid Thermal Annealing on the Properties of GaNAs Thin Films Grown by Molecular Beam Epitaxy”, J. Crystal Growth, 288, 44-48 (2006).

Conference Publications

Conference Papers 2006

 

1.    F. Lin, N. Xiang, X. C. Wang,  J. Arokiaraj, W. Liu, H. F. Liu, and S. J. Chua, " Design and Optimization of GaN-based Semiconductor Saturable Absorber Mirror Operating Around 415 nm ", accepted by 2006 MRS Fall Meeting, November 27 - December 1, 2006, Boston.

2.    V. Dixit, H. F. Liu and N. Xiang, “Effect of In-segregation on sub bands in Ga_1-x’In_x’N_y’As_1-y’/GaAs quantum well for 1.3 and 1.55 mm operation wavelengths”, 6^th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD’06), 11-14 September 2006, Singapore. Conference Proceedings page 5-6.

3.    N. Xiang, H. F. Liu, J. Kong, C. C. Chan, D. Y. Tang, M. Pessa, “Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells”, The 14^th International Conference on Molecular Beam Epitaxy (MBE 2006), 3-8 September 2006, Tokyo. Conference Proceedings page 242.

4.    H. F. Liu, N. Xiang, H. L. Zhou, S. J. Chua, and S. Y. Chow, “ Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy”, The 14^th International Conference on Molecular Beam Epitaxy (MBE 2006), 3-8 September 2006, Tokyo. Conference Proceedings page 202.

5.    H. F. Liu, H. H. Wan, Q. Y. Toh, N. Xiang, and S. J. Chua, “Growth of InAs on micro- and nano-scale patterned GaAs (001) substrates by molecular beam epitaxy” The 14^th International Conference on Molecular Beam Epitaxy (MBE 2006), 3-8 September 2006, Tokyo. Conference Proceedings page 194.

6.    N. Xiang, H. F. Liu, J. Kong, V. Dixit and D. Y. Tang, “Dilute nitride semiconductor saturable absorber mirror for modelocking Nd:Gd_0.64Y_0.36VO₄ solid state laser”, 33^rd International Symposium on Compound Semiconductors, August 13-17, 2006, Vancouver, Canada. Conference Proceedings page 205-206.