1.      P Chen and SJ Chua, InGaN nanorings and nanodots by selective area epitaxy," Applied Physics Letters, vol. 87, 143111 (2005)

2.      KY Zang, SJ Chua, Nanoscale lateral epitaxial overgrowth of GaN on Si (111 Applied Physics Letters 87, 193106 (2005)

3.      H.Q Le S.J. Chua, Y.W. Koh, K.P. Loh, Z Che, C. Thompson, E.A. Fitzgerald, Growth of single crystal ZnO Nanorods on GaN using aqueous solution method. Appl. Phys. Letts. Vol. 87, pp 101908 (2005)

4.      C. Vijila, B. Bavani,  H. Chun,  Z.K. Chen,  C.G. Zhen, M. Auch ,  S.J. Chua, A study of charge mobility characteristics in a series of biphenylyl substituted PPV derivatives, Chemical Physics Letts. Vol. 414, pp. 393-397, (2005)

5.      CY Liu, SF Yoon, SZ Wang, S Yuan, JR Dong, JH Teng SJ Chua, “Optimization of Pulsed Anodic Oxidation for the Fabrication of AlGaInP Laser Diodes Grown with Tertiarybutylarsine and Tertiarybutylphosphine”, IEE Proc. Optoelectronics, vol. 152, No.4 (2005)

6.      A. Ramam, G.K. Chowdhury and S.J.Chua, An approach to the design of highly selective resonant-cavity-enhanced photodetectors, Appl. Phys. Letts., vol. 86, 171104 (2005)

7.      SJ Chua, “Quantum Dots Light up”, Innovation, pp. 20 – 21, (2005)

8.      Q.F. Yan, Z.C. Zhou, X.S. Zhao and S.J. Chua, Line defects embedded in three-dimensional photonics crystals, Adv. Materials, vol. 17, pp. 1917 -1920, (2005)

9.      Q.F. Yan, A Chen, S.J. Chua and X.S. Zhao, Incorporation of Point Defects into Self-assembled Three-Dimensional Colloidal Crystals, Adv. Materials, vol. 17, pp. 2849 -2853, (2005)

10.    Z. Chen, S.J. Chua, P.D. Han, X.L. Liu, D.-C. Lu, Q.S. Zhu, Z G Wang, S. Tripathy, “Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates”, Physica E, Vol 27 No 3 pp 314-318, (2005)

11.    SJ Park, HB Lee, LS Wang SJ Chua, JH Lee and SH Hahm, “Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon”, Phys. Stat. Sol.  (c) 2, 7, pp. 2559 – 2563, (2005)

12.    X.C. Wang, G. C. Lim, F. L. Ng, W. Liu, and S. J. Chua, “Femtosecond pulsed laser-induced periodic surface structures on GaN/sapphire'" Applied Surface Science, vol. 252, pp. 1492-1497 (2005)

13.    X.C. Wang, G. C. Lim, W. Liu, C.B. Soh and S. J. Chua, “Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN" Applied Surface Science, vol. 252, pp. 2071-2077 (2005)

14.    A P Vajpeyi, S J Chua, S Tripathy, W Liu, P Chen and L S Wang, “High optical quality nanoporous GaN prepared by photo-electrochemical etching”. Electrochemical and Solid State Letters Vol 8 No 4, pp G85-G88, (2005)

15.    A P Vajpeyi, S Tripathy, SJ Chua, EA Fitzgerald, “Investigation of optical properties of nanoporous GaN films”,  Physica E,  Vol 28, pp 141 - 149, (2005)

16.    YD Wang, KY Zhang, SJ Chua, S. Tripathy, P. Chen and CG Fonstad, “Nano-ari=bridged lateral overgrowth of GaN on ordered Nanoporous GaN template”, Appl. Phys. Letts. Vo. 87, p. 251915, (2005)

17.    YD Wang, SJ Chua, S Tripathy, MS Sander, P Chen and CG Fonstad, “High optical quality GaN nanopillar arrays”,  Appl. Phys. Letts., vol. 86, pp.071917, (2005)

18.    BJ Chen, XW Sun, BK Tay, L Ke and SJ Chua, “Improvement of efficiency and stability of polymer light emitting devices by modifying indium tin oxide anode surface with ultrathin tetrahedral amorphous carbon film”, Appl. Phys. Letts., vol. 86, pp.063506, (2005)

19.    BJ Li, Y Zhang, LH Teng, YZ Zhao, SJ Chua and XG Wang, “Symmetrical 1X2 digital photonic splitting witch with low electrical power consumption in SiGe waveguides”, Optics Express, Vol. 13, No. 2, pp. 654-659, (2005)

20.    L Ke, RS Kumar, P. Chen, L. Shen, SJ Chua, AP Burden, “Enhanced interface in organic light-emitting diodes” IEEE Photonics Tech. Letts., vol. 17, No.3, pp. 1 -3, (2005).

21.    L Ke, RS Kumar, AP Burden and SJ Chua, “Blocking impurities in Organic Light Emitting Device by inserting Parylene Interlayer”, Jap. J. of Appl. Phys., Vol. 44, No. 1A, pp 406 - 409 (2005)

22.    L. Ke, R.S. Kumar, S.J. Chua and A.P. Burden, “Degradation study in flexible substrate organic light-emitting diodes”, Appl. Phys. A81, 969-974, (2005)

23.    CK Chia, SJ Chua, S Tripathy, JR Dong, “Group V intermixing in InAs/InP quantum dots”, Appl. Phys. Letts, vol. 86, pp. 051905 -1-3, (2005)

24.    K Wang, Y Kui and SJ Chua,”Ti diffusion and residual stress of Pt thin films on Ti/SiO2/Si substrate”, J. Appl. Phys., Vol. 98, pp. 013538, (2005)

25.    C. B. Soh, S. J.  Chua, S. Tripathy, W. Liu andD. Z. Chi,”Influence of V-defects on luminescence properties of AlInGaN quaternary alloy”, J. Phys Condensed Matter,  vol. 17, pp. 729-736, (2005)

26.    C. B. Soh, S. J. Chua, W Liu, MY Lai and S. Tripathy , “Anomalous optical transitions in AlInGaN/GaN heterostructures grown by metalorganic chemical vapour deposition” Solid State Communications, Vol. 136, pp. 421 – 426, (2005).

27.    CX Xu, XW Sun, BJ Chen, ZL Dong, MB Yu, XH Zhang and SJ Chua, “Network array of ZnO whiskers”, Nanotechnology, 16, pp. 70 - 73, (2005)

28.    SJ Chua, S. Tripathy, P. Chen, E. Takasuka and M Ueno, “Near Field optical characterisation of GaN and In_xGa_1-xN/GaN heterostructures grown on freestanding GaN substrates”, Physica E (25), pp. 356-365, (2005)

29.    HW Choi, CW Jeon, C Liu, IM Watson, MD Dawson, PR Edwards, RW Martin, S Tripathy and SJ Chua, “InGaN nano-ring structures for high efficiency light-emitting diodes”, Appl. Phys. Letts., vol. 86, 021101, (2005)

30.    S. Tripathy, C.K. Chia, J.R. Dong and S.J. Chua, “Annealing-Induced Group V Intermixing in InAs/InP Quantum Dots Probed By Micro-Raman Spectroscopy”, Electrochemical and Solid-St Letts., vol. 8 (8), G194 –G197 (2005)

31.    V. Chellappan, B Balakrishnan, C Huang, ZK Chen, CG Zhen, M Auch, SJ Chua, “A study of positive charge mobility in a series of novel biphenylyl substituted PPV derivatives” J. Chem. Phys. Vol. 414, pp. 393 – 397, (2005)

1. F. Lin, N. Xiang, X. C. Wang,  J. Arokiaraj, W. Liu, H. F. Liu, and S. J. Chua, " Design and Optimization of GaN-based Semiconductor Saturable Absorber Mirror Operating Around 415 nm ", accepted by 2006 MRS Fall Meeting, November 27 - December 1, 2006, Boston.

2. V. Dixit, H. F. Liu and N. Xiang, “Effect of In-segregation on sub bands in Ga_1-x’In_x’N_y’As_1-y’/GaAs quantum well for 1.3 and 1.55 mm operation wavelengths”, 6^th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD’06), 11-14 September 2006, Singapore. Conference Proceedings page 5-6.

3. N. Xiang, H. F. Liu, J. Kong, C. C. Chan, D. Y. Tang, M. Pessa, “Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells”, The 14^th International Conference on Molecular Beam Epitaxy (MBE 2006), 3-8 September 2006, Tokyo. Conference Proceedings page 242.

4. H. F. Liu, N. Xiang, H. L. Zhou, S. J. Chua, and S. Y. Chow, “ Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy”, The 14^th International Conference on Molecular Beam Epitaxy (MBE 2006), 3-8 September 2006, Tokyo. Conference Proceedings page 202.

5. H. F. Liu, H. H. Wan, Q. Y. Toh, N. Xiang, and S. J. Chua, “Growth of InAs on micro- and nano-scale patterned GaAs (001) substrates by molecular beam epitaxy” The 14^th International Conference on Molecular Beam Epitaxy (MBE 2006), 3-8 September 2006, Tokyo. Conference Proceedings page 194.

6. N. Xiang, H. F. Liu, J. Kong, V. Dixit and D. Y. Tang, “Dilute nitride semiconductor saturable absorber mirror for modelocking Nd:Gd_0.64Y_0.36VO₄ solid state laser”, 33^rd International Symposium on Compound Semiconductors, August 13-17, 2006, Vancouver, Canada. Conference Proceedings page 205-206.

7. H. F. Liu, D. Vivek, and N. Xiang, “Interdiffusion and rearrangement of local nitrogen bonding configurations in GaInNAs / GaAs quantum wells grown by molecular beam epitaxy”, accepted as an oral presentation at The 3^rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), 16-19 October, 2005.

8. N. Xiang, F. Lin, H. F. Liu, and S. J. Chua, “GaN-based semiconductor saturable absorber mirror operating at 415 nm”, 3^rd International Conference on Materials for Advanced Technologies (ICMAT 2005), 3-8 July 2005, Singapore.

9. H. F. Liu, N. Xiang, “ Influence of GaNAs Strain Compensation Layers upon Annealing of GaIn(N)As / GaAs Quantum Wells”, 3^rd International Conference on Materials for Advanced Technologies (ICMAT 2005), 3-8 July 2005, Singapore.

10. H. F. Liu, N. Xiang, W. L. Lim, S. Tripathy, S. J. Chua, “ Effect of Rapid Thermal Annealing on the Properties of GaNAs Thin Films Grown by Molecular Beam Epitaxy”, 3^rd International Conference on Materials for Advanced Technologies (ICMAT 2005), 3-8 July 2005, Singapore.

11. H. F. Liu,  N. Xiang, S. Tripathy, and S. J. Chua, “Temperature dependence of Raman spectrum of GaNAs ternary alloys grown by MBE”, 13th International Congress on Thin Films / 8th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ICTF 13/ACSIN 8), 19- 23 June 2005, Stockholm, Sweden

12. S. Tripathy, L.S. Wang, and S.J. Chua, Characterization of GaN epitaxial films grown on silicon-on-insulator substrates, E-MRS 2005 (European Materials Research Society meeting), Strasbourg, FRANCE, May 31- June 3, 2005.

13. A.P. Vajpeyi , S.J. Chua S. S. Banerjee and Tripathy, Raman study of implantation damage recovery from er-implanted GaN and AlGaN, E-MRS 2005 (European Materials Research Society meeting), Strasbourg, FRANCE, May 31- June 3, 2005.

14. L. S. Wang, B. Z. Wang, S. Tripathy and S. J Chua, GaN on nanopatterned GaN/Si(111) templates: optical and structural characterization, E-MRS 2005 (European Materials Research Society meeting), Strasbourg, FRANCE, May 31- June 3, 2005.

15. AP Vaipeyi, S. Tripathy, SJ Chua and J Arokiaraj, Comparative study of optical properties of nanoporous GaN prepared by UV-assisted electrochemical and electroless etching, 207^th Electrochemical Society Meeting, Quebec, Canada, May , 2005

16. S. Tripathy, A. Vajpeyi, S.J. Chua and J. Arokiaraj, "Comparative Study of Optical Properties of Nanoporous GaN Prepared by UV-Assisted Electrochemical and Electroless Etching", in session "Processes at the Compound-Semiconductor/Solution Interface", of the 207th Meeting of The Electrochemical Society.  ,Quebec City Convention Center, Quebec City, Canada, May 15 to May 20, 2005.

17. A. Vajpeyi, SJ Chua and S. Tripathy, Photoluminescence and Micro-Raman Scattering in Porous Si_1-xGe_x Nanostructures. Symposium M: Photonic Materials and Devices. 3^rd international conference on Materials for Advanced Technologies (ICMAT), 3 – 8 July 2005, Singapore.

18. Phosphorus vacancy induced quantum well intermixing and its application in DBR laser using SiO₂ grating, CWAB3 – p 29 -31, IQEC-CLEO-PR 2005, July 11-15, Tokyo, Japan