Patents Granted

1. Ho CS, Karunasiri RPG, Chua SJ, Pey KL and KH Lee, A CMOS gate architecture for integration of salicide

    process in sub-0.1 m m devices, US Patent No 6,010,954, Date Granted Jan 4, 2000.

2. Karunasiri RPG and Chua SJ, Dual band infrared detector using step multi-quantum wells with superlattice

    barriers, Singapore Patent No 68636, (21 March 2000)

    Patents Filing

1. Chua SJ and Teng JH, Multi-wavelength semiconductor lasers Monolithically Integrated with Couplers

    and Isolators – Two wavelength laser monolithically integrated with a Y-branch and an isolator,

    Patent filing in Singapore on 2 May 2000.

2. Wang ZJ and Chua SJ, A buried hetero-structure InP-based opto-electronic device with native oxidized

    current blocking layer, Patent filing in Singapore on 5 January 1998 (9800153-0)

3. Zhang X and Chua SJ, Crystal Growth method for Group-III Nitride and related compound semiconductors,

    Patent filing in Singapore on 5 January 1998 (9801054-9)

4. Zhang X and Chua SJ, Method of fabricating group III Nitride-based semiconductor device,

    Patent filing in Singapore on 6 March 1998 (9803670-0)

5. Li G and Chua SJ, Method of selective post-growth tuning of an optical bandgap of a semiconductor

    hetero-structure and products produced thereof, Patent filing in Singapore on 16 Nov 98 (9804027-2)

 

      Publications (April 2000 and March 2001)

1.  Y.H. Chee and G. Karunasiri, "Circuit Model for Quantum Well Infrared Photodetectors and its Comparison               

with Experiments ", Physica E, 7, 135-138 April-2000.

2.  Cha, C L, E F Chor, H Gong, and L Chan "Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown," Journal of Materials Science Letters, Vol.19, No.9, pp.817-821, May-2000.

3.  Cha, C L, Q Ngo, E F Chor, A K See and T J Lee "Photoresist patterning and ion implantation degrdation effects on

flash memory device yield," Electrochemical and Solid-State Letters, Vol.3, No.7, pp.340-342, July-2000.

4.  Cha, C L, E F Chor, H Gong, A Q Zhang and L Chan "Plasma etching optimisation of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices," IEEE Transaction on Semiconductor Manufacturing, Vol.13, No.3, pp.386-389, August-2000.

5.  K.M.Latt, K.Lee, Y.K.Lee, W.J.Yoo, , "Study of Electroplated Copper Film and Its Interfacial Reactions in the

EPCu/IMPTaN/SiO2/Si Multilayer Structure" J. Materials Science Letters , 20, pp559-562, September-2001

6.  Sun YJ, Tan LS and Chua SJ, "Activation of beryllium-implanted GaN by two-step annealing" MRS INTERNET J N S R 5:U270-U275 Suppl. 1, May-2000

7.  Li P, Chua SJ, Hao M, "The formation of In-rich regions at the perphery of the inverted hexagonal pits of InGaN

thin-films grown by metalorganic vapor phase epitaxy". MRS INTERNET J N S R 5: U580-U585 Suppl., 1May 2000

8.  Li ZF, Lu W, Ye HJ, "Optical spectroscopy study on carrier concentration and mobility in GaN". ACTA PHYS SIN-CH ED 49: (8) 1614-1619 AUG 2000

9.  H. W. Choi, S. J. Chua, A Ramam, J. S. Pan and A T S Wee, "Plasma-induced damage to n-type GaN",

Appl. Phys Letts, Vol. 77, No. 12, pp. 1795-1797, September-2000

10.  J. H. Teng, S. J. Chua, Z. H. Zhang, H. Y. Hong, G. Li, and Z. J. Wang, "Dual wavelength laser source monolithically

integrated with isolator and Y-junction coupler", IEEE Photonics Tech Letts, Vol. 12. No. 10, pp. 1310 – 1312, October-2000.

11.  J. H. Teng, S. J. Chua, H. Y. Hong, Z. H. Zhang, G. Li, A. S. Helmy, and J. H. Marsh, "Multi-wavelength laser fabricated by a Al interlayer controlled quantum well intermixing technology", J. Appl. Phys., Vol.88, No.6. pp 3458-3462, September-2000.

12.  K. Remashan, S. J. Chua, A. Ramam, S. Prakash and W. Liu, "Inductively coupled plasma etching of GaN using BCl₃/Cl₂ Chemistry and Photoluminescence Studies of the Etched Samples", Semicond. Sci. Technol. Vol 15, pp. 386 – 389, April-2000

13.  K. L. Heng, S. J. Chua and P. Wu,"Prediction of Semiconductor Material Properties by Properties of their Constituent

Chemical Elements", Chemistry of Materials, Vol. 12, No. 6, pp. 1648 –1653, June-2000.

14.  W. S. Li, Z. X. Shen, Z. C. Feng and S. J. Chua, " Temperature dependence of Raman scattering in hexagonal gallium nitride films", Journal of Appl. Phys., Vol. 87, No. 7, pp 3332 –3337, April-2000

15.  L. S. Tan, S. Prakash, K. M. Ng, A. Ramam, S. J. Chua, A. T. S. Wee and S. L. Lim, "Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing", Semicond. Sci. Technol. 15, pp 585 –588, June-2000

16.  B. Z. Wang, S. J. Chua, Z. J. Wang and S. Y. Liu, "Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (001)InP substrate by MOCVD", Physica E 8, pp. 290-295, September-2000

17.  Y. T. Hou, Z. C. Feng, J. Chen, X. Zhang, S. J. Chua and J. Y. Lin, "Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrate", Solid St. Comm. 115, pp. 45 –49, May-2000

1. Cha C L, V Vassillev, E F Chor, and Alex See, "Improved PECVD pre-metal oxide liner deposition process with low residue charge non-uniformity in film to avoid excessive PID," Proceedings, 22-25-May-2000 , 5^th International Symposium on Plasma Process-Induced Damage, pp.38-41.

2. Ong S Y, E F Chor, Y K Leung, J Lee W S Li, A See and L Chan, "Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication," ISMA 2000 Proceedings of SPIE Vol. 4228, pp.270-278. November-2000

3. Ong S Y, E F Chor, J Lee, Y K Lee, A See and L Chan, "Impact of indium and boron interaction on short channel and reverse chort channel effects for nMOSFETs," 199^th Meeting of the Electrochemical Society , Symposium on ULSI Process Integration, pp.305-312., March-2001

4. X. H. Zhang, S. J. Chua and J. R. Dong, "Highly Efficient Luminescence in Partially Ordered GaInP₂", 25^th International Conference on the Physics of Semiconductors, ICPS25, Osaka Japan, Sept 17 –22, 2000

5. K L Ke, S. J. Chua and W. J. Fan, "Theoretical Design of Low Threshold Current Density of InAlGaAs Material System", Optical Interconnects for Telecommunication and Data Communications, 8-10 Nov 2000, Beijing, China. Proceedings of SPIE, Vol 4225, pp 386-391.

6. J. H. Teng, S. J. Chua, W. Liu, X. H. Zhang, J. Dong, G. LI, "Improved carrier transport in intermixed AlGaAs/GaAs laser structure with multiquantum well cladding", Vol. 618, Proceedings of MRS Spring meeting, US, April-2000.

7. S. J. Chua, M. Hao, P. Li, J Zhang, W. Wang, W. Liu, "Triggering the formation of In rich quantum dots in InGaN/GaN single quantum well using In as antisurfactants", MRS Fall Meeting, G 11.60, Nov 27 – Dec 1-2000, Boston, USA.

8. J. H. Teng, S. J. Chua, Z. H. Zhang, Y. H. Huang, G. Li, Z. J. Wang, "Dual wavelength laser source monolithically integrated with Y-junction coupler and isolator using quantum well intermixing", MRS Fall Meeting, G 11.60, Nov 27 – Dec 1-2000, Boston, USA.

9. S. F. Lim, W Wang, E. Guenther and S. J. Chua, "Degradation kinetics of simply encapsulated organic light-emitting devices due to black spots", The International Union of Materials Research Societies, City University Hong Kong , 23-26 July 2000

10. F. R. Zhu, K. R. Zhang, B. L. Low, S. F. Lim and S. J. Chua, "Morphological and electrical properties of indium tin oxide films prepared at low processing temperature for flexible organic light emitting devices", The International Union of Materials Research Societies, City University Hong Kong , 23-26 July 2000

11. J. H. Teng, S. J. Chua, W. Liu, X. C. Wang, "Vacancy diffusion in AlGaAs/GaAs laser structure with superlattice cladding layer", International Workshop on Advances in Semiconductor Material and Technology, Singapore . p 152, July-2000.

12. F. Zhu, K. Zhang, B.L. Low, S. F. Lim and S. J. Chua, "Morphological and electrical properties of indium tin oxide films prepared at low processing temperature for flexible organic light emitting devices", The International Union of MRS, 6^th International Conference, D 3.5, Hong Kong, 23 –26 July 2000.

13. L. Bin, W. L. Yu, J. Pei, Y. H. Lai, S. J. Chua, W. Huang, Y. H. Niu and Y. Cao, "Novel Fluorene-Thiophene-Based Conjugated Copolymers and Application in Polymer Light-Emitting Diodes", The International Union of MRS, 6^th International Conference, D 9.2, Hong Kong, 23 –26 July 2000.

14. Z. C. Feng, J. L. Chen, X. Zhang, S. J. Chua and J. Lin,"Optical and structural features of GaN films grown on Si by metalorganic Chemical vapour deposition", F. 2.5, The International Union of MRS, 6^th International Conference, d 9.2, Hong Kong, 23 –26 July 2000

15. W. Liu, W. Wang, P. Li, S. J. Chua and Z. C. Feng , Photoluminescence from high-quality InGaN Multiple Quantum Wells Grown by Metal Organic Chemical Vapor Deposition", International Work Shop on Nitrides , September-2000, Japan.

16. S. J. Wang, C. K. Ong, S. Y. Xu, P. Chen, J. W. Chai, W. C. Tjiu, J. S. Pan, ACH Huan, W. Feng, J. S. Lim, W. J. Yoo and W. K. Choi, International Symposium On The Science Of Surfaces And Nanostructures, November 22-24, Singapore 2000, "RHEED and XPS studies of the decomposition of silicon dioxide by the bombardment of metal ions"

17. K.W.Kok, W.J.Yoo, K.Sooriakumar, P.John, R.Chong, D. Chir, 2^nd Intl Conference on American Vacuum Society on Microelectronics and Interfaces, Feb 5-9, 2001, "A Trench and Release Etching Technique using In-situ Sidewall Passivation of High Aspect Ratio Beams for MEMS"

18. D. Chong, W. J. Yoo, T. C. Ang, S. Y. Loong, R. Cha, P. H. Lee, N. Layadi, L. Chan, and A. See, Proc. 6^th Int Conf on Plasma-Process Induced Damage, 13^th-15^th May, 2001, Monterey, USA

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