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Patents, Publications List for 1999-2000

Patents applied (Jan 1999 and Dec 1999)

1. Crystal Growth Method for Group III Nitride and Related compound semiconductors - ZHANG Xiong and CHUA Soo Jin

2. Method of Fabricating Group-III Nitride-based Semiconductor Device- ZHANG Xiong and CHUA Soo Jin

3. Multi-wavelength semiconductor lasers Monolithically Integrated with Couplers and Isolators – CHUA Soo Jin and TENG Jing Hua

Publications (Jan 1999 and Dec 1999)

 

1. Zhang X, Chua SJ, Feng ZC. MOCVD growth and characterization of GaN films with composite intermediate layer buffer on Si substrate. Physica Status Solidi A 176: (1) 605-609 Nov 16 1999

2. Zhang X, Chua SJ, Li P, Chong KB and Feng ZC. Enhanced optical emission from GaN films grown on a silicon substrate. Appl. Phys. Letts. 74: (14) 1984-1986 Apr 5 1999

3. W Liu, Li MF, Feng ZC, Chua SJ, Akutsu N and Matsumoto K, " Material properties of GaN grown by MOCVD", Surf Interface Anal 28: (1) 150-154 Aug 1999

4. Kachwalla Z, Wiggins JW, Chua SJ and Wang W. The influence of Pt in a Ti-Al-Pt-Au ohmic contact on n-type GaN. Physica Status Solidi A 176: (1) 779-782 Nov 16 1999

5. Osipowicz T, Chiam SY, Watt F, Li G and Chua SJ. Channeling contrast microscopy of GaN and InGaN thin films. Nucl Instrum Meth B 158: (1-4) 653-657 Sep 1999

6. Hou YT, Feng ZC, Chua SJ, MF Li. Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire Appl. Phys. Letts. 75: (20) 3117-3119 Nov 15 1999

7. Feng ZC, Hou YT, Chua SJ and Li MF. Infrared reflectance studies of GaN epitaxial films on sapphire substrate. Surf Interface Anal 28: (1) 166-169 Aug 1999

8. Z.C. Feng, S.J. Chua, K. Tone and J.H. Zhao, "Recrystallization of C-Al Ion Co-implanted Epitaxial 6H-SiC", Appl. Phys. Letts. 75, 472-474 (1999).

9. T.R. Yang and C.C. Lu, W.C. Chou, Z.C. Feng and S. J. Chua, "Infrared and Raman Spectroscopic Study of ZnMnSe Materials Grown by Molecular Beam Epitaxy", Phys. Rev. B 60, 16058-16064 (1999).

10. X. Zhang, S.J. Chua, W. Liu, and P. Li, "Enhanced blue-light emission from InGaN/GaN quantum wells grown over multilayered buffer on silicon substrate by metal organic chemical vapor deposition", Physica Status Solidi (b) 216, 307-310 (1999).

11. Z.C. Feng, Y.T. Hou, M.F. Li, S.J. Chua, W. Wang, and L. Zhu, "Infrared reflectance investigation of un-doped and Si-doped GaN films on sapphire", Physica Status Solidi (b) 216, 577-580 (1999).

12. Z.J. Wang, S.J. Chua, F. Zhou, X.J. Wang, W. Wang and R.H. Wu, "Native-oxidized InAlAs blocking layer buried hetero-structure InGaAsP/InP MQW laser for high temperature operation", IEEE Photonics Technology Letters 11, 3-5 (1999).

13. Y.T. Hou, Z.C. Feng, M.F. Li and S.J. Chua, "Characterization of MBE Grown Ga_1-xAl_xAs Alloy Films by Raman Scattering", Surface & Interface Analysis 28, 163-165 (1999).

14. A.S.W. Lee, E.H. Li, and G. Karunasiri, "Vacancy-enhanced Intermixing in Highly Strained InGaAs/GaAs Multiple Quantum Well Photodetector", Journal of Appl. Phys., 86, 3402-3407 (1999).

15. MVS Ramakrishna, G. Karunasiri, N. Pavel, U. Sridhar, and W. J. Zeng, "A Highly Sensitive Infrared Temperature Sensor using Self-heating Compensated Microbolometers", Sensors & Actuators A, 79, 122-127 (2000).

16. Y.H. Chee and G. Karunasiri, "Circuit Model for Quantum Well Infrared Photodetectors and its Comparison with Experiments ", Physica E, 7, 135-138 (2000).

17. Li WS, Shen ZX, Feng ZC and Chua SJ., Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K. Surf Interface Anal 28: (1) 173-176 Aug 1999

18. Li ZF, Lu W, Ye HJ, Chen ZH, Li G and Chua SJ. Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy. J Appl Phys 86: (5) 2691-2695 Sep 1 1999

19. Li G, Chua SJ, Teng JH, Wang W. Feng ZC, Huang YH and Osipowicz T. Blueshift of In0.2Ga0.8N/GaN single quantum well band gap energy by rapid thermal annealing. J Vac Sci Technol B 17: (4) 1507-1509 Jul-Aug 1999

20. Li G, Chua SJ, Wang W. The Hall mobility and its relationship to the persistent photoconductivity of undoped GaN. Solid State Commun 111: (11) 659-663 1999

21. Liu W, Li MF, Chua SJ, Akutsu N and Matsumoto K. Photoreflectance study on the surface states of n-type GaN. Semicond Sci Tech 14: (5) 399-402 May 1999

22. Li G, Chua SJ, Xu SJ, Beaumont B and Gilbart P. Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN. Appl. Phys. Letts 74: (19) 2821-2823 May 10 1999

23. Chtchekine DG, Gilliland GD, Feng ZC, Chua SJ, Wolford DJ, Ralph SE, Schurman MJ and Fregurson I. Temperature dependence of bound exciton emissions in GaN. MRS Internet J N S R 4: U740-U745 Suppl. 1 1999

24. Liu W, Li MF, Chua SJ, Akutsu N and Matsumoto K. Photoreflectance study of Au-Schottky contacts on n-GaN. J Electron Mater 28: (4) 360-363 Apr 1999

25. Wang XC, Xu SJ, Chua SJ, Li G, Zhang XH, Zhang ZH Chong KB and Zhang X. Strong influence of SiO2 thin film on properties of GaN epilayers. Appl. Phys. Letts 74: (6) 818-820 Feb 8 1999

26. Fleischer K, Toth M, Phillips MR, Li G and Chua SJ. Depth profiling of GaN by cathodoluminescence microanalysis. Appl. Phys. Letts. 74: (8) 1114-1116 Feb 22 1999

27. Gibart, Beaumont B and Chua SJ, Spatially resolved photoluminescence of laterally overgrown GaN, J. Crystal Growth 201/202, 365-370, 1999

28. Chetchekine DG, Feng ZC, Gilliland GD, Chua SJ and Wolford D, Donor-hydrogen bound exciton in epitaxial GaN, Phy Rev, B, Vol 60, No 23, 15980-15984, 1999

29. RVVVJ Rao, TC Chong, LS Tan, WS Lau and NN Lim, Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and AlGaAs metal-insulator-semiconductor diodes, International Journal of Electronics, 1039-1050, 1999.

30. Li P, Chua SJ, Li G, Wang Wand Guo YP, Study of Phase separated InGaN Grown by Metal-organic Vapour Phase Epitaxy, Phy. Stat. Sol Vol 216, No 145, 145-149, 1999.

31. Li P, Chua SJ, Li G, Wang Wand Guo YP, Study of Phase separated InGaN Grown by Metal-organic Vapour Phase Epitaxy, Phy. Stat. Sol Vol 216, No 145, 145-149, 1999.

32. Cha, C L, E F Chor, H Gong, A J Bourdillon, Y M Jia, J Pan, A Q Zhang and L Chan, "Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation," Applied Physics Letters, Vol. 75, No.3, pp.355-357, 1999.

33. Cha, C L, E F Chor, Y M Jia, A J Bourdillon, H Gong, J Pan, A Q Zhang, S K Tang and C B Boothroyd "Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitors," Journal of Materials Science Letters, Vo.18, No. 17, pp.1427-1431, 1999.

34. Cha, C L, KC Lee, E F Chor, H Gong, K Prasad, A J Bourdillon, A See, L Chan and M M O Lee, "Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoid," Applied Physics Letters, Vol. 75, No.26, pp.4192-4194, 1999.

35. Chor E F, D Zhang Dan, H Gong, W K Chong and S Y Ong, "Electrical characterisation, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au) based ohmic contacts, Journal of Applied Physics, Vol.87, No.5, pp.2437-2444, 2000.

36. Cha, C L, E F Chor, H Gong, and L Chan "Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown," Journal of Materials Science Letters, Vo.19, No.9, pp.817-821, 2000.

37. Wang W, Chua SJ, Li G. "The Hall mobility and its relationship with persistent photoconductivity of undoped GaN". Journal of Electron Mater 29: (1) 27-30 JAN 2000

38. MVS Ramakrishna, G. Karunasiri, N. Pavel, U. Sridhar, and W. J. Zeng, "A Highly Sensitive Infrared Temperature Sensor using Self-heating Compensated Microbolometers", Sensors & Actuators A, 79, 122-127 February-2000

39. W. K Choi, J. H. Chen,. L. K. Bera, W.Feng, K. L. Pey, J. Mi. C. Y. Yang, A. Ramam, S. J. Chua, J. S. Pan, A. T. S. Wee and R. Liu. "Structural Characterisation of Rapid Thermal Oxidised Si_1-x-yGe_xC_y Alloy Films Grown by Rapid Thermal Chemical Vapour Deposition", J. Appl. Phys., Vol 87, No 1, pp 192 –197, January-2000

40. Z. J. Wang, S. J. Chua, Z. Y. Zhang, F. Zhou, J. Y. Zhang, X. J. Wang and W. Wang, "Self-aligned current aperture in native oxidized AlInAs buried herterostructure InGaAsP/InP distributed feedback laser", Appl. Phys. Letts., Vol. 76, No. 12, pp. 1492- 1494, March-2000

41. F. Zhu, K. Zhang, E. Guenther and S. J. Chua, "Optimised indium-tin-oxide contact for organic light emitting diode applications" Thin Solid Films, vol. 363, pp 314-317, March-2000.

42. Chor E F, D Zhang Dan, H Gong, W K Chong and S Y Ong, "Electrical characterisation, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au) based ohmic contacts", Journal of Applied Physics, Vol.87, No.5, pp.2437-2444, March-2000.

43. S.J. Wang, C.K.Ong, S.Y.Xu, P.Chen, W.C. Tjiu, ACH Huan, W.J. Yoo, J.S. Lim, W. Feng, W.K. Choi, "Crystalline Zirconia Oxide on Silicon as Alternative Gate Dielectrics" Appl. Phys. Lett. 78 ,1604, March-2001.

44. S.J. Wang, C.K.Ong, S.Y.Xu, P.Chen, W.C. Tjiu, ACH Huan, W.J. Yoo, J.S. Lim, W. Feng, W.K. Choi, "Electrical Properties of Crystalline YSZ Films on Silicon on Alternative Gate Dielectrics" Semiconductor Science and Technology 16,No.3, L13-L16,March-2001

45. J. H. Teng, S. J. Chua, G. Li, A. S. Helmy, and J. H. Marsh, "Control of bandgap tuning in quantum well intermixing by a buried Ge layer", Appl. Phys Letts, Vol. 76, No. 12, pp. 1582-1584, March-2000.

Conference Publications

1. X Zhang, S J Chua, P Li and K B Chong, "Enhanced optical emission from GaN films grown on composite intermediate layers", MRS 1999 Spring Meeting, 1999 San Francisco

2. Z. C. Feng, W. Liu, Y. P. He, S. J. Chua, and M. F. Li, " Photoluminescence characteristic of InGaN alloys with low indium compositions", ICSCRM’99,10-15 Oct 1999, NC.USA

3. X. Zhang, S. J. Chua, W. Liu, P. Li, "Photoluminescence of InGaN/GaN multiple quantum wells grown on a Si-(001) substrate", MRS Fall Meeting 99, November 29-December 3, 1999, Boston, USA

4. D.G. Chtchekine, G.D. Gilliland, Z.C. Feng, S.J. Chua, D. Wolford, S.E. Ralph, M. Schurman and I. Ferguson, "Temperature dependence of bound exciton emissions in GaN", in MRS J. Nitride Semicond. Res. 4S1, G6.47 (1999) and GaN and Related Alloys, Mat. Res. Soc. Symp. Proc. Vol. 537, edited by S.J. Pearton, C. Kuo, T. Uenoyama, A.F. Wright, MRS, Pittsburgh (1999).

5. L.P. Lee and S.J. Chua, "Analysis and design of AlGaInP single-quantum-well LED", in "Design, Fabrication, and Characterization of Photonics Devices", ed. M. Osiñski, S.J. Chua and S.F. Chichibu, Proc. SPIE, Vol. 3896, p.155-162 (1999).

6. J.H. Teng, S.J. Chua, Y.H. Huang, Z.H. Zhang, G. Li, A.S. Helmy and J.H. Marsh, "Multi-wavelength lasers fabricated by a novel impurity-free quantum well intermixing technology, in "Design, Fabrication, and Characterization of Photonics Devices", ed. M. Osiñski, S.J. Chua and S.F. Chichibu, Proc. SPIE, Vol. 3896, p.191-198 (1999).

7. H.K. Khoo and S.J. Chua, "Theoretical comparison of 0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum-well lasers emitting at 1.55 ?m", in "Design, Fabrication, and Characterization of Photonics Devices", ed. M. Osiñski, S.J. Chua and S.F. Chichibu, Proc. SPIE, Vol. 3896, p.741-750 (1999).

8. J.L. Chen, Z.C. Feng, X. Zhang, S.J. Chua and J. Lin, "Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition", in Photonics Technology into the 21^st Century: Semiconductors, Microstructures, and Nanostructures, ed. S.T. Ho, Y. Zhou, W.W. Chow and Y. Arakawa, Proc. SPIE, Vol. 3899, p. 54-62 (1999).

9. P. Li, S.J. Chua, Z.C. Feng, W.Wang, M.S. Hao, T. Sugahara and S. Sakai, "Luminescence, morphology and X-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor deposition", Proc. SPIE, V.3899, p.63-72 (1999).

10. K. Li, Y.T. Hou, Z.C. Feng, S.J. Chua and M.F. Li, "Comparative investigation of high resolution transmission electron microscopy and Fourier transform infrared spectroscopy for GaN films on sapphire substrate", Proc. SPIE, V.3899, p.84-91 (1999).

11. H.W.Choi and S.J. Chua, "Flicker Noise Characterization of Plasma-Induced Damaged Gallium Nitride", Proc. of 5th International Semiconductor Device Research Symposium, Charlottesville, USA, p. 363-365 (1999).

12. J.H. Teng, S. J. Chua, G. Li, A. Saher. Helmy, and J. H. Marsh, "Band gap tuning by a Ge interlayer in quantum well intermixing", in IEEE Syposium on High Performance Electron Devices for Microwave & Optoelectronic Applications, Proceedings of IEEE EDMO'99, edit by Ali A Rezazadeh, p.194-197. London (1999).

13. X. Zhang, S.J. Chua, W. Liu, and P. Li, " High-quality InGaN/GaN MQW Grown over Composite Intermediate Layer on Silicion-(001) substartes". 1999 International Conference on Solid State Devices and Materials (SSDM’99), Sept. 1999, Tokyo, Japan.

14. G.Li, S.J.Chua, W. Wang, P. Li, "Strong Electro-luminescence from In_0.2Ga_0.8N/GaN MQW" 9^th Biennial Workshop on OMVPE conference, Florida, May, 1999, USA.

15. P. Li, S. J. Chua, G. Li, W. Wang, X. C. Wang, " Temperature-dependent and power-dependent photoluminescence study of phase-separated InGaN thin films grown by MOCVD". 1^st East Asian Conference on Lightwave system, Lasers & Optoelectronics (LiLSO 99), March 1999, Malaysia.

16. P. Li, S. J. Chua, G. Li and W. Wang, "Effect of V/III Molar Ratio on the Optical and Electrical Properties of GaN grown by MOCVD", Proceedings of The 9th MINDEF-NUS Joint Seminar, Jan.13 1999, NUS, Singapore.

17. X. Zhang, S.J. Chua, P. Li, and K.B. Chong, "Enhanced Optical Emission from GaN Films Grown on a Silicon Substrate", Proceedings of The 9th MINDEF-NUS Joint Seminar, 13 Jan.13 1999, NUS, Singapore.

18. X. H. Zhang and S. J. Chua, "First-principles study of oxygen impurities and nitrogen vacancies in AlN, GaN, and InN", in proceedings of Applications of High Performance Computing, 16-26 (1999).

19. P. Li, S. J. Chua, et al., "Study of phase-separated thin layers of InGaN grown by metalorganic-vapor-phase-epitaxy", MRS Fall Meeting 99, November 29-December 3, 1999, Boston, USA

20. Prakash S, L S Tan, K M Ng, A Raman, S J chua and A T S Wee, Ohmic contacts formation on Si-doped GaN epilayers by low temperature annealing(Abstract). In Proceeding ICSCRM'99, 10-15 October 1999, Sheraton Imperial Centre, NC, United States, pp. 48-49, 1999

21. RVVVJ Rao, TC Chong, LS Tan, WS Lau and JJ Liou, Modelling of LT-GaAs and LT-GaAlAs MISFET devices, In Proceeding of the 1999 European Gallium Arsenide and Related III-V Compounds Applications Symposium (GAAS 99), 4-5 October 1999, Munich, Germany, pp214-218, 1999

22. RVVVJ Rao, TC Chong, LS Tan, WS Lau and S Alphones, Change of g(f) in LT-GaAs and LT-GaAlAs MISFETs with thermal stress, In Proceeding of the 1999 European Gallium Arsenide and Related III-V Compounds Applications Symposium (GAAS 99), 4-5 October 1999, Munich, Germany, pp292-295, 1999.

23. RVVVJ Rao, TC Chong, LS Tan, WS Lau and JJ Liou, Low temperature grown GaAs and AlGaAs MISFETs – Charecterization and model development, In Proceeding of the 7^th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronics Applications (EDMO), 22-23 November 1999, London, United Kingdom, pp43-52, 1999.

24. RVVVJ Rao, TC Chong, LS Tan, WS Lau and JJ Liou, A physical analytical model of LT-GaAs and LT-GaAlAs MISFET devices, In Proceeding of the 1999 IEEE Hong Kong Electron Devices Meeting, 26 June 1999, The Chinese University of Hong Kong, Hong Kong, pp134-136, Hong Kong: IEEE, 1999.

25. Yuejun Sun, Leng Seow Tan, Soo Jin Chua, "Activation of Be-implanted GaN by two-steps annealing", MRS Fall Meeting 99

26. RVVVJ Rao, TC Chong, LS Tan and WS Lau, Effect of LT-layer thickness on the performance of LT-GaAs and LT-GaAlAs MISFETs, In Proceeding of the 1999 Asia Pacific Microwave Conference, 30 November-3 December 1999, Raffels City Convention Centre, Singapore, pp60-63, Singapore: IEEE, 1999.

27. Cheah, C W , R P G Karunasiri and L S Tan, Mechanism of intersubband transition in n-type III-V quantum well superlattice and improvement on absorption for TE polarized field. November-3 December 1999, Hynes Convention Centre, Boston, Massachusetts, United State, pp 707-708. MRS Fall Meeting 1999

28. Tan L S, S H Koh, S Prakash, W K Choi and Z Zhang, Determination of minority carrier diffusion lengths in the denuded zone of silicon wafers by surface photovoltage measurements. In Proceeding of the Tenth International Workshop on the Physics of Semiconductor Devices, 14-18 December 1999, Indian Institute of Technology, New Delhi, India, edited by V Kumar and S K Agarwal, pp908-911, Delhi: Allied Publishing Ltd, 1999.

29. M. W. Ng, Y. H. Chee, and G. Karunasiri " On-Chip Tunable Dark Current Compensation for Focal Plane Arrays ", MINDEF-NUS Joint R & D Seminar, March 14, (2000).

30. L. Zhou, Y. H. Chee, and G. Karunasiri "Fabrication of 5 ?m InGaAs/AlGaAs Quantum Well Infrared Detector ", MINDEF-NUS Joint R & D Seminar, March 14, (2000).

31. Cha, C L, E F Chor, H Gong, A Q Zhang, Z Dong and L Chan, "Evaluation of rapid thermal nitrided ONO dielectric resistance to plasma process induced damage," Proceedings 1999 4^th International Symposium on Plasma Process-Induced Damage, pp.49-52.

32. Chong P F, B J Cho, E F Chor, M S Joo and I S Yeo, "Integrity of gate oxides irradiated under electron-beam lithography conditions," Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials, pp.182-183.

33. Chor E F, and D Zhang, "Studying Pd-based ohmic contacts to GaN," Proceedings 1999 75.200International Semiconductor Device Research Symposium, pp.347-350.