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Patents, Publications List for 1997-1998

  1. Antoszewski, J, J M Dell, L Faraone, L S Tan, A Ramam, S J Chua, D S Holmes, J R Lindemuth and J R Meyer, Evaluation of III-V multilayer transport parameters using quantitative mobility spectrum analysis. Materials Science and Engineering, part B, 44, no. 1-3 (1997): 65-69. (The Netherlands).

  2. Bastola, N, S J Chua and S J Xu, Blue shift of effective band gap in n-i-p-i doping superlattices as a function of optical excitation intensity. Journal of Applied Physics, 83, no. 3 (15 January 1998): 1476-1480.

  3. Chor, E F and C J Peng, Heterojunction bipolar transistor with an additional minority carrier reflection barrier in the emitter. Japanese Journal of Applied Physics, Part I, 36, no. 11 (November 1997): 6694-6698. (Japan).

  4. Chua, S J, X H Tang and S J Xu, Temperature quenching of tunable tunneling recombination emission in AlxG1-xAs n-i-p-i doping structures. Solid State Communications, 102, no.10 (June 1997): 739-742. (United Kingdom).

  5. Chua, S J, X H Zhang, S J Xu and X Gu, First-principles calculations of band offsets of AlxGa1-xP- GaP (001) heterostructures. J. Phys Condens Matter, 9 (July 1997): L279-L283.

  6. Gan, L M, B Liu, C H Chew, S J Xu, S J Chua, G L Loy, G Q Xu, LM Gan, B Liu, CH Chew and S J Chua, Enhanced photoluminescence and characterization of Mn-doped ZnS nanocrystallites synthesized in microemulsion. Langmuir : The ACS Journal of Surfaces and Colloids, 13, 24 (26 November 1997): 6427-6431. (United States).

  7. Koh, K A and S J Chua, Electromigration in Aluminum/Silicon/Copper Metallization due to the presence of a thin oxide layer. Journal of Electronic Materials, 26, no. 9 (August 1997): 1070-1075. (United States).

  8. Lau, W S, E F Chor, S P Kek, W H Abdul Aziz, H C Lim, C H Heng and R Zhao, The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective eithing of Al0.3Ga0.7As over GaAs. Japanese Journal of Applied Physics, Part I, 36, no. 6A (June 1997): 3370-3374. (Japan).

  9. Liu, W, M F Li, S J Chua, Y H Zhang and K Uchida, GaN exciton photovoltatic spectra at room temperature. Applied Physics Letters, 71, no. 17 (27 October 1997): 2511-2513.

  10. Mei, T, R P G Karunasiri and S J Chua, Two-color infrared detection using intersubband transitions in multiple step quantum wells with superlattice barriers. Applied Physics Letters, 71, no. 14 (6 October 1997): 2017-2019. (United States).

  11. Phua, C C, T C Chong, W S Lau, R Zhao, D Lu and C H Goo, L S Tan, Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates. Japanese Journal of Applied Physics, 1, 36, 3B (30 March 1997): 1888-1899. (Special on Solid State Devices and Materials). (Japan).

  12. Ramam, A and S J Chua, Luminescence anomaly in bandgap tailored In0.53(GaxAl1-x) 0.47As quaternary alloy grown by molecular beam epitaxy. Journal of Crystal Growth, 175 (1997): 1294-1298. (United States).

  13. Rao, R V V V J, T C Chong, W S Lau, L S Tan and N N Lim, Characteristics of GaAs MISFET devices using low-temperature grown Al0.3Ga0.7As as gate insulator. Electronics Letters, 33, no. 14 (3 July 1997): 1258-1260. (United Kingdom).

  14. Sanjeev, S, P R Vaya, S J Chua, Y Shen, John D'Connor and V B King, Growth of compressive strained InGaAs/GaAs multiple quantum well structures by MBE. Indian Journal of Pure & Applied Physics, 35 (July 1997): 448-451.

  15. Teo, K L, M F Li, C H Goo, W S Lau and Y T Lim, New electron and hole traps in GaAsP alloy. International Journal of Electronics, 83, no.1 (1997): 29-35. (United Kingdom).

  16. Xu, S J, S J Chua, X Zhang and Z H Zhang, Optical characterisation of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates. IEEE Journal of Selected Topics in Quantum Electronics, 3, no. 2 (April 1997): 471-474. (United States).

  17. Yeo, Y C, M F Li, T C Chong and P Y Yu, Theoretical study of the energy-band structure of partially CuPt-ordered Ga0.5In0.5P. Physical Review B. Condensed Matter, 55, no. 24 (15 June 1997): 16414-16419. (United States).

  18. Yeo, Y C, T C Chong, M F Li, Electronic band structures and effective-mass parameters of Wurtzite GaN and InN. Journal of Applied Physics, 83, (1998):1429.

  19. Yeo, Y C, T C Chong, M F Li and W J Fan, Electronic band structures and optical gain spectra of strained wurtzite GaN-AlXGa1-X quantum-well lasers. IEEE Journal of Quantum Electronics, 34, no. 3 (March 1998). (United States).

  20. Zhang, X H, S J Chua, S J Xu and W J Fan, First-principles calculation of GaAs1-xPx - Al 0.3Ga 0.7As (001) band offsets. Journal of Physics : Condensed Matter, 10, 3 (26 January 1998): 577-580.

  21. Zhang, X, S J Chua, S J Xu and K B Chong, Optical property of a novel (111)-oriented quantum structure. Applied Physics Letters, 71, no. 13 (29 September 1997): 1840-1842.

  22. Zhang, X, S J Chua, W Liu and K B Chong, Photoreflectance study of Si-doped GaN grown by metal-organic chemical vapor deposition. Applied Physics Letters, 72 (13 April 1998). (United States).

 CONFERENCE PAPERS

  1. Cha, C L, E F Chor, H Gong, A Q Zhang and L Chan, Breakdown of reoxidized nitrided oxide (ono) in flash memory devices upon current stressing. In Proceedings Hong Kong Electron Devices Meeting (HKEDM'97), 30 August 1997, City University of Hong Kong, Clearwater Bay, Kowloon, Hong Kong, edited by IEEE, compiled by IEEE, pp. 82-85. 1997/08/30, 30 August 1997.

  2. Cha, C L, E F Chor, H Gong, A Q Zhang, L Chan and J Xie, Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in flash memory devices. In Proceedings of SPIE, Microelectronic Device Technology, 1-2 October 1997, Austin/Texas, United States, pp. 368-375. Proceedings of SPIE, Microelectronic Device Technology, Vol. 3212. Austin, 1 October 1997.

  3. Cha, C L, E F Chor, H Gong, A Q Zhang, L Chan and J Xie, Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devices. In Proceedings 7th International Symposium on IC Technology, Systems and Applications, 10-12 September 1997, Hyatt Regency Hotel, Singapore, Singapore, pp. 356-359. Singapore, 10 September 1997.

  4. Chatrath, V, S J Chua, R P G Karunasiri and Y Mao, Dependence of the composition of InAs1-xSbx on the mole fraction of In in the melt using LPE. In 7th International Symposium on IC Technology Systems and Applications, edited by Prof YC Tong, pp. 379-381. Singapore, September 1997. (Paper presented at ISIC'97, 7th International Symposium on IC Technology, Systems and Applications, 10-12 September 1997, Singapore).

  5. Chong, T C, Y C Yeo, M F Li and W J Fan, Analysis of optical gain of strained wurtzite InxGa1-xN/GaN quantum well lasers. In MRS Symposium Proceedings, Vol. 482, Nitride Semiconductor, edited by F A Pone, S P DenBaars, B K Meyer, S Nakamura, S Strite. United States: Materials Research Society, April 1998. (Paper presented at Materials Research Society 1997 Fall Meeting, 1-5 December 1997, Boston, Massachusetts, United States).

  6. Chong, W K, E F Chor, C H Heng and S J Chua, (Pd, Ti, Au)-based ohmic contacts to p- and n-doped In0.53Ga0.47As. Paper presented at 1997 International Symposium on Compound Semiconductors (ISCS '97), 7-11 September 1997, Hotel Del Coronado, San Diego, California, United States.

  7. Chua, S J, S J Xu, C H Wang, W J Fan, J Jiang and X G Xie, Self-organised growth and characterisation of InAs, InGaAs and InAlAs quantum dots. pp. 11-17. India: Narosa Publishing House, December 1997. (Paper presented at 9th International Workshop on Physics of Semiconductor Devices, 16-20 December 1997, New Delhi, India).

  8. Du, A Y, M F Li and T C Chong, Dislocations and traps in MBE grown lattice mismatched p-InGaAs layers on GaAs substrate. In MRS - Fall Meeting, Symposia D. United States: MRS - USA, 1997. (Paper presented at MRS-Fall Meeting, 1-5 December 1997, Boston, United States). (Accepted for publication).

  9. Ho, C S, K L Pey, H Wong, R P G Karunasiri, S J Chua, K H Lee, Y Tang, S M Wong and L H Chan, Effect of argon or nitrogen pre-amorphized implant on salicide formation for deep sub-micron CMOS technology. Vol. 3183, Microlithographic Techniques in IC Fabrication, pp. 243-254. United States: SPIE, 23 June 1997.

  10. Jiang, J, J X Zhou, Z Zhong and S J Chua, Atom diffusion during MBE growth on patterned substrates. In The Second International Conference on Low Dimensional Structures & Devices, edited by Mohamed Henini, pp. 1-96, May 1997. (Paper presented at LDSD '97, The Second International Conference on Low Dimensional Structures & Devices, 19-21 May 1997, Lisbon, Portugal).

  11. Khoo, H K, S J Chua and R P G Karunasiri, Tensile strained InGaAs/AlGaInAs MQW laser emitting at 1.55 ?m. In 7th International Symposium on IC Technology Systems and Applications. Singapore, September 1997. (Paper presented at ISIC'97, 7th International Symposium on IC Technology, Systems and Applications, 10-12 September 1997, Singapore).

  12. Li, M F, A Y Du and T C Chong, Selected topics in defect studies in optoelectronics semiconductor materials. In Proceeding of International Symposium on Laser and Nonlinear Opticals Materials, edited by Takatomo Sasaki, pp. 245-252. Oxford Graphic Printers Pte Ltd, 1997. (Paper presented at International Symposium on Laser and Nonlinear Optical Materials, 3-5 November 1997, Singapore).

  13. Liu, W, K L Teo, M F Li and S J Chua, The study of piezoelectric effect in wurtzite GaN/InGaN quantum wells/AlGaN multilayer structures. In Proceedings ICNS 97, pp. 1-22. Tokushima, October 1997. (Paper presented at The Second International Conference on Nitride Semiconductors - ICNS 97, 27-31 October 1997, Tokushima, Japan).

  14. Liu, W, M F Li, S J Chua, Y H Zhang and K Uchida, GaN room temperature exciton spectra by photo voltain measurement. In MRS - Fall Meeting '97, Symposium D. United States: MRS - USA, 1997. (Paper presented at MRS - Fall Meeting, 1-5 December 1997, Boston, United States).

  15. Ng, CH, R P G Karunasiri, S J Chua, FH Gu and LH Chen, The effect of hydrogen on the Schottky barrier height and electrical properties of TiSi 2/Si(100) by furnace annealing. In 1997 International Semiconductor Device Research Symposium, 10-13 December 1997, Charlottesville, Virginia, United States, pp. 59-62. Virginia, December 1997.

  16. Saith, S and S J Chua, Photoluminescence studies of nitrogren doped gallium phroshide grown by liquid phase epitaxy. In 7th International Symposium on IC Technology, Systems and Applications, pp. 382-385. Singapore, September 1997. (Paper presented at ISIC'97, 7th International Symposium on IC Technology, Systems and Applications, 10-12 September 1997, Singapore).

  17. Tan, L S, C W Cheah, R P G Karunasiri and A Ramam, Design and analysis of a double barrier quantum well infrared photodector. In Physics of Semiconductor Devices, Vol. 2, edited by Vikram Kumar and S K Agarwal, Physics of Semiconductor Devices, edited by Vikram Kumar and S K Agarwal, pp. 840-843. New Delhi: Narosa Publishing House, 1998. (Paper presented at Ninth International Workshop on Physics of Semiconductor Devices, 16-20 December 1997, Jamia Millia Islamia, New Delhi, India).

  18. Tan, L S, M S Leong, K L Ong, S C Choo, C L Hartford and R G Mazur, Characterization of ultra-shallow doping profiles in silicon by the spreading resistance technique. In Proceedings of SEMICON 98 Technical Symposium, 5-7 May 1998, Singapore International Convention & Exhibition Centre, Singapore. Singapore: Semiconductor Equipment and Materials International (Accepted for publication).

  19. Yeo, Y C, M F Li, T C Chong and P Y Yu, Theoretical study of the energy band structure of partially CuPt-ordered Ga0.5In0.5P. Paper presented at The 4th International Conference on Computational Physics, 2-4 June 1997, The Hyatt Regency Hotel, Singapore.

  20. Yeo, Y C, T C Chong and M F Li, Valence band parameters for wurtzite GaN and InN. In MRS Symposium Proceedings, Vol. 482, Nitride Semiconductors, edited by F A Ponce, S P DenBaars, B K Meyer, S Nakamura, S Strite. United States: Materials Research Society, April 1998. (Paper presented at Materials Research Society 1997 Fall Meeting, 1-5 December 1997, Boston, Massachusetts, United States).

  21. Zhang, X, S J Chua, W Liu and K B Chong, Photoreflectance study of band-gap renormalization in Si-doped GaN. In Proceedings ICNS 97, pp. 190-190. Tokushima, October 1997. (Paper presented at The Second International Conference on NITRIDE Semiconductors, ICNS '97, 27-31 October 1997, Tokushima, Japan).

 PAPERS FOR SEMINAR, PUBLIC TALK AND LECTURE

  1. Chen, Geng, R P G Karunasiri and S J Chua, Fabrication of Ti microbolometer infrared sensors using CMOS technology. In International MEMS Workshop, 15-16 December 1997, National University of Singapore, Singapore, pp. 24-25. Singapore, December 1997.

  2. Chong, W K, E F Chor, C H Heng and S J Chua, (Pd, Ti, Au) - based ohmic contacts to p- and n-type In0.53Ga0.47As. In Proceedings 1997 DTG Electronics Technology Seminar (DETS '97), pp. 36-41. Singapore, November 1997. (Paper presented at DTG Electronics Technology Seminar '97 (DETS '97), 13 November 1997, DSO National Laboratories, Singapore).

  3. Chua, S J, Compound semiconductor epitaxy - from 3 to 0 dimensional quantum structures. Singapore, 1997. (Paper presented at Professorial Lectures for Technology Month 97, 27 September 1997, NUS, LT6, Singapore).

  4. Heng, C H, E F Chor and S J Chua, AlGaAs/GaAs heterojunction bipolar transistor (HBT) for power applications. In Proceedings 1997 DTG Electronics Technology Seminar (DETS '97), pp. 41-45. Singapore, November 1997. (Paper presented at DTG Electronics Technology Seminar '97 (DETS '97), 13 November 1997, DSO National Laboratories, Singapore).

  5. Heng, C H, E F Chor and S J Chua, Heterojunction bipolar transistors (HBTs) for high power applications. In MINDEF-NUS Joint R&D Seminar, 31-31 January 1997, National University of Singapore, LT7, Singapore, pp. 109-115. Singapore, 30 January 1997.

  6. Lee, K M, J T L Thong and E F Chor, Electron beam lithography of sub-micron T-gate structure on HEMTs. In Proceedings 1997 DTG Electronics Technology Seminar (DETS '97), pp. 112-116. Singapore, November 1997. (Paper presented at DTG Electronics Technology Seminar '97 (DETS '97), 13 November 1997, DSO National Laboratories, Singapore).

  7. Zeng, W J, R P G Karunasiri, S J Chua, U Sridhar and P D Foo, Fabrication of microbolometer infrared focal plane array. In MINDEF-NUS Joint R&D Seminar, 31 January 1997, National University of Singapore, LT7, Singapore, pp. 148-152. Singapore, 1997.

 CHAPTERS IN BOOKS

  1. Zhang, X, Crystal growth and optical properties of (111)-oriented strained-layer quantum wells. In Strained-Layer Quantum Wells and Applications, edited by M O Manasreh, pp.209-252. Amsterdam: Gordon and Breach, 1997.


 

  
 

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