The Centre for Optoelectronics (COE) conducts research in the materials growth of III-V compound semiconductors (III-arsenides, III-phosphides, III-nitrides) by Metal Organic Chemical Vapour Deposition (MOCVD) and Molecular Beam Epitaxy (MBE), characterisation of semiconductor materials (optical, electronic and microstructural studies), fabrication and characterisation of Optoelectronics devices (semiconductor lasers and LEDs, quantum well and quantum dot photodetectors and optical waveguides), as well as the development of microelectronic unit processes (metalisation, reactive ion etching, inductively coupled plasma etching, rapid thermal processing, oxidation) and the simulation of Optoelectronics fundamental processes.